A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal–oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson–Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.     

一种机械式电表读数区域的自动定位方法

针对电表读数区域自动定位这一关键技术的具体应用,提出了一种适合四种类型机械式电表的读数区域自动定位算法;采用同态滤波增加图像前景与背景之间的亮度差异,同时利用改进的Bersen算法,有效的将电表前景与背景分开;利用区域定位对图像进行粗定位,并对粗定位区域纵向投影,根据目标字符的纹理特征和先验知识对目标区域精确定位;经实验证明,该算法对其中四种电表图像的适应性良好。