A Free Boundary Problem for Some Modified Predator-Prey Model in a Higher Dimensional Environment

Applications of Mathematics - We focus on the free boundary problems for a Leslie-Gower predator-prey model with radial symmetry in a higher dimensional environment that is initially well populated...     

Instantaneous visual imaging of latent fingerprints in water

Science China Chemistry -     

Guest-assisted assembly strategy: boosting solvent-processed organic solar cells toward commercialization

Science China Chemistry -     

Consolidation of composite cathodes with NCM and sulfide solid-state electrolytes by hot pressing for all-solid-state Li metal batteries

Journal of Solid State Electrochemistry - In this study, hot pressing was evaluated as a method of cell fabrication to increase the energy density of next-generation all-solid-state batteries with...     

Normal approximation and fourth moment theorems for monochromatic triangles

Given a graph sequence denote by T₃(G_n) the number of monochromatic triangles in a uniformly random coloring of the vertices of G_n with colors. In this paper we prove a central limit theorem (CLT) for T₃(G_n) with explicit error rates, using a quantitative version of the martingale CLT. We then relate this error term to the well-known fourth-moment phenomenon, which, interestingly, holds only when the number of colors satisfies . We also show that the convergence of the fourth moment is necessary to obtain a Gaussian limit for any , which, together with the above result, implies that the fourth-moment condition characterizes the limiting normal distribution of T₃(G_n), whenever . Finally, to illustrate the promise of our approach, we include an alternative proof of the CLT for the number of monochromatic edges, which provides quantitative rates for the results obtained in [7].     

Terahertz Dual-Band Near-Zero Effective Index Metamaterial Based on Double-Sided Metal Microstructure

Journal of Russian Laser Research - The zero-refractive-index metamaterials have excellent electromagnetic properties, which provide new ideas and methods to realize the control of electromagnetic...     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

A composition-free parallel volume rendering method

Journal of Visualization - In the in situ visualization of large-scale simulation, if using the traditional sort-last parallel rendering method, the performance cannot be fully improved due to the...     

A visible light responsive molecularly imprinted photoelectrochemical sensor for the sensitive detection of BSA

Journal of Solid State Electrochemistry - A molecularly imprinted photoelectrochemical (PEC) cathodic sensor was developed for the detection of bovine serum albumin (BSA). The PEC sensor was...     

Coupled Variational Inequalities: Existence,Stability and Optimal Control

Journal of Optimization Theory and Applications - In this paper, we introduce and investigate a new kind of coupled systems, called coupled variational inequalities, which consist of two elliptic...