碳纳米管的热导率:从弹道到扩散输运

采用非平衡分子动力学方法研究了300 K和1000 K时（5,5）碳纳米管热导率随长度的变化.在室温下,碳纳米管长度小于40 nm时热导率与长度呈线性关系,此时导热处于弹道输运阶段,单位面积弹道热导为5.88×10⁹ Wm^-2K^-1．随着碳纳米管长度的增加,其热导率逐渐增加,但增加速度随长度逐渐减小,此时导热处于弹道—扩散输运阶段,并随长度的增加从以弹道输运为主向以扩散输运为主转变．长度大于10 μm时由于弹道输运可以忽略,导热近似达到完全 关键词： 碳纳米管 热导率 弹道输运 低维导热     

Interaction-induced magnetoresistance: from the diffusive to the ballistic regime

We study interaction-induced quantum correction deltasigma(alphabeta) to the conductivity tensor of electrons in two dimensions for arbitrary Ttau, where T is the temperature and tau the transport mean free time. A general formula is derived, expressing deltasigma(alphabeta) in terms of classical propagators ("ballistic diffusons"). The formalism is used to calculate the interaction contribution to the magnetoresistance in a classically strong transverse field and smooth disorder in the whole range of temperatures from the diffusive (Ttau<1) to the ballistic (Ttau greater, similar 1) regime.     

Ballistic–diffusive phonon transport and size induced anisotropy of thermal conductivity of silicon nanofilms

The effective thermal conductivity of nanofilms is size dependent due to the diffusive–ballistic transport of phonons. In this paper, we investigate the cross-plane phonon transport from the viewpoint of the phonon Boltzmann equation. A predictive model for the size dependent thermal conductivity is proposed and agrees well with the results of molecular dynamics simulation for silicon nanofilms. The ballistic transport has different effects on the heat conduction in the in-plane or cross-plane directions, which causes the anisotropy of thermal conductivity of nanofilms. Such anisotropy is also size dependent and vanishes with the increase of film thickness.     

Ballistic transport and quantum interference in InSb nanowire devices

An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in In Sb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Pérot patterns which confirm the ballistic nature of charge transport.Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of In Sb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations.     

Collective diffusion in carbon nanotubes: Crossover between one dimension and three dimensions

Using non-equilibrium molecular dynamics and Monte Carlo methods, we study the collective diffusion of helium in carbon nanotubes. The results show that the collective diffusion coefficient(CDC) increases with the dimension of the channel. The collective diffusion coefficient has a linear relationship with the temperature and the concentration. There exist a ballistic transport in short carbon nanotubes and a diffusive transport in long carbon nanotubes. Fick's law has an invalid region in the nanoscale channel.     

弹道输运与高温超导电性

本文在引入了弹道输运的概念后,对高温超导体正常态下电阻率和霍耳效应的各向异性以及它们奇异的温度特性统一地进行了解释;对温差电势率的各向异性及其温度行为进行了讨论;也分析了高温超导体由正常态向超导态转变的过程,并给出了超导转变温度与材料一些物理参数的关系.     

Transition from diffusive to ballistic dynamics for a class of finite quantum models

The transport of excitation probabilities amongst weakly coupled subunits is investigated for a class of finite quantum systems. It is demonstrated that the dynamical behavior of the transported quantity depends on the considered length scale; e.g., the introduced distinction between diffusive and ballistic transport appears to be a scale-dependent concept, especially since a transition from diffusive to ballistic behavior is found in the limit of small as well as in the limit of large length scales. All these results are derived by an application of the time-convolutionless projection operator technique and are verified by the numerical solution of the full time-dependent Schr?dinger equation which is obtained by exact diagonalization for a range of model parameters.     

Reduction of phonon mean free path: From low-temperature physics to room temperature applications in thermoelectricity

It has been proposed for a long time now that the reduction of the thermal conductivity by reducing the phonon mean free path is one of the best way to improve the current performance of thermoelectrics. By measuring the thermal conductance and thermal conductivity of nanowires and thin films, we show different ways of increasing the phonon scattering from low-temperature up to room-temperature experiments. It is shown that playing with the geometry (constriction, periodic structures, nano-inclusions), from the ballistic to the diffusive limit, the phonon thermal transport can be severely altered in single crystalline semiconducting structures; the phonon mean free path is in consequence reduced. The diverse implications on thermoelectric properties will be eventually discussed.     

