316L不锈钢基体上磁控溅射Er2O3／Er涂层的后处理研究

采用磁控溅射的方法在316L不锈钢表面制备了氧化铒涂层.选用金属铒作为过渡层,研究了不同热处理温度对涂层相组成、表面形貌以及涂层与基底结合情况的影响.XRD,SEM及膜基结合力分析结果表明,带有过渡层的氧化铒涂层表面致密、均匀,退火处理使氧化铒结晶性能提高,经过800℃热处理,生成了金属间化合物ErFe3提高了涂层与基底的结合强度.绝缘电阻率测试结果表明.Er2O3涂层绝缘电阻率在1×1013～1×1015Ω·cm,绝缘性能良好.     

Enhancement of electron–ion recombination rates at low energy range in the heavy ion storage ring CSRm

Recombination of Ar¹⁴⁺, Ar¹⁵⁺, Ca¹⁶⁺, and Ni¹⁹⁺ ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^3.0, reproducing the low-energy recombination enhancement effects found in other previous experiments.     

Simulation of loss of uranium ions due to charge changing processes in the CSRm ring

Significant beam loss caused by the charge exchange processes and ion impact-induced outgassing may restrict the maximum number of accelerated heavy ions during the high intensity operation of an accelerator. In order to control beam loss due to charge exchange processes and confine the generated desorption gas, tracking of the beam loss distribution and installation of absorber blocks with low-desorption rate material at appropriate locations in the main Cooler Storage Ring (CSRm) at the Institute of Modern Physics, Lanzhou, will be performed. The loss simulation of uranium ions with electron-loss is presented in this report and the conclusion is that most charge changed particles are lost in the second dipole of the super-period structure. The calculation of the collimation efficiency of the CSRm ring will be continued in the future.     

HIAF电子冷却装置高精度线圈磁轴测量

强流重离子加速器装置（HIAF）将采用电子冷却技术,降低重离子束流的发射度和动量分散,提高核物理及原子物理实验的精度与亮度。电子冷却装置的冷却段磁场均匀度是影响冷却效率的主要参数,HIAF电子冷却装置采用多个独立高精度线圈串联产生纵向磁场的设计,获得极高的冷却段磁场均匀度。本文介绍了一种测量高精度线圈磁轴偏角的装置,采用定位装置测量线圈的几何对称轴,通过旋转霍尔探头测量线圈中心平面上的径向与轴向磁场分布,再根据磁场测量数据计算出线圈磁轴与几何对称轴之间的偏角。实际测量表明该装置的磁轴偏角测量精度达到±0.10 mrad。测量得到的HIAF电子冷却装置冷却段线圈样品的磁轴偏角为（1.28±0.10）mrad,达到设计要求。     

IH型漂移管直线加速器的束流动力学研究（英文）

为了提高兰州重离子加速器冷却储存环（HIRFL-CSR）的运行效率、改善加速器输出束流品质,并实现几个加速装置分时供束,提高整个重离子加速装置的利用率,特为（HIRFL-CSR）增建一台新的注入器--CSRLINAC。在108.48 MHz的RFQ之后的CSR-LINAC主加速段,主要由一台108.48 MHz和两台216.96 MHz的IH型漂移管直线加速器组成,用于加速荷质比为1/8.5~1/3之间的重离子,其最大的束流流强为3 mA,并将粒子从0.3 MeV/u加速到3.71 MeV/u。运用KONUS动力学原理,在满足设计指标的情况下,首先利用TraceWin程序进行中能束线MEBT设计,后针对高频腔体设计和束流匹配的基本参数的系列讨论,特别是对CSR-LINAC的中能束流匹配线、参数选择和IH型KONUS结构的漂移管直线加速器进行设计模拟优化。最终得出,在保证腔体设计指标和95.3%的传输效率的情况下,该紧凑型直线加速结构经过三个腔体的加速后,束流的纵向归一化均方根发射度增长仅有25%;同时发现,当流强达到3 mA时,存在空间电荷效应,导致其纵向相宽增长约25%,最大横向包络也存在16.5%的涨落。In order to improve the operation efficiency of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou (HIRFL-CSR), a heavy ion linac (linear accelerator) was proposed and designed as a new injector for HIRFL-CSR. Following the 108.48 MHz Radio-Frequency Quadrupole (RFQ), three tanks in total with Interdigital H-mode drift tube linac (IH-DTL) structure are installed to boost the beam energy from 0.3 to 3.71 MeV/u, and the beam current of ions with charge-to-mass ratio from 1/8.5 to 1/3 can reach to 3 mA. The first tank operatesat the same frequency as the RFQ, and the rest two operate at 216.96 MHz. The “Combined Zero-Degree Synchronous Particle Structure” (KONUS) beam dynamics was used in the beam dynamics design. The overview of the physics design on the main accelerating components, including RF design and beam dynamics design are introduced in this paper. The optimized structure design, fabrication status and simulation results are presented in this contribution. It shows that under the condition of assurance of 95.3% transmission efficiency, the normalized rms emittance is about 25%. When the beam current is up to 3 mA, owing to the space charge effect, the increase of longitudinal phase spread and transverse envelope are about 25% and 16.3%, respectively.     

HIRFL-CSRm冷却束流寿命

实验研究了HIRFL-CSRm中电子冷却装置对C6+,Ar15+两种束流寿命的影响。首先,通过对比实验的测量确定电子冷却可以有效提高束流寿命;其次,探究了电子冷却装置中的各项参数（主要是电子束密度分布、流强、能量、绝热展开因子）是如何影响束流寿命的,通过改变电子束参数,测量束流寿命的变化趋势和规律,并且结合电子冷却相关理论对实验结果给予解释,最终通过实验优化和确定最佳的冷却装置参数,使束流在HIRFL-CSRm上获得了较高的寿命,从而提高HIRFL-CSRm束流累积过程中的流强增益。     

Density functional theory analysis of electronic structure and optical properties of La-doped Cd_2SnO_4 transparent conducting oxide

The electronic structural, effective masses of carriers, and optical properties of pure and La-doped Cd_2SnO_4 are calculated by using the first-principles method based on the density functional theory. Using the GGA+U method, we show that Cd_2SnO_4 is a direct band-gap semiconductor with a band gap of 2.216 eV, the band gap decreases to 2.02 e V and the Fermi energy level moves to the conduction band after La doping. The density of states of Cd_2SnO_4 shows that the bottom of the conduction band is composed of Cd 5 s, Sn 5 s, and Sn 5 p orbits, the top of the valence band is composed of Cd 4d and O 2p, and the La 5 d orbital is hybridized with the O 2 p orbital, which plays a key role at the conduction band bottom after La doping. The effective masses at the conduction band bottom of pure and La-doped Cd_2SnO_4 are 0.18 m0 and 0.092 m_0, respectively, which indicates that the electrical conductivity of Cd_2SnO_4 after La doping is improved. The calculated optical properties show that the optical transmittance of La-doped Cd_2SnO_4 is 92%, the optical absorption edge is slightly blue shifted, and the optical band gap is increased to 3.263 eV. All the results indicate that the conductivity and optical transmittance of Cd_2SnO_4 can be improved by doping La.