TFA-MOD法YBa2Cu3O（7-δ）超导薄膜的交流磁化率研究

通过三氟乙酸盐-金属有机沉积(TFA-MOD)方法在LaAlO3单晶基片上制备了YBa2Cu3O7-δ(YBCO)高温超导薄膜,并测定在垂直于a-b面的外加交变磁场下薄膜样品的交流磁化率随温度的变化关系,在频率543.2 Hz、振幅1 V条件下,样品的超导转变发生在91 K附近.交流磁化率虚部峰值温度Tp随着磁场振幅的变大而向低温区移动,随着频率的增大而向高温区移动,这些现象与磁通蠕动模型相一致,峰值温度TP与外交变磁场的振幅Hac满足Hcaε(1-Tp/Tct)n的关系,其n～1.55;而与频率之间满足1/Tp与lnf的线性关系,可能是由于TAF-MOD薄膜样品中较多孔洞和非位错缺陷的出现使其偏离一般物理气相沉积薄膜样品具有的SNS型连接(n～2).根据频率f与温度T的Arrhenius公式以及二维简约的Bean模型,得到当前薄膜样品的激活能U与电流密度J、以及J与温度T的标度关系.     

Photon number resolvability of multi-pixel superconducting nanowire single photon detectors using a single flux quantum circuit

Superconducting nanowire single-photon detectors (SNSPDs) are typical switching devices capable of detecting single photons with almost 100% detection efficiency. However, they cannot determine the exact number of incident photons during a detection event. Multi-pixel SNSPDs employing multiple read-out channels can provide photon number resolvability (PNR), but they require increased cooling power and costly multi-channel electronic systems. In this work, a single-flux quantum (SFQ) circuit is employed, and PNR based on multi-pixel SNSPDs is successfully demonstrated. A multi-input magnetically coupled DC/SFQ converter (MMD2Q) circuit with a mutual inductance M is used to combine and record signals from a multi-pixel SNSPD device. The designed circuit is capable of discriminating the amplitude of the combined signals in accuracy of Φ₀/M with Φ₀ being a single magnetic flux quantum. By employing the MMD2Q circuit, the discrimination of up to 40 photons can be simulated. A 4-parallel-input MMD2Q circuit is fabricated, and a PNR of 3 is successfully demonstrated for an SNSPD array with one channel reserved for the functional verification. The results confirm that an MMD2Q circuit is an effective tool for implementing PNR with multi-pixel SNSPDs.     

柔性铜镍合金基带的织构及其磁性研究(英文)

研究了Cu60-Ni40wt%(简称Cu60)和CudO-Ni60wt%(简称Cu4O)两种不同组分的铜镍合金基带在不同温度下退火织构的形成过程,其中名义组分为Cu60-Ni40wt%的合金在650～1000℃退火一小时可获得良好的(001)织构.半高宽随着退火温度的升高而下降.1000~C退火后φ扫描的半高宽(FWHM)为5.5°,ω扫描的半高宽为6.1°.组分为Cu60-Ni40wt%的合金1150℃退火仍不能形成良好的织构.对于Cu40居其里温度点在室温以上,饱和磁矩大于Ni-at.%5W;而Cu60的居里温度点在20K,在77K下表现顺磁性质,其饱和磁矩仅为Ni-at.%5W基带的10%.在77K下Cu60的电阻为7.5×10-9Ω·m,比Ni-at.%5W的电阻要低的多.     

Development of series SQUID array with on-chip filter for TES detector

A cold preamplifier based on superconducting quantum interference devices(SQUIDs)is currently the preferred readout technology for the low-noise transition edge sensor(TES).In this work,we have designed and fabricated a series SQUID array(SSA)amplifier for the TES detector readout circuit.In this SSA amplifier,each SQUID cell is composed of a first-order gradiometer formed using two equally large square washers,and an on-chip low pass filter(LPF)as a radiofrequency(RF)choke has been developed to reduce the Josephson oscillation interference between individual SQUID cells.In addition,a highly symmetric layout has been designed carefully to provide a fully consistent embedded electromagnetic environment and achieve coherent flux operation.The measured results show smooth V-Φcharacteristics and a swing voltage that increases linearly with increasing SQUID cell number N.A white flux noise level as low as 0.28μφ;/Hz;is achieved at 0.1 K,corresponding to a low current noise level of 7 pA/Hz;.We analyze the measured noise contribution at mK-scale temperatures and find that the dominant noise derives from a combination of the SSA intrinsic noise and the equivalent current noise of the room temperature electronics.     

