自旋陈数理论和时间反演对称破缺的量子自旋霍尔效应

一般认为,量子自旋霍尔效应只有受到时间反演对称性的保护才是稳定的。但是,因为在 实际材料中破坏时间反演对称性的微扰往往无法避免,这种受时间反演对称性保护的量子自旋霍 尔效应在真实环境中并不稳定。本综述将介绍近期在寻找无需时间反演对称性保护的量子自旋霍 尔效应方向上的系列研究进展。我们将证明量子自旋霍尔体系的非平庸拓扑性质在时间反演对称 性被破坏后仍然可以完好存在,并通过一个规范讨论,将边缘态一般性质和体能带的非平庸拓扑 性质联系起来。进一步,将探讨通过人工消除边缘态时间反演对称性而实现稳定的量子自旋霍尔 效应的方案。此外,我们还将介绍自旋陈数理论,自旋陈数是在没有时间反演对称性存在时,表 征量子自旋霍尔体系所处不同拓扑相的有效工具。     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

二维电介质光子晶体中量子自旋与谷霍尔效应共存的研究

基于量子自旋霍尔或谷霍尔效应的拓扑光子结构具有对缺陷免疫和抑制背向散射的特性,对设计新型低损耗的光子器件起到了关键作用.本文巧妙设计了一种具有时间反演对称性的二维电介质光子晶体,实现了量子自旋霍尔效应和量子谷霍尔效应的共存.首先基于蜂巢结构排布的硅柱经过收缩扩张,打开了布里渊区Γ点的四重简并点形成拓扑平庸或非平庸的光子带隙,实现量子自旋霍尔效应.经过扩张后的蜂巢晶格演化成为Kagome结构,之后在Kagome晶格中加入正负扰动,打破光子晶体的空间反演对称性,导致布里渊区的非等价谷K和K′的简并点打开并出现完整带隙,实现了量子谷霍尔效应.数值计算结果表明,由拓扑平庸与非平庸、正扰动与负扰动的光子晶体组成的界面上可实现单向传输且对弯曲免疫的拓扑边缘态.最后,设计了基于两种效应共存的四通道系统,此系统为光学编码与稳健信号传输提供潜在方法,为电磁波的操纵提供了更大的灵活性.     

Rashba自旋轨道耦合下square-octagon晶格的拓扑相变

本文研究了各向同性square-octagon晶格在内禀自旋轨道耦合、Rashba自旋轨道耦合和交换场作用下的拓扑相变,同时引入陈数和自旋陈数对系统进行拓扑分类.系统在自旋轨道耦合和交换场的影响下会出现许多拓扑非平庸态,包括时间反演对称破缺的量子自旋霍尔态和量子反常霍尔态.特别的是,在时间反演对称破缺的量子自旋霍尔效应中,无能隙螺旋边缘态依然能够完好存在.调节交换场或者填充因子的大小会导致系统发生从时间反演对称破缺的量子自旋霍尔态到自旋过滤的量子反常霍尔态的拓扑相变.边缘态能谱和自旋谱的性质与陈数和自旋陈数的拓扑刻画完全一致.这些研究成果为自旋量子操控提供了一个有趣的途径.     

磁性拓扑绝缘体与量子反常霍尔效应

量子反常霍尔绝缘体,有时也被称为陈数绝缘体,是不同于普通绝缘体和拓扑绝缘体的一类新的二维绝缘体,该体系具有可被实验观测的特殊物理性质—量子反常霍尔效应。该体系的物态不能用朗道对称性破缺理论来描写,而要用到拓扑物态的概念。它的发现也经历了从反常霍尔效应的内秉物性阐释,到量子自旋霍尔效应与拓扑绝缘体的发现,再到磁性拓扑绝缘体的理论预测与实现,并最终成功实验观测的漫长过程。由于量子反常霍尔效应的实现不需要外加磁场,而此时样品的边缘态可以被看成一根无能耗的理想导线,因此人们对于其将来可能的应用充满了期待。本文将从理论的角度简单综述该领域的发展历程、基本概念、以及相关的材料系统。     

缀饰格子中时间反演对称破缺的量子自旋霍尔效应

<正>研究了缀饰格子中的量子自旋霍尔效应,模型中同时考虑了Rashba自旋轨道耦合和交换场的作用.缀饰格子具有简立方对称性,以零能平带和单狄拉克锥结构为主要特点.在缀饰格子中,不论是实现量子自旋霍尔效应还是量子反常霍尔效应,都需要一个不为零的内禀自旋轨道耦合作用来打开一个完全的体能隙,这与石墨烯等六角格子模型有着很大的不同.在交换场破坏了时间反演对称性的情况下,以自旋陈数为标志的量子自旋霍尔效应仍然能够存在,边缘态和极化率的相关结果也证明了这一结论.结果表明自旋陈数比z2拓扑数在表征量子自旋霍尔效应方面有着更广泛的适用范围,相应的结论为利用磁场控制量子自旋霍尔效应提出了一个理论模型和依据.     

