含有1,4,7-三苄基-1,4,7-三氮杂环壬烷的两个双核铜配合物的合成、表征及其与DNA的相互作用

合成了2个含有1,4,7-三苄基-1,4,7-三氮杂环壬烷（Bn₃tacn）的双核铜配合物：[Cu₂（Bn₃tacn）₂（m-bdc）（CH₃CN）₃（H₂O）₂]ClO₄（1）和[Cu₂（Bn₃tacn）₂（OH）₂]（ClO₄）₂（2）。配合物1由间苯二甲酸采取单双齿方式桥连Cu（Ⅱ）离子,配合物2由OH桥连。配合物1和2晶体均属于单斜晶系,分别为P2₁/c空间群和C2/c空间群。分别对2个配合物进行了红外光谱、紫外-可见光谱和元素分析表征。研究了配合物1与DNA的相互作用,对配合物2进行了循环伏安测试。     

Zno纳米粒子在PS中空微反应器中的合成与光学性能

通过种子乳液聚合合成核壳结构的聚甲基丙烯酸甲酯/聚苯乙烯(PMMA/PS)复合微球,通过酸碱溶胀法进一步制备出次微米级的PS中空微球. 将此中空微球作为微反应器,使在ZnO纳米粒子前驱体溶液中溶胀, 最终ZnO纳米粒子在PS中空微球中原位生成. 实验表明, 组成ZnO纳米粒子前驱体溶液的两种组 分(CH₃COO)₂Zn和LiOH的滴加顺序不同对最终生成的ZnO纳米粒子的尺寸和负载效率有很大的影响,但并不改变ZnO纳米粒子的晶型. 复合物的光致发光和UV-Vis吸     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

质子辐照作用下浮栅单元的数据翻转及错误退火

本文利用60 MeV质子束流,开展了NAND (not and) flash存储器的质子辐照实验,获取了浮栅单元的单粒子翻转截面,分析了浮栅单元错误的退火规律,研究了质子辐照对浮栅单元的数据保存能力的影响.实验结果表明,浮栅单元单粒子翻转截面随质子能量的升高而增大,随质子注量的升高而减小.浮栅单元错误随着退火时间的推移持续增多,该效应在低能量质子入射时更为明显.经质子辐照后,浮栅单元的数据保存能力有明显的退化.分析认为高能质子通过与靶原子的核反应,间接电离导致浮栅单元发生单粒子翻转,翻转截面与质子注量的相关性是因为浮栅单元单粒子敏感性的差异.质子引起的非电离损伤会在隧穿氧化层形成部分永久性的缺陷损伤,产生可以泄漏浮栅电子的多辅助陷阱导电通道,导致浮栅单元错误增多及数据保存能力退化.     

新题征展(69)

A 题组新编 1.已知ABCD为空间四边形,分别求下列情况下两对角线AC、BD所成的角:     

试题研讨(13)

题 1　 (2 0 0 3年安徽省春季高考试题 )设α、β为 x2 - x - 1=0的根 ,且α>β,令 cn =αn -βn　 (n∈ N+) .(1)求 c1 ,c2 ,c3 ;(2 )证明 :1α2 n-1 +1α2 n >1c2 n-1 +1c2 n;(3)证明 :∑nk=11ck <α.命题溯源　数列与不等式相结合的题型是高考命题中的一个“热点”,在全国各地的综合测试卷中出现的频率较高 .1998年及2 0 0 2年高考都是以这类题型作为压轴题 ,它能很好的考查学生知识转化为能力的水平层次 .原题思路　 (1)解方程 x2 - x - 1=0得α =1+52 ,　β =1- 52 ,则c1 =α-β=5 ,c2 =α2 -β2 =5 ,c3 =α3 -β3 =2 5 .(2 )易得α+…     

新题征展(29)

A　题组新编1 .三棱锥 P - ABC中 ,PA、PB、PC两两垂直 ,D为底面上任意一点 .( 1 )若 D到三个侧面的距离分别为 4、5、6 ,求 PD;( 2 )若 D到三条侧棱的距离分别为 4、5、6 ,求 PD;( 3)若 PD与 PA、PB所成的角分别为4 5°、6 0°,求 PD与 PC所成的角的大小 .2 .已知关于 x的不等式kx2 - 2 x 6 k <0 .( 1 )若不等式的解集为 {x| 2 相似文献   

BaPbO_3－Nd_2O_3系陶瓷导电性研究

研究了ＢａＰｂＯ３－Ｎｄ２Ｏ３系陶瓷的导电性，研究表明，此系统陶瓷的导电载流子是氧缺位中存在的施主电子；添加适量的Ｎｄ２Ｏ３，可以改善ＢａＰｂＯ３陶瓷的导电性和ＰＴＣ特性     

A Numerical Study of Vortex and Precipitating Cloud Merging in Middle Latitudes

We mainly focus on the study of precipitating cloud merging associated with vortex merging. The vortex and precipitating cloud merging are simulated by the cloud resolving model from 0000 21 to 1800 23 July 2003. The results show that the model well simulates vortex circulation associated with precipitating clouds. It is also proven that the vortex merging follows the precipitating cloud merging although vortices show the spatial and temporal differences. The convection vorticity vector is introduced to describe the merging processes. Two merging cases are identified during the 42-h simulation and are studied.