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排序方式: 共有18条查询结果,搜索用时 31 毫秒
1.
ECR微波等离子体离子输运的数值模拟   总被引:2,自引:0,他引:2  
建立了ECR微波等离子体源离子输运的平板和圆柱模型,对离子历经的空间区域的输运过程进行了数值研究。采用Monte Carlo(M-C)方法模拟了存在外磁场情况下,离子离开开放电室后历经中性区、鞘层区、最后被加负偏压的工作表面吸收的全过程,考虑了离子与中性粒子的电荷交换碰撞玫弱性散性,统一处理了中性区和鞘层区电势的衔接,采用曲线拟合,电势自洽迭代方法把中性区和鞘层区衔接起来,得到了光滑自治的电势分布曲线和鞘层区不同位置处的速度分布、能量分布及角分布。  相似文献   
2.
研究了C20团簇在几种金属氧化物(Al2O3,SiO2)中穿行时发生的库仑爆炸过程.采用线性介电响应理论,并结合Mermin形式的介电函数,得到了团簇中各组成离子的空间感应势,其中组成团簇中各组成离子的电荷分布情况由Brandt-Kitagawa有效电荷理论模型来描述.通过求解运动方程得到离子团结构随时间的演化过程,并采用Monte Carlo方法模拟了爆炸过程中的多重散射现象.我们发现,尾流效应使团簇的空间结构和电荷分布呈现非对称性.  相似文献   
3.
A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.  相似文献   
4.
在刻蚀工艺中,通常会在感性耦合等离子体源的下极板上施加偏压源,以实现对离子能量和离子通量的独立调控.本文采用整体模型双向耦合一维流体鞘层模型,在Ar/O2/Cl2放电中,研究了偏压幅值和频率对等离子体特性及离子能量角度分布的影响.研究结果表明:当偏压频率为2.26 MHz时,随着偏压的增加,除了Cl-离子和ClO+离子的密度先增加后降低最后再增加外,其余带电粒子、O原子和Cl原子的密度都是先增加后基本保持不变最后再增加.当偏压频率为13.56和27.12 MHz时,除了Cl-离子和Cl2+离子外,其余粒子密度随偏压的演化趋势与低频结果相似.随着偏压频率的提高,在低偏压范围内(<200 V),由于偏压源对等离子体加热显著增加,导致了带电粒子、O原子和Cl原子的密度增加;而在高偏压范围内(>300 V),由于偏压源对等离子体加热先减弱后增强,导致除了Cl2+离子和Cl-  相似文献   
5.
A two-dimensional self-consistent fluid model is employed to investigate radio-frequency process parameters on the plasma properties in Ar microdischarges. The neutral gas density and temperature balance equations are taken into account. We mainly investigate the effect of the electrode gap on the spatial distribution of the electron density and electron temperature profiles, due to a mode transition from the regime(secondary electrons emission is responsible for the significant ionization) to the regime(sheath oscillations and bulk electrons are responsible for sustaining discharge) induced by a sudden decrease of electron density and electron temperature.The pressure, radio-frequency sources frequency and voltage effects on the electron density are also elaborately investigated.  相似文献   
6.
A theoretical model is established to simulate the penetration process of C20 clusters in oxides (Al2O3, SiO2) at different incident velocities. The induced spatial potential by the incident clusters is described by the dielectric response formalism, in which the Mermin-type dielectric function is adopted to provide a realistic evaluation of the electronic properties of the oxides. The charge distribution of individual ions is derived by using the Brandt-Kitagawa effective charge model, also under the consideration of the asymmetric influence from the wake potential. The stopping power of the clusters and the Coulomb explosion processes are derived by solving the motion equation of the individual ions, when taking into account the multiple scattering effect simulated by using the Monte Carlo method. It is found that the dynamical interaction potential between ions leads to a spatial asymmetry to the cluster structure and the charge distribution for high velocity clusters, and will not be in effect as the incident velocities decrease.  相似文献   
7.
A self-consistent fluid model, which incorporates density and flux balances of electrons, ions, neutrals and nanoparticles, electron energy balance, and Poisson's equation, is employed to investigate the capacitively coupled silane discharge modulated by dual-frequency electric sources. In this discharge process, nanoparticles are formed by a successive chemical reactions of anion with silane. The density distributions of the precursors in the dust particle formation are put forward, and the charging, transport and growth of nanoparticles are simulated. In this work, we focus our main attention on the influences of the high-frequency and low-frequency voltage on nanoparticle densities, nanoparticle charge distributions in both the bulk plasma and sheath region.  相似文献   
8.
宋远红  王友年  宫野 《物理学报》1999,48(7):1275-1281
利用介电响应理论和镜像反射模型对氢离子在固体表面掠角散射和能量损失进行了数值模拟.离子在表面散射时同时受到表面上原子的库仑排斥作用和表面电子气的动力学相互作用,后者是表面电子受运动的正离子扰动所产生,用线性介电响应理论来确定.在高速和低速情况下,分别采用仅与频率有关的局域介电函数和局域场修正介电函数来确定表面电子气产生的动力学相互作用力.计算结果与实验结果作了比较.发现入射速度很低时能量损失随入射角度变化不太明显,而当速度很高时能量损失随入射角度的变大而有所增加. 关键词:  相似文献   
9.
本文研究了C20团簇在几种金属氧化物(Al2O3,SiO2)中穿行时发生的库仑爆炸过程,采用线性介电响应理论,并结合Memfin形式的介电函数,得到了团簇中各组成离子的空间感应势,其中组成团簇中各组成离子的电荷分布情况由Brandt-Kitagawa有效电荷理论模型来描述。通过求解运动方程得到离子团结构随时间的演化过程,并采用Monte Carlo方法模拟了爆炸过程中的多重散射现象。我们发现,尾流效应使团簇的空间结构和电荷分布呈现非对称性。  相似文献   
10.
Yong-Xin Liu 《中国物理 B》2022,31(8):85202-085202
Two classic radio-frequency (RF) plasmas, i.e., the capacitively and the inductively coupled plasmas (CCP and ICP), are widely employed in material processing, e.g., etching and thin film deposition, etc. Since RF plasmas are usually operated in particular circumstances, e.g., low pressures (mTorr-Torr), high-frequency electric field (13.56 MHz-200 MHz), reactive feedstock gases, diverse reactor configurations, etc., a variety of physical phenomena, e.g., electron resonance heating, discharge mode transitions, striated structures, standing wave effects, etc., arise. These physical effects could significantly influence plasma-based material processing. Therefore, understanding the fundamental processes of RF plasma is not only of fundamental interest, but also of practical significance for the improvement of the performance of the plasma sources. In this article, we review the major progresses that have been achieved in the fundamental study on the RF plasmas, and the topics include 1) electron heating mechanism, 2) plasma operation mode, 3) pulse modulated plasma, and 4) electromagnetic effects. These topics cover the typical issues in RF plasma field, ranging from fundamental to application.  相似文献   
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