NdBa2Cu3O7-δ/YBa2Cu3O7-δ多层膜体系的外延结构和磁通钉扎的研究

采用脉冲激光沉积技术.在单晶SrTiO3基底上外延生长了一系列名义结构为p×(NdBa2Cu3O7-δ(m)/YBazCu3O7-δ(n))的多层膜和准多层膜(单元层NdBa2Cu3O7-δ较厚而YBa2Cu3O7-δ呈非连贯的岛状分布,m,n为激光脉冲数,p为重复周期).样品的超导转变温度在87-91 K范围,具体大小取决于不同的调制结构,多层膜的重复周期越大,层状界面越多,超导转变温度就越低.磁传输测量表明,准多层的样品不仅具有较高的超导转变温度,而且具有较强的磁通钉扎性能,77 K零场下的临界电流密度高达4×106 A/cm2,显示出良好的应用前景.     

NdBa2Cu3O7-δ/YBa2Cu3O7-δ多层膜体系的外延结构和磁通钉扎的研究

采用脉冲激光沉积技术,在单晶SrTiO₃基底上外延生长了一系列名义结构为p×(NdBa₂Cu₃O_7-δ(m)/YBa₂Cu₃O_7-δ(n))的多层膜和准多层膜(单元层NdBa₂Cu₃O_7-δ较厚而YBa₂Cu₃O_7-δ呈非连贯的岛状分布,m,n为激光脉冲数,p为重复周期).样品的超导转变温度在87—91 K范围,具体大小取决于不同的调制结构,多层膜的重复周期越大,层状界面越多,超导转变温度就越低.磁传输测量表明,准多层的样品不仅具有较高的超导转变温度,而且具有较强的磁通钉扎性能,77K零场下的临界电流密度高达4×10⁶ A/cm²,显示出良好的应用前景. 关键词： 2Cu₃O_7-δ')" href="#">NdBa₂Cu₃O_7-δ 多层膜 磁通钉扎 临界电流密度     

高温超导涂层导体CeO2缓冲层的化学溶液法制备及其热反应过程研究

本文通过化学溶液法在双轴织构的金属Ni-W衬底上外延生长了CeO2超导涂层导体缓冲层薄膜.X衍射极图表明其面内外织构良好.扫描电子显微镜和原子力显微镜观察薄膜表面光滑、平整且粗糙度低.采用差热分析研究了升温速率及样品质量对前驱溶液热反应过程的影响,结果表明其热反应主要经历了三个过程,其中吸附水的脱去和醋酸组的解离分别发生在110～140℃与230～240℃两个温度范围内,且受升温速率的影响很小,表明这两个反应都在较短的时间内完成.而发生在250～500℃温度段的氧化合成反应则需要较长的时间,其反应结束温度与升温速率近似成线性增加.X衍射分析进一步证实了上述三个热反应过程,当温度达到700℃时CeO2可以得到完好的结晶.     

高温超导薄膜晶界的电传输特性

本文较系统地总结和分析了氧化物高温超导薄膜晶界的电流电压、薄膜晶界及其二维网络中的临界电流密度等电传输特性,讨论了薄膜晶界电流密度对磁场的依赖关系和各向异性特征,介绍了薄膜晶界电传输特性的光电辐射效应、化学掺杂效应和电场效应.这些针对超导薄膜晶界电传输特性的研究不仅对高温超导弱连接和电子配对机制的理解,而且对基于双轴织构和薄膜外延技术的第二代高温超导带材的发展具有重要意义.