电子双势垒量子隧穿的散射矩阵方法及其数值模拟

采用散射矩阵的方法研究了电子在由两个方势垒组成的双势垒结构中的隧穿特性.将电子在双势垒中的隧穿过程分为相干输运和非相干输运两部分来研究,相干输运导致了隧穿透射系数随中间层厚度变化产生量子振荡,而非相干输运导致了振荡振幅的衰减.双势垒总的透射系数与势垒高度、入射和出射波矢的匹配性有关,数值计算的结果证实了相关结论.     

有限长双壁碳纳米管的电子输运性质

基于Landauer公式，研究了有限长的非公度和公度双壁碳纳米管的电子输运性顾，结果表明 ，双壁管的几何结构对其电子输运性质有显著的影响：非公度的双壁碳管的电导随能量的不 同，既可以是弹道型的，也可以是非弹道型的；由armchair管组成的公度的双壁碳管的电导 随能量变化呈现快速的电导振荡，并且此快速振荡叠加在背景慢振荡上，而zigzag管组成的 公度双壁管的电导随能量变化只有快速振荡、没有规则的慢振荡背景. 关键词： 碳纳米管 电子输运性质     

Gate Tunable Supercurrent in Josephson Junctions Based on Bi_2Te_3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi_2Te_3 topological insulator(TI) thin films contacted by superconducting Nb electrodes.For a device with junction length L=134 nm,the critical supercurrent I_c can be modulated by an electrical gate which tunes the carrier type and density of the TI film.I_c can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state.In the p-type regime the Josephson current can be well described by a short ballistic junction model.In the n-type regime the junction is ballistic at 0.7 K T 3.8 K while for T 0.7 K the diffusive bulk modes emerge and contribute a larger I_c than the ballistic model.We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions.Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.     

Electron-electron interaction in the magnetoresistance of graphene

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field-dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of magnetoresistivity and the theory of electron-electron interaction in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to electron-electron interaction from 7 to 3 due to intervalley scattering. In addition, we find a temperature-independent ballistic contribution to the magnetoresistivity in classically strong magnetic fields.     

Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization

We show that four-terminal measurements of the differential conductance of field effect transistors (FETs) can provide important insights into the transport mechanism, and in particular can reveal the presence of ballistic transport. Measurements and simulations of purposely fabricated AlGaAs–GaAs heterostructure FETs show that ballistic transport results in a pronounced peak in the derivative of the differential conductance versus the gate voltage, which splits into two peaks with increasing drain-to-source voltage. Analyzing the four-probe conductance, ballistic electron transport through the channel is revealed as the origin of the observed peak splitting.     

Quantum thermal transport from classical molecular dynamics

Using a generalized Langevin equation of motion, quantum thermal transport is obtained from classical molecular dynamics. This is possible because the heat baths are represented by random noises obeying quantum Bose-Einstein statistics. The numerical method gives asymptotically exact results in both the low-temperature ballistic transport regime and the high-temperature strongly nonlinear classical regime. The method is a quasiclassical approximation to the quantum transport problem. A one-dimensional quartic on-site model is used to demonstrate the crossover from ballistic to diffusive thermal transport.     

On ballistic transport in carbon nanotubes

We investigate theoretically the ballistic regime exhibited by conduction electrons in multiwalled carbon nanotubes in relation to the conductance quantization in these tubes. Starting from the fact that electron drift mobility is quantized in multiwall tubes, essential aspects related to both ballistic and diffusive regimes are discussed.     

Statistical properties of wave transport through surface-disordered waveguides

We review some general statistical properties of wave transport through surface disordered waveguides. These systems are shown to present both striking similarities and differences with respect to quasi-one-dimensional waveguides with volume disorder. The statistical properties are analysed using extensive numerical calculations and random matrix theory results. The transport properties are characterized by the statistical behaviour of different transport coefficients that can be defined for both classical (light, microwaves, sound, etc.) and quantum (electrons) waves. In analogy with bulk-disordered systems, the behaviour of the waveguide conductance/resistance (defined for both classical and quantum waves) as a function of the system length defines three different transport regimes: ballistic, diffusive and localization. However, the coupling between waveguide modes presents significant differences with respect to the coupling induced by volume defects. For any incoming mode, there is a strong preference for the forward propagation through the lowest mode. For narrow waveguides, the statistics of reflection coefficients (reflected speckle pattern) present strong finite-size effects which can be surprisingly well described by random matrix theory. Special attention is paid to the fundamental problem of the transition between different regimes. The long-standing problems of the phase randomization process between ballistic and diffusive regimes and the evolution of the conductance statistical distribution in the transition from diffusion (Gaussian statistics) to localization (log normal statistics) are also discussed.     

