CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

Plasmon-induced absorption in stacked metamaterials based on phase retardation

In this paper, based on the constructive interference of plasmonic dipolar and quadrupolar modes, a classical analogue of electromagnetically induced absorption （EIA） is demonstrated theoretically in a stacked metamaterial consisting of a short metal strip （which acts as a bright resonator） and a long metal strip （acting as a dark resonator）, which has been reported to support the electromagnetically induced transparency （EIT） effect. The transition from EIA to EIT can be clearly observed in the absorbance spectra via varying the vertical spacing between two resonant oscillators. With the help of the coupled two-oscillator model, the phase shift between the bright and dark resonance modes is calculated by fitting the simulated absorbance spectra, which reveals the physical mechanisms behind constructive and destructive interference effects in EIT/EIA metamaterials.     

Activation cross-sections of titanium isotopes at neutron energies of 13.5–14.8 MeV

The cross-sections for ~(46) Ti(n,2 n)~(45) Ti, ~(46) Ti(n,p)~(46 m+g) Sc+~(47) Ti(n,d*)~(46 m+g) Sc, ~(46)Ti(n,p)~(46 m+g) Sc, ~(47) Ti(n,p)~(47) Sc+~(48) Ti(n,d*)~(47) Sc, ~(47) Ti(n,p)~(47) Sc, ~(48) Ti(n,p)~(48) Sc+~(49) Ti(n,d*)~(48) Sc,~(48) Ti(n,p)~(48) Sc, and ~(50) Ti(n,α)~(47) Ca reactions were investigated around neutron energies of 13.5–14.8 Me V by means of the activation technique. Fast neutrons were produced by the~3 H(d,n)~4 He reaction. Neutron energies from different directions in the measurements were obtained in advance using the method of cross-section ratios for ~(90) Zr(n,2 n)~(89 m+g) Zr and ~(93) Nb(n,2 n)~(92 m) Nb reactions. The results obtained are analyzed and compared with the experimental data provided by the literature and verified nuclear data in the JEFF-3.3,CENDL-3.1, ENDF/B-VIII.0 libraries, as well as results calculated by Talys-1.9 code.     

Exciton emissions of CdS nanowire array fabricated on Cd foil by the solvothermal method

Nanowires have recently attracted more attention because of their low-dimensional structure, tunable optical and electrical properties for next-generation nanoscale optoelectronic devices. Cd S nanowire array, which is(002)-orientation growth and approximately perpendicular to Cd foil substrate, has been fabricated by the solvothermal method. In the temperature-dependent photoluminescence, from short wavelength to long wavelength, four peaks can be ascribed to the emissions from the bandgap, the transition from the holes being bound to the donors or the electrons being bound to the acceptors, the transition from Cd interstitials to Cd vacancies, and the transition from S vacancies to the valence band,respectively. In the photoluminescence of 10 K, the emission originated from the bandgap appears in the form of multiple peaks. Two stronger peaks and five weaker peaks can be observed. The energy differences of the adjacent peaks are close to 38 me V, which is ascribed to the LO phonon energy of Cd S. For the multiple peaks of bandgap emission, from low energy to high energy, the first, second, and third peaks are contributed to the third-order, second-order, and first-order phonon replica of the free exciton A, respectively;the fourth peak is originated from the free exciton A;the fifth peak is contributed to the first-order phonon replica of the excitons bound to neutral donors;the sixth and seventh peaks are originated from the excitons bound to neutral donors and the light polarization parallel to the c axis of hexagonal Cd S, respectively.     

Description of the evolution of mixed-symmetry states in the N=78 isotonic chain with IBM2

The characteristics of the lowest mixed-symmetry states 2_ms⁺ and 1_ms⁺ for ¹³²Xe, ¹³⁴Ba and ¹³⁶Ce in the even-even N=78 isotones are investigated within the framework of the IBM2 model. The lowest mixed-symmetry state 2_ms⁺ levels for both a single isolated state in ¹³²Xe and ¹³⁶Ce and a fragmented state in ¹³⁴Ba are reproduced by the predictions. The agreement between the IBM2 calculation and the experimental values is good for the B(E2) and B(M1) transition probabilities both quantitatively and qualitatively. The predicted summed B(M1) strength follows the experimental data, remaining nearly constant as a function of proton number along the chain of the N=78 isotones.     

Description of the Structural Properties of Low-Lying States in ^102Ru with IBM2

We describe the properties of low-lying states of ^102Ru within the framework of the proton-neutron interacting model IBM2. The theoretical predictions of the ground state, quasi-γ and quasi-β bands, and the ratios of the B（E2） transition strengths are reproduced very well. The structural properties of ^102Ru are identified in the parameters space of the interacting boson model （IBM2）. The characteristic feature of the energy spectrum structure exhibits that ^102Ru is very close to the critical point of Uπv（5）-Oπv（6） transition and towards Uπv（5） symmetry. The key sensitive quantities of the B（E2） branching ratio clearly indicate that ^102Ru is a primary Oπv（6） symmetry, while with a somewhat Uπv（5） symmetry. It is possible that the shape coexistence persists in ^102Ru, whereas the evident fingerprint of the shape coexistence has not been observed.