双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射

高端芯片制造所需要的极紫外光刻技术位于我国当前面临35项"卡脖子"关键核心技术之首.高转换效率的极紫外光源是极紫外光刻系统的重要组成部分.本文通过采用双激光脉冲打靶技术实现较强的6.7 nm极紫外光输出.首先,理论计算Gd¹⁸⁺—Gd²⁷⁺离子最外层4d壳层的4p-4d和4d-4f能级之间跃迁、以及Gd¹⁴⁺—Gd¹⁷⁺离子最外层4f壳层的4d-4f能级之间跃迁对波长为6.7 nm附近极紫外光的贡献.其后开展实验研究,结果表明,随着双脉冲之间延时的逐渐增加,波长为6.7 nm附近的极紫外光辐射强度呈现先减弱、后增加、之后再减弱的变化趋势,在双脉冲延时为100 ns处产生的极紫外光辐射最强.并且,在延时为100 ns处产生的光谱效率最高,相比于单脉冲激光产生的光谱效率提升了33%.此外,发现双激光脉冲打靶技术可以有效地减弱等离子体的自吸收效应,获得的6.7 nm附近极紫外光谱宽度均小于单激光脉冲打靶的情形,且在脉冲延时为30 ns时刻所产生的光谱宽度最窄,约为单独主脉冲产生极紫外光谱宽度的1/3.同时...     

线上线下混合式实验教学模式的改革与探索

大学化学实验课程是培养材料、化学、化工等专业人才应用基本操作和理论解决实际问题的综合性实践训练环节。文章探讨了当前大学化学实验发展由于受到仪器设备大型化、专业化、成本大、更新快等因素限制出现瓶颈,设计了线上线下混合实验教学模式,进行相应的软硬件建设,并开展线上线下混合式实验教学模式的改革与探索。该教学模式具有良好的教学效果,并且可复制可推广,为创新人才的培养和实验教学的创新提供了有益的借鉴。     

Exact synchronization and asymptotic synchronization for linear ODEs

Science China Mathematics - This paper studies exact synchronization and asymptotic synchronization problems for a controlled linear system of ordinary differential equations. In this paper, we...     

Visible-light-induced,autopromoted nickel-catalyzed three-component arylsulfonation of 1,3-enynes and mechanistic insights

Science China Chemistry - A light-induced, nickel-catalyzed three-component arylsulfonation of 1,3-enynes in the absence of photocatalyst is reported. This methodology exhibited mild conditions,...     

氮分子A3Σu+、B3Пg、C3Пu电子态的高温高振转光谱研究

采用态平均（CASSCF）/高度相关多参考组（MRCI）方法，对N2分子A3Σu+、B3Пg、C3Пu电子态的势能、跃迁偶极矩进行了高度相关的精确计算．计算的势能在平衡位置附近与RKR拟合的势能曲线非常一致，获得的跃迁偶极矩与已有实验值符合很好。首次对A3Σu+、B3Пg、C3Пu电子态的振转光谱常数随振动量子数v的变化进行系统定量计算，其结果与已有的实验观测数据相符．同时，获得了N2分子第一正带系的0-1、0-2、1-0、1-2、1-3、2-0、2-1、2-3、3-0、3-1和3-2光谱带分别在300，3000，6000，10000K时的谱线强度，如1-0带在3000，6000，10000K时的高温谱线带强度分别为1.58543×10-16 cm-1/(分子 cm-2)、6.07889×10-17 cm-1/(分子 cm-2)和2.3781×10-17 cm-1/(分子 cm-2)．这些结果对N2分子进一步的理论研究、实际应用和高温大气的建模与研究具都有一定的参考价值．     

Normal approximation and fourth moment theorems for monochromatic triangles

Given a graph sequence denote by T₃(G_n) the number of monochromatic triangles in a uniformly random coloring of the vertices of G_n with colors. In this paper we prove a central limit theorem (CLT) for T₃(G_n) with explicit error rates, using a quantitative version of the martingale CLT. We then relate this error term to the well-known fourth-moment phenomenon, which, interestingly, holds only when the number of colors satisfies . We also show that the convergence of the fourth moment is necessary to obtain a Gaussian limit for any , which, together with the above result, implies that the fourth-moment condition characterizes the limiting normal distribution of T₃(G_n), whenever . Finally, to illustrate the promise of our approach, we include an alternative proof of the CLT for the number of monochromatic edges, which provides quantitative rates for the results obtained in [7].     

Convergence of the viscosity solution of non-autonomous Hamilton-Jacobi equations

In this paper,we investigate the non-autonomous Hamilton-Jacobi equation ■ where H is 1-periodic with respect to t and M is a compact Riemannian manifold without boundary.We obtain the viscosity solution denoted by T_(t_0)~tφ(x) and show T_(t_0)~tφ(x) converges uniformly to a time-periodic viscosity solution u~*(x,t) of ?_tu+H(t,x,?_xu,u)=0.     

Power spectral density analysis for nonlinear systems based on Volterra series

Applied Mathematics and Mechanics - A consequence of nonlinearities is a multi-harmonic response via a mono-harmonic excitation. A similar phenomenon also exists in random vibration. The power...     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。