| PECVD纳米晶粒硅薄膜的可见电致发光 |
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| 引用本文： | 佟嵩,刘湘娜,王路春,阎峰,鲍希茂.PECVD纳米晶粒硅薄膜的可见电致发光[J].物理学报,1997,46(6):1217-1222. |
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| 作者姓名： | 佟嵩 刘湘娜 王路春 阎峰 鲍希茂 |
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| 作者单位： | 南京大学物理系固体微结构物理国家重点实验室 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | 在用等离子体增强化学汽相淀积的嵌有纳米晶粒硅薄膜中观测到电致发光．发光谱处在500—800nm之间，它有两个分别位于630—680nm和730nm附近的峰，两个峰的强度与薄膜的电导率有密切关系．根据这种材料的结构特性对载流子的传导通道进行了讨论，并且对发光机制进行了初步解释
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| 关 键 词： | PECVD 纳米晶 硅 薄膜 电致发光器件 |
| 收稿时间： | 1996-07-31 |
VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION |
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| TONG SONG,LIU XIANG-NA,WANG LU-CHUN,YAN FENG and BAO XI-MAO.VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION[J].Acta Physica Sinica,1997,46(6):1217-1222. |
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| Authors: | TONG SONG LIU XIANG-NA WANG LU-CHUN YAN FENG and BAO XI-MAO |
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| Abstract: | We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si∶H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500nm to 850nm with two peaks located at about 630—680nm and 730nm respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural- characteristics, and a tentative explanation of the light emission mechanism is proposed. |
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