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排序方式: 共有135条查询结果,搜索用时 15 毫秒
1.
A flashing ratchet model of a two-headed molecular motor in a two-dimensional potential is proposed to simulate the hand-over-hand motion of kinesins.Extensive Langevin simulations of the model are performed.We discuss the dependences of motion and efficiency on the model parameters,including the external force and the temperature.A good qualitative agreement with the expected behavior is observed. 相似文献
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Ninad?Tushar?Pandit Aniruddha?Bhalchandra?PanditEmail author 《Applied biochemistry and biotechnology》2014,172(7):3606-3620
In the present work, interactions between common media components and fermentation conditions were explored to come up with a simple media recipe for extracellular β-glucosidase (Dβ-gl) synthesis from Debaryomyces pseudopolymorphus to substitute cellobiose, which is currently used as a sole carbon source. Taguchi L25 orthogonal array design was used to screen factors influencing Dβ-gl synthesis (carbon, organic nitrogen, inorganic nitrogen, trace elements, inoculum volume, and fermentation time). A significant influence of xylose, peptone, and potassium nitrate as carbon, organic nitrogen, and inorganic nitrogen sources, respectively, on Dβ-gl synthesis was identified by Taguchi. These factors were further optimized using central composite rotatable design (CCRD) of response surface methodology (RSM). The results showed that in the range studied, potassium nitrate had insignificant effect while xylose, peptone, and xylose-peptone interaction had a significant effect on Dβ-gl synthesis. Peptone/xylose ratio of 1.33 was found to be an important parameter for inducing Dβ-gl synthesis. The regression coefficient (R 2) of 0.915 and P value of <0.0003 for the model indicated that it was highly significant. The maximum activity obtained after RSM (32.2 U/ml) was comparable with that obtained (68.8 U/ml) when cellobiose (20 g/l) was used as a sole carbon source. Considering the cost difference between xylose and cellobiose, a 16-fold cost reduction could be obtained for equivalent Dβ-gl yield. Fed-batch fermentations were carried out wherein peptone/xylose ratio of 1.33 was maintained and continuous Dβ-gl synthesis was observed. 相似文献
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A sea-air oscillator model is studied using the time delay theory.The aim is to find an asymptotic solving method for the El Nio -southern oscillation (ENSO) model.Employing the perturbed method,an asymptotic solution of the corresponding problem is obtained.Thus we can obtain the prognoses of the sea surface temperature (SST) anomaly and the related physical quantities. 相似文献
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Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures 下载免费PDF全文
Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future. 相似文献
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Field-assisted spin-polarized electron transport through a single quantum well with spin-orbit coupling 下载免费PDF全文
We have investigated theoretically the field-driven electron transport through a single-quantum-well semiconductor heterostructure with spin-orbit coupling.The splitting of the asymmetric Fano-type resonance peaks due to the Dresselhaus spin-orbit coupling is found to be highly sensitive to the direction of the incident electron.The splitting of the Fano-type resonance induces the spin-polarization dependent electron current.The location and the line shape of the Fano-type resonance can be controlled by adjusting the energy and the direction of the incident electron,the oscillation frequency,and the amplitude of the external field.These interesting features may be used to devise tunable spin filters and realize pure spin transmission currents. 相似文献
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Effects of (LiCe) co-substitution on the structural and electrical properties of CaBi2Nb209 ceramics 下载免费PDF全文
The piezoelectric,dielectric,and ferroelectric properties of the(LiCe) co-substituted calcium bismuth niobate(CaBi2Nb2O9,CBNO) are investigated.The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tan δ decreased.This makes poling using(LiCe) co-substitution easier.The ceramics(where represents A-site Ca2+ vacancies,possess a pure layered structure phase and no other phases can be found.The Ca0.88(LiCe)0.04 0.04Bi2Nb2O9 ceramics possess optimal piezoelectric properties,with piezoelectric coefficient(d 33) and Curie temperature(TC) found to be 13.3 pC/N and 960 C,respectively.The dielectric and piezoelectric properties of the(LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours.This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications. 相似文献
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Comparison of the formation epitaxial graphenes on Si- and process and properties of C-face 6H-SiC substrates 下载免费PDF全文
In this paper,the epitaxial graphene layers grown on Si-and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 C.By using atomic force microscopy and Raman spectroscopy,we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates,including the hydrogen etching process,the stacking type,and the number of layers.Hopefully,our results will be useful for improving the quality of the epitaxial graphene on SiC substrate. 相似文献
9.
The doctor-blade method is investigated for the preparation of Cu2ZnSnS4 films for low-cost solar cell application.Cu2ZnSnS4 precursor powder,the main raw material for the doctor-blade paste,is synthesized by a simple ball-milling process.The doctor-bladed Cu2ZnSnS4 films are annealed in N2 ambient under various conditions and characterized by X-ray diffraction,ultraviolent/vis spectrophotometry,scanning electron microscopy,and current-voltage(J-V) meansurement.Our experimental results indicate that(i) the X-ray diffraction peaks of the Cu2ZnSnS4 precursor powder each show a red shift of about 0.4°;(ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu 2 ZnSnS 4,whereas an overlong annealing introduces defects;(iii) the band gap value of the doctor-bladed Cu 2 ZnSnS 4 is around 1.41 eV;(iv) the short-circuit current density,the open-circuit voltage,the fill factor,and the efficiency of the best Cu2ZnSnS4 solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO2/In2S3/Cu2ZnSnS4/Mo are 7.82 mA/cm2,240 mV,0.29,and 0.55%,respectively. 相似文献
10.
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique 下载免费PDF全文
Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge. 相似文献