二维介电光子晶体中的赝自旋态与拓扑相变

基于背散射抑制且对缺陷免疫的传输性质,光子拓扑绝缘体为电磁传输调控提供了一种新颖的思路.类比电子体系中的量子自旋霍尔效应,本文设计出一种简单的二维介电光子晶体,以实现自旋依赖的光子拓扑边界态.该光子晶体是正三角环形硅柱子在空气中排列而成的蜂窝结构.将硅柱子绕各自中心旋转60°,可实现二重简并的偶极子态和四极子态之间的能带翻转.这两对二重简并态的平均能流密度围绕原胞中心的手性可充当赝自旋自由度,其点群对称性可用来构建赝时间反演对称.根据k·p微扰理论,给出了布里渊区中心附近的有效哈密顿量以及对应的自旋陈数,由此证实能带翻转的实质是拓扑相变.数值计算结果揭示,在拓扑非平庸和平庸的光子晶体分界面上可实现单向传输且对弯曲、空穴等缺陷免疫的拓扑边界态.本文中的光子晶体只由电介质材料组成并且晶格结构简单,实现拓扑相变时无需改变柱子的填充率或位置,只需转动一个角度.因此,这种结构在拓扑边界态的应用中更为有效.     

单层二维量子自旋霍尔绝缘体1T'-WTe2研究进展

量子自旋霍尔效应通常存在于二维拓扑绝缘体中,其具有受拓扑保护的无耗散螺旋边界态. 2014年,理论预言单层1T’相过渡金属硫族化合物是一类新型的二维量子自旋霍尔绝缘体.其中,以单层1T’-WTe₂为代表的材料体系具有原子结构稳定、体带隙显著、拓扑性质易于调控等许多独特的优势,对低功耗自旋电子器件的发展具有重要的意义.本文总结了单层1T’-WTe₂在实验上的最新进展,包括基于分子束外延生长的材料制备,螺旋边界态的探测及其对磁场的响应,掺杂、应力等手段在单层1T’-WTe₂中诱导出的新奇量子物态等.也对单层1T’-WTe₂未来可能的应用前景进行了展望.     

空间盘绕型声学超材料的亚波长拓扑谷自旋态

声子晶体的Dirac线性色散关系,使其具有奇特的声拓扑特性,在声波控制领域具有良好的应用前景.目前,声子晶体的拓扑边缘态主要基于Bragg散射所产生的能带结构,难以实现低频声波的受拓扑保护单向边缘传输.本文引入空间盘绕结构,设计了具有C_(3v)对称性的空间盘绕型声学超材料,并研究其布里渊区高对称点(K/K'点)的亚波长Dirac锥形线性色散.接着,通过旋转打破空间盘绕型声学超材料的镜像对称性,使其Dirac简并锥裂开而产生亚波长拓扑相变和亚波长拓扑谷自旋态.最后,采用拓扑相位互逆的声学超材料构造拓扑界面,实现声拓扑谷自旋传输.空间盘绕型声学超材料的亚波长Dirac线性色散与亚波长拓扑谷自旋态突破了声子拓扑绝缘体的几何尺寸限制,为声拓扑稳健传输在低频段的应用提供理论基础.     

三维量子Hall效应电阻平台与能隙

量子Hall效应最先在强磁场中的二维电子气体中产生，是一种内部绝缘、边缘单向导电、电阻为零的拓扑绝缘态，电阻平台的出现及纵向电阻的消失是量子Hall效应产生的标志。对于三维电子气体，z方向的自由度会破坏体系内部绝缘，阻碍量子Hall效应产生。解决问题的方法是让z方向磁场引诱体系在费米能级处产生能隙，从而保障内部绝缘。三维量子Hall效应是研究量子相变很好的平台，z方向磁场引发两种相变：在xy平面引发拓扑相变，在z方向引发体系由金属态向绝缘态的朗道相变。三维量子Hall效应最近在ZrTe5、HfTe5材料中观察到，与二维整数量子Hall效应的电阻平台出现在整数处不同，三维量子Hall效应的电阻平台出现在h/e²λ_F,z/2处，其中λ_F,z为电子在磁场z方向的费米波长。本文讨论量子Hall效应电阻平台出现以及纵向电阻消失的原因：朗道能级填满阻止左右边缘态电子的相互散射，保障了体系边缘的单向导电性和零电阻；用规范不变性理论推导三维量子Hall效应电阻平台的理论值，理论值与实验结果符合得很好；从自旋与轨道耦合理论出发，推导磁场在...     

