基于锥形渐变耦合结构的可扩展多模弯曲波导EI北大核心CSCD

提出了一种基于锥形渐变耦合结构的可扩展多模弯曲波导。该器件利用模式等效折射率匹配原理,通过对称的锥形渐变耦合结构,实现高阶模式与基模的相互转化,完成多模弯曲传输功能。同时,结合时域有限差分方法和粒子群优化算法,优化锥形渐变耦合结构区域,提升器件性能。实验测试结果表明,在1520~1600 nm的波长范围内,当输入模式分别为TE_0、TE_1、TE_2、TE_(3)和TE_(4)时,该器件的插入损耗分别小于1.71 dB、3.04 dB、2.90 dB、3.16 dB和4.00 dB,对应的串扰分别小于-10.60 dB、-11.35 dB、-10.92 dB、-10.35 dB和-11.45 dB。     

基于石墨烯表面等离子激元波导的同或/异或门

设计了一种基于石墨烯表面等离子激元波导的同或/异或逻辑门,其采用了上下话路型微环谐振器为基本单元。通过调节石墨烯化学势来控制石墨烯表面等离子激元的传输状态,器件的两个不同输出端口同时获得同或和异或逻辑运算结果。仿真分析结果表明:当工作频率为30THz,石墨烯化学势为0.677eV和0.95eV时,基于石墨烯表面等离子激元波导的上下话路型微环谐振器可实现开启与关闭;所构建的同或/异或逻辑门在‘00’、‘01’、‘10’、‘11’四组逻辑操作数下的最差串扰为-10.60dB。     

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

基于IPSO的风光高渗透电网抽水蓄能电站容量优化

针对现有的抽水蓄能电站容量优化方法较多忽略其较大的电能时空转移效益与增强系统调峰能力效益,文章在构建抽水蓄能电站提升新能源发电并网消纳能力提升的充放电数学模型的基础上,进一步综合考虑电站的电量效益、电能时空转移效益、环境效益、调峰效益以及电站的初始投建成本、运维成本与废弃电站处理成本,构建抽水蓄能电站容量优化数学模型,并采用改进的粒子优化群算法(Improved Particle Swarm Organization,IPSO)对模型进行求解.最后,以新疆某含大规模风电与光伏发电的区域电网运行数据为背景,仿真验证了本文所提出方法的正确性与有效性.     

Kink effect in current-voltage characteristics of a GaN-based high electron mobility transistor with an AIGaN back barrier

The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

AlGaN/GaN高电子迁移率晶体管中kink效应的半经验模型

初步分析了AlGaN/GaN 器件上的kink效应. 在直流模型的基础上, 建立了AlGaN/GaN 高电子迁移率晶体管中kink效应的半经验模型, 并加入了kink效应发生的漏源偏压与栅源偏压的关系. 该模型得出较为准确的模拟结果, 可用来判断kink效应的发生和电流的变化量. 最后, 我们采用模型仿真结合实验分析的方法, 对kink效应进行了一定的物理研究, 结果表明碰撞电离对kink效应的发生有一定的促进作用.     

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors(HEMTs)fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability.It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress.The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process.By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions,a good agreement is observed.It provides direct experimental evidence to support the impact ionization physical model,in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore,our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress,and the ionized fluorine ions cannot recapture the electrons.     

Time-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistorsTime-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistors

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in A1GaN/GaN high electron mobility transistors （HEMTs） submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.