Analysis of secondary electron emission using the fractal method

Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1 × 10^-7, the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1 × 10^-7,the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then,the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D,the higher the multipactor threshold.     

超短超强激光脉冲辐照超薄碳膜电离状态研究

为了进一步理解极端条件下物质的电离特性, 特别是超短超强激光脉冲辐照超薄靶时等离子体的形成与分布, 本文以超薄碳膜为例, 细致研究了超短超强激光脉冲辐照下原子的离化过程. 分析和比较了强激光场直接作用电离和靶内静电场电离等两种场致电离形式, 在碰撞电离可以忽略的情况下, 发现更多的电离份额是来自靶内静电场的电离方式. 研究了激光脉冲强度对电离的影响, 发现激光脉冲强度越强, 电离速度越快, 产生的高价态离子所占比例也越高.当激光强度为1×10²⁰ W/cm²时, 尽管该强度高于电离生成C⁺⁶所需要的激光强度阈值, 但该激光脉冲并不能将整个靶电离成C⁺⁶离子, 对此本文进行了详细的分析. 在研究激光脉冲宽度的影响时, 发现激光脉宽越小, 电离速度越快, 但越小的激光脉冲电离获得的高价态离子越少.     

铝阳极氧化的多孔结构抑制二次电子发射的研究

针对空间大功率微波部件中的二次电子倍增效应影响微波部件性能的问题,基于铝阳极氧化产生大深宽比、高孔隙率均匀纳米级多孔结构的特性,结合蒸发镀银技术,提出一种有效降低表面二次电子发射系数的方法.结果表明,相比于未阳极氧化的铝样片,在不清洗样片的情况下(实际的样片表面都会存在吸附或沾污),测试得到二次电子发射系数曲线的第一能量交叉点E1从45 eV增加到77 eV,最大二次电子发射系数SEY_(max)从2.68减小到1.52;在清洗样片的情况下(清洗是为了去除吸附或沾污,获得理想的表面),测试得到第一能量交叉点E_1从40 eV增加到211 eV,最大二次电子发射系数SEY_(max)从2.55减小到1.36.为了验证本文所提方法对抑制空间大功率微波部件二次电子倍增效应的有效性,分别将获得的未阳极氧化和阳极氧化后的二次电子发射系数数据用于一个X频段阻抗变换器设计中,结果显示,使用本文所提方法后,阻抗变换器的微放电阈值从7000 W提高到125000 W.本文研究的方法不仅对解决空间大功率微波部件的微放电问题有指导意义,而且对真空电子器件、加速器等领域的研究也具有重要参考价值.     

利用等效电路模型计算耦合腔行波管注-波互作用

通过研究Curnow等效电路模型,得到进行单腔计算的矩阵方程,进而获得线路场方程, 结合运动方程和空间电荷场方程,从而推导出耦合腔行波管一维注波互作用非线性理论模型. 该理论能计算任意的切断、跳变、渐变等结构以及多信号模拟.利用该理论编制的软件计算了 59 GHz-64 GHz耦合腔行波管AM-PM相位失真,三阶互调以及五阶互调分量. 同时模拟得到了59 GHz-64 GHz带内饱和输出功率分布,理论结果与热测结果误差在5%以内.     

磁控溅射铂抑制镀银表面的二次电子发射

降低表面的二次电子产额是抑制微波部件二次电子倍增效应和提升功率阈值的有效途径之一,目前主要采用在表面构造陷阱结构和沉积非金属薄膜的方法降低二次电子产额,其缺点是会改变部件的电性能.针对此问题,采用在表面沉积高功函数且化学惰性的金属薄膜来降低二次电子产额.首先,采用磁控溅射方法在铝合金镀银样片表面沉积100 nm铂,测量结果显示沉积铂后样片的二次电子产额最大值由2.40降至1.77,降幅达26%.其次,用相关唯象模型对二次电子发射特性测量数据进行了拟合,获得了在40-1500 eV能量范围内能够准确描述样片二次电子产额特性的Vaughan模型参数,以及在0-50 eV能量范围内能够很好地拟合二次电子能谱曲线的Chung-Everhart模型参数.最后,将获得的实验数据和相关拟合参数用于Ku频段阻抗变换器的二次电子倍增效应功率阈值仿真研究,结果表明通过沉积铂可将部件的功率阈值由7500 W提升至36000 W,证实了所提方法的有效性.研究结果为金属材料二次电子发射特性的研究提供实验数据参考,对抑制大功率微波部件二次电子倍增效应具有参考价值.     

Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

Reducing the secondary electron yield (SEY) of Ag-plated aluminum alloy is important for high-power microwave components. In this work, Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically. The secondary electron coefficient δ_max of carbon films increases with the Cu contents increasing at first, and then decreases to 1.53 at a high doping ratio of 0.645. From the viewpoint of surface structure, the higher the content of Cu is, the rougher the surface is, since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network. However, from viewpoint of the electronic structure, the reduction of the sp² hybrid bonds will increase the SEY effect as the content of Cu increases, due to the decreasing probability of collision with free electrons. Thus, the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.