分数填补下两总体分位数差异的经验似然置信区间

设有两个非参数总体,其样本数据不完全,用分数填补法补足缺失数据,得到两总体的"完全"样本数据,在此基础上构造两总体分位数差异的经验似然置信区间.模拟结果显示,分数填补法可以得到更加精确的置信区间.     

混合缺失机制下两总体差异的半经验似然置信区间

假定两个总体x与y均有数据缺失,它们的分布函数分别为F(·)与G_θ(·),其中F(·)未知,G_θ(·)的概率密度函数g_θ(·)形式已知,仅依赖于一些未知的参数,利用Fractional填补法填补缺失值,在一定的条件下证明了缺失数据下两总体差异指标的半经验似然比统计量的渐近分布为x_1~2,由此可构造两总体差异指标的经验似然置信区间.     

镜面起伏对1.55μm Si基MEMS光滤波器的影响

用传输矩阵方法,在简化的光学模型基础上,分别讨论了分布式Bragg反射镜DBR(Distributed Bragg Reflector)的生长精度及镜面起伏对1.55 μm Si基MEMS(Micro-Electro-Mechanical-System)可调谐光滤波器透射谱的影响.计算表明:DBR生长误差仅使主透射峰位置发生变化,而镜面起伏是导致主透射峰性能劣化的主要原因,它使得FWHM增大,透射峰强度下降.理论计算结果能较好地解释实验现像.在此基础上,进一步讨论了引起镜面起伏的多种原因,并提出了可能的解决方法.     

High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.     

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.