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Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process |
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| Authors: | LI Hai-Xia LI Zhan-Kui WANG Fang-Cong WANG Zhu-Sheng WANG Xiu-Hua LI Chun-Yan Institute of Modern Physics Chinese Academy of Science Lanzhou China Institute of Microelectronics School of Physical Science Technology Lanzhou University China |
| Institution: | LI Hai-Xia1,1) LI Zhan-Kui1 WANG Fang-Cong2 WANG Zhu-Sheng1 WANG Xiu-Hua1 LI Chun-Yan1 1 Institute of Modern Physics,Chinese Academy of Science,Lanzhou 730000,China 2 Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,China |
| Abstract: | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved. |
| Keywords: | nuclear radiation detector two-step annealing reverse body resistance |
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