Bulk-edge correspondence in graphene with/without magnetic field: Chiral symmetry,Dirac fermions and edge states

There are two types of edge states in graphene with/without magnetic field. One is a quantum Hall edge state, which is topologically protected against small perturbation. The other is a chiral zero mode that is localized near the boundary with/without magnetic field. The latter is also topological but is guaranteed to be at zero energy by the chiral symmetry, which is also responsible for massless Dirac-like dispersion. Conceptual roles of the edge states are stressed and reviewed from the point of view of the bulk-edge correspondence and topological order.     

Helical quantum states in HgTe quantum dots with inverted band structures

We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.     

Magnetic quantum ring in two-dimensional topological insulators

The quantum properties of topological insulator magnetic quantum rings formed by inhomogeneous magnetic fields are investigated using a series expansion method for the modified Dirac equation. Cycloid-like and snake-like magnetic edge states are respectively found in the bulk gap for the normal and inverted magnetic field profiles. The energy spectra, current densities and classical trajectories of the magnetic edge states are discussed in detail. The bulk band inversion is found to manifest itself through the angular momentum transition in the ground state for the cycloid-like states and the resonance tunneling effect for the snake-like states.     

Enhanced robustness of zero-line modes in graphene via magnetic field

We systematically studied the influence of magnetic field on zero-line modes (ZLMs) in graphene and demonstrated the physical origin of their enhanced robustness by employing nonequilibrium Green’s functions and the Landauer–Büttiker formula. We found that a perpendicular magnetic field can separate the wavefunctions of the counter-propagating kink states into opposite directions. Specifically, the separation vanishes at the charge neutrality point and increases as the Fermi level deviates from the charge neutrality point and can reach a magnitude comparable to the wavefunction spread at a moderate field strength. Such spatial separation of oppositely propagating ZLMs effectively suppresses backscattering and is more significant under zigzag boundary condition than under armchair boundary condition. Moreover, the presence of magnetic field enlarges the bulk gap and suppresses the bound states, thereby further reducing the scattering. These mechanisms effectively increase the mean free paths of the ZLMs to approximately 1 μm in the presence of a disorder.     

Elastic scattering of surface states on three-dimensional topological insulators

Topological insulators as a new type of quantum matter materials are characterized by a full insulating gap in the bulk and gapless edge/surface states protected by the time-reversal symmetry. We propose that the interference patterns caused by the elastic scattering of defects or impurities are dominated by the surface states at the extremal points on the constant energy contour. Within such a formalism, we summarize our recent theoretical investigations on the elastic scattering of topological surface states by various imperfections, including non-magnetic impurities, magnetic impurities, step edges, and various other defects, in comparison with the recent related experiments in typical topological materials such as BiSb alloys, Bi2Te3, and Bi2Se3 crystals.     

Scattering of spin-polarized electron in an Aharonov-Bohm potential

The scattering of spin-polarized electrons in an Aharonov-Bohm vector potential is considered. We solve the Pauli equation in 3 + 1 dimensions taking into account explicitly the interaction between the three-dimensional spin magnetic moment of electron and magnetic field. Expressions for the scattering amplitude and the cross section are obtained for spin-polarized electron scattered off a flux tube of small radius. It is also shown that bound electron states cannot occur in this quantum system. The scattering problem for the model of a flux tube of zero radius in the Born approximation is briefly discussed.     

Effects of electric and magnetic fields on electronic states and transport of a Hall bar

We study the edge-state band and transport property for a HgTe/CdTe quantum well Hall bar under the combined coupling of a transverse electric field and a perpendicular magnetic field. It is demonstrated that a weak magnetic field can protect one of the two edge states, open or enlarge a gap of the other edge state in the Hall bar. However, an appropriate electric field can remove the gap, restoring the quantum spin Hall effect. Using the scattering matrix method, we study the electronic transport of the system. We find that the electric field can not only make the switch from pure spin-up to spin-down current, but also open or close the edge-state channels in a narrow Hall bar under a weak magnetic field, which provides us with a new way to construct a topological insulator-based spin switch and charge switch.     

Quantum spin Hall effect in inverted type-II semiconductors

The quantum spin Hall (QSH) state is a topologically nontrivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells and in this Letter we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. The quantum well exhibits an "inverted" phase similar to HgTe/CdTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking are essential. Remarkably, the topological quantum phase transition between the conventional insulating state and the quantum spin Hall state can be continuously tuned by the gate voltage, enabling quantitative investigation of this novel phase transition.