Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond(UNCD)films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries(GBs)(R_b) significantly increases after the C~+ implantation, and decreases with the increase in the annealing temperature(T_a) from 650℃ to 1000℃. This implies that the C~+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at T_a above 900℃, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at T_a above 900℃, which leads to lower R_b of samples annealed at 900 and 1000℃. With the increase in T_a to 1000℃, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower R_b.     

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al₂O₃ gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.     

新型热释电晶体低温相偏硼酸钡电学性能和它在高功率红外探测器中应用的可能性

本文首次介绍偏硼酸钡低温相β-BaB₂O₄晶体的电学性能。通过热释电系数、介电常数、损耗角、直流电阻率的实验研究,结合比热容和光透过率以及耐强辐照等测量,阐明此晶体在高功率红外探测器中应用的可能性。 关键词：     

Large scale fabrication of nitrogen vacancy-embedded diamond nanostructures for single-photon source applications

Some color centers in diamond can serve as quantum bits which can be manipulated with microwave pulses and read out with laser,even at room temperature.However,the photon collection efficiency of bulk diamond is greatly reduced by refraction at the diamond/air interface.To address this issue,we fabricated arrays of diamond nanostructures,differing in both diameter and top end shape,with HSQ and Cr as the etching mask materials,aiming toward large scale fabrication of single-photon sources with enhanced collection efficiency made of nitrogen vacancy(NV) embedded diamond.With a mixture of O_2 and CHF_3 gas plasma,diamond pillars with diameters down to 45 nm were obtained.The top end shape evolution has been represented with a simple model.The tests of size dependent single-photon properties confirmed an improved single-photon collection efficiency enhancement,larger than tenfold,and a mild decrease of decoherence time with decreasing pillar diameter was observed as expected.These results provide useful information for future applications of nanostructured diamond as a single-photon source.