Mesoscopic SNS junctions and their application to SQUIDs and millimeter-wave detectors

Mesoscopic SNS junctions have been studied both in the ballistic and diffusive regimes. SNS junctions in the ballistic regime behave as an ideal Fermion oscillator which is to be compared with the Boson oscillator or the Planck theory of blackbody radiation. The current of mesoscopic SNS junctions in the diffusive regime has the same phase dependence as that of dirty-limit short weak links derived by a transport equation. Recent theories of mesoscopic SNS junctions have successfully unified the theories of the tunnel Josephson junction, the clean-limit short weak link and the dirty-limit short weak link which look very different conceptionally. We can even observe transitions among the three types of junctions when we change the transmission coefficients of the barriers between the superconducting electrodes experimentally. We looked experimentally for the optimum transmission coefficient which gives the minimum low-frequency telegraph noise in order to make a low-noise SQUID magnetometor for brain science. We have observed signals of 5 fT from human brains with a good signal-to-noise ratio using the SQUID magnetometor of the SNS junctions. The 64-channel SQUID magnetometer of SNS junctions has confirmed that mesoscopic SNS junctions are important not only theoretically but also practically. These data could encourage people studying SNS junctions of high-T_c superconductors.     

Suppression of Josephson currents in ballistic junctions by an injection current

Control of the critical current in a superconductor/two-dimensional electron gas Josephson junction by means of an injection current is reported. The control mechanism is explained by a theoretical model, which takes ballistic transport across the junction and diffusive transport through the semiconductor wire structure into account. Measurements on a Nb-AlGaSb/InAs-Nb junction show that the strong suppression of the critical current can, in principle, be explained by the theoretical model. Deviations are due to the nonlinear current–voltage characteristics of the superconductor/two-dimensional electron gas interface and the two-dimensionality of the supercurrent transport.     

Statistical properties of wave transport through surface-disordered waveguides

We review some general statistical properties of wave transport through surface disordered waveguides. These systems are shown to present both striking similarities and differences with respect to quasi-one-dimensional waveguides with volume disorder. The statistical properties are analysed using extensive numerical calculations and random matrix theory results. The transport properties are characterized by the statistical behaviour of different transport coefficients that can be defined for both classical (light, microwaves, sound, etc.) and quantum (electrons) waves. In analogy with bulk-disordered systems, the behaviour of the waveguide conductance/resistance (defined for both classical and quantum waves) as a function of the system length defines three different transport regimes: ballistic, diffusive and localization. However, the coupling between waveguide modes presents significant differences with respect to the coupling induced by volume defects. For any incoming mode, there is a strong preference for the forward propagation through the lowest mode. For narrow waveguides, the statistics of reflection coefficients (reflected speckle pattern) present strong finite-size effects which can be surprisingly well described by random matrix theory. Special attention is paid to the fundamental problem of the transition between different regimes. The long-standing problems of the phase randomization process between ballistic and diffusive regimes and the evolution of the conductance statistical distribution in the transition from diffusion (Gaussian statistics) to localization (log normal statistics) are also discussed.     

Ballistic transport in semiconductor nanostructures: From quasi-classical oscillations to novel THz-emitters

By suitable design it is possible to achieve quasi-ballistic transport in semiconductor nanostructures over times up to the ps-range. Monte-Carlo simulations reveal that under these conditions phase-coherent real-space oscillations of an electron ensemble, generated by fs-pulses become possible in wide potential wells. Using a two-color pump-and-probe technique we have been able to observe this new phenomenon in excellent agreement with the theoretical predictions. Apart from its fundamental significance, ballistic transport in nanostructures can also be used for high-efficiency coherent THz-sources. The concept of these THz-emitters and its experimental confirmation will also be presented.