外围缩合四个1,10-啡啰啉单元的新氮杂酞菁的表面光伏响应及电场作用研究

通过电场诱导表面光电压谱确定外围缩合4个1,10-啡啉单元的氮杂酞菁为p型有机半导体,并对各个谱带进行合理的归属.结果发现,Soret带长波侧光电压曲线在电场作用下轻微蓝移,根据电场对高极化度n轨道基态的影响,将其归属为n-π^*     

纵向耦合对垂直腔面发射激光器的影响

考虑到垂直腔面发射激光器中的光子与载流子的纵向耦合,在行波速率方程中引入了纵向耦合因子。利用这个速率方程,讨论了阀值电流与量子阱数目的关系,计算结果表明光子与载流子的纵向耦合是不容忽视的。给出了阀值电流表达式,它表明纵向耦合因子越大,阀值电流越低。     

ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition （MOCVD） technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap （7. 7eV） and high dielectric constant （9.8）. The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69cm^2V^-1s^-1 and - 1 × 10^4, respectively.     

光子晶体光纤的基模分析

简化了光子晶体光纤的模式计算公式，计算了六角晶格光子晶体光纤的色散关系，对不同空气柱半径的色散作了比较，发现随着空气柱半径的增加，模式折射率变小，波导模式色散的零色散点向长波方向移动。     

氮杂酞菁铜aza-CuPc的合成与晶体结构

本文报道在固相条件下合成氮杂酞菁铜原料, 借助同步辐射光源进行单晶结构测试, 通过物理方法获得了其单晶结构数据.     

A Novel GaAs／InGaAs／AlGaAs Structure of Modulation—Doped Field—Effect Transistors with High Transconductances

Novel structure GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors (MODFETs) with a buried p-i-n dipole layer and a 200 nm buffer layer have been fabricated.According to the calculation,the dipole buried layer not only results in the very thin buffer layer required,but also enhances the density of two-dimensional electron gas.The measured transconductances of these MODFETs,with a gate length of 2μm and a drain-source spacing of 5μm,are as high as 320mS/mm and the measured maximum drain currents of the typical devices are higher than 500mA/mm.     

基于红外光谱技术的混合气体检测系统概述

为了给从事红外混合气体检测领域的研究人员提供一定的借鉴与参考,针对红外混合气体检测系统中的光学复用结构以及检测方法进行了详细评述。目前,以量子级联激光器(QCL)、带间级联激光器(ICL)为代表的相干光源已逐渐取代热辐射红外光源、红外发光二极管(LED)等传统非相干光源,成为红外混合气体检测中的主流光源。相应地,具有超高探测度和极短响应时间的红外光探测器也逐渐超越以往的红外热探测器,占据红外探测器领域的主导地位。基于“复用思想”的光学复用结构则是红外混合气体检测系统的核心,主要包括单光源复用检测结构和多光源复用检测结构。其中,单光源复用检测结构以其体积小、集成度高等优点成为构建便携式混合气体检测系统的重要选择;而多光源复用检测结构是时分复用、频分复用、波分复用等思想的具体化,并凭借其较宽的光谱覆盖范围、较高的光谱分辨率等优势成为当前混合气体检测系统中的主导结构。应用于红外混合气体检测的检测方法主要有非分光红外(NDIR)光谱技术、波长/频率调制光谱技术、腔增强光谱技术以及光声光谱技术等。研究人员可通过对红外混合气体检测系统各组成部分充分了解后,设计出实用的红外混合气体检测系统,对工农业生产、环境监测、生命科学等诸多领域都具有重要意义。     

Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric

We fabricate organic thin films using the copolymer of methyl methacrylate and glycidyl methacrylate （PMMA- GMA） as a gate dielectric with a simple top-contact structure. Copper phthalocