硫属铅化合物PbE(E=Te,Se)微晶的元素溶剂热反应合成与表征

以元素单质Pb片,Te粉,Se粉为原料,乙二胺为螯合剂,采用元素溶剂热反应合成出不同形貌的PbE(E=Te,Se)微晶.对所得反应物进行了X射线衍射分析,透射电镜(TEM)与扫描电镜(SEM)的分析,光致荧光光谱的表征.分析了反应条件对合成PbE(E=Te,Se)微晶的影响,讨论了其反应过程及机理.结果表明当反应温度为180℃时,反应12h可获得高度结晶的树枝状PbTe微晶以及立方状PbSe微晶.     

Pd/CuO-Ce_(0.5)Mn_(0.5)O_2催化氧化合成葡萄糖醛酸及其内酯

用柠檬酸络合法制备了掺杂铈锰复合金属氧化物载体,采用沉淀法负载活性组分钯得到催化剂Pd/CuO-Ce0.5Mn0.5O2,用XRD、SEM和XPS对催化剂结构进行了表征分析,考察了不同CuO掺入量对葡甲苷的伯羟基选择氧化合成葡萄糖醛酸及其内酯的催化活性的影响。结果表明,CuO的掺入对载体的孔结构及活性组分在载体表面的分散都得到了不同程度的改善;Ce-Cu-Mn的协同作用有利于提高Pd的氧化还原性能。当CuO添加量为9%及Pd负载量为0.5%时,葡萄糖醛酸及其内酯的总收率可达70%。     

Band Structures of Ultrathin Bi(110) Films on Black Phosphorus Substrates Using Angle-Resolved Photoemission Spectroscopy

The band structures of two-monolayer Bi(110) films on black phosphorus substrates are studied using angleresolved photoemission spectroscopy. Within the band gap of bulk black phosphorus, the electronic states near the Fermi level are dominated by the Bi(110) film. The band dispersions revealed by our data suggest that the orientation of the Bi(110) film is aligned with the black phosphorus substrate. The electronic structures of the Bi(110) film strongly deviate from the band calculations of the free-standing Bi(110) film, suggesting that the substrate can significantly affect the electronic states in the Bi(110) film. Our data show that there are no non-trivial electronic states in Bi(110) films grown on black phosphorus substrates.     

准SU(1,1)相干态的亚泊松分布特性

数值计算显示准SU(1,1)相干态呈亚泊松分布,这是没有经典对应的量子特性.     

Designing high k dielectric films with LiPON—Al2O3 hybrid structure by atomic layer deposition

A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things, which demand relatively low frequency response. Here, atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the LiPON-Al₂O₃ hybrid structure. The LiPON thin film is periodically stacked in the Al₂O₃ matrix. This hybrid structure presents a frequency-dependent dielectric constant, of which k is significantly higher than the aluminum oxide matrix from 1 kHz to 200 kHz in frequency. The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field, which shows an additional polarization to the Al₂O₃ matrix. This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.