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The doctor-blade method is investigated for the preparation of Cu2ZnSnS4 films for low-cost solar cell application.Cu2ZnSnS4 precursor powder,the main raw material for the doctor-blade paste,is synthesized by a simple ball-milling process.The doctor-bladed Cu2ZnSnS4 films are annealed in N2 ambient under various conditions and characterized by X-ray diffraction,ultraviolent/vis spectrophotometry,scanning electron microscopy,and current-voltage(J-V) meansurement.Our experimental results indicate that(i) the X-ray diffraction peaks of the Cu2ZnSnS4 precursor powder each show a red shift of about 0.4°;(ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu 2 ZnSnS 4,whereas an overlong annealing introduces defects;(iii) the band gap value of the doctor-bladed Cu 2 ZnSnS 4 is around 1.41 eV;(iv) the short-circuit current density,the open-circuit voltage,the fill factor,and the efficiency of the best Cu2ZnSnS4 solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO2/In2S3/Cu2ZnSnS4/Mo are 7.82 mA/cm2,240 mV,0.29,and 0.55%,respectively.  相似文献   
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陈勤妙  李振庆  倪一  程抒一  窦晓鸣 《中国物理 B》2012,21(3):38401-038401
The doctor-blade method is investigated for the preparation of Cu2ZnSnS4 films for low-cost solar cell application. Cu2ZnSnS4 precursor powder, the main raw material for the doctor-blade paste, is synthesized by a simple ball-milling process. The doctor-bladed Cu2ZnSnS4 films are annealed in N2 ambient under various conditions and characterized by X-ray diffraction, ultraviolent/vis spectrophotometry, scanning electron microscopy, and current-voltage (J-V) meansurement. Our experimental results indicate that (i) the X-ray diffraction peaks of the Cu2ZnSnS4 precursor powder each show a red shift of about 0.4°; (ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu2ZnSnS4, whereas an overlong annealing introduces defects; (iii) the band gap value of the doctor-bladed Cu2ZnSnS4 is around 1.41 eV; (iv) the short-circuit current density, the open-circuit voltage, the fill factor, and the efficiency of the best Cu2ZnSnS4 solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO2/In2S3/Cu2ZnSnS4/Mo are 7.82 mA/cm2, 240 mV, 0.29, and 0.55%, respectively.  相似文献   
3.
采用一种简易溶液法成功快速制备出低成本薄膜太阳能电池用Cu2ZnSnS4(CZTS)纳米晶。探讨合成温度和时间对CZTS纳米晶的结构、形貌、元素比例及光学特性的影响,实现可控的CZTS纳米晶合成。以上特性分别采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能量色散谱仪(EDX)、紫外-可见光谱仪(UV-vis)进行表征。结果表明:温度为250℃,时间为1 h时可获得锌黄锡矿结构,团聚颗粒约为200~500 nm,化学计量比约为Cu∶Zn∶Sn∶S=2.17∶1∶1.23∶4.69,禁带宽度为1.5 eV的纳米晶,适合印刷法制备CZTS薄膜太阳能电池吸收层。  相似文献   
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