Thermal experiment of silicon PIN detector

The experiment of this paper is the thermal test of the leakage current of silicon PIN detector. Raising temperature may cause the detector to increase leakage current, decrease depletion and increase noise. Three samples are used in the experiment. One (called ΔE) is the sample of 100 μm in thickness. The other two (called E₁ and E₂) are stacks of five detectors of 1000 μm in thickness. All of them are 12 mm in diameter. The experiment has been done for 21 hours and with power on continuously. The samples have undergone more than 60℃ for about one hour. They are not degenerated when back to the room temperature. The depletion rate is temperature and bias voltage related. With the circuit of the experiment and temperature at 35℃, ΔE is still depleted while E₁ and E₂ are 94.9% and 99.7% depleted respectively. The noises of the samples can be derived from the values at room temperature and the thermal dependence of the leakage currents. With the addition of the noise of the pre-amplifier, the noises of E₁, E₂ and ΔE at 24℃ are 16.4, 16.3, and 10.5 keV (FWHM) respectively while at 35℃ are about 33.6, 33.1, and 20.6 keV (FWHM) respectively.     

中能电子成像仪探头的设计

利用小孔成像原理对中能电子成像仪探头的机械结构进行了设计,为保证探头单元暴露于外辐射带辐射环境12年的总剂量小于5krad,确定其壳体厚度为约3mm的铜,探头的角分辨率为20°;根据带电粒子在硅中的能量损失规律对探测器进行了防质子污染设计,确定了探测器厚度为1000μm,其屏蔽层厚度为10μm等效硅。最后对设计探头的质子污染率进行了计算,结果表明该中能电子成像仪探头的设计满足外辐射带空间中能电子探测的需求,为中能电子成像仪的研制奠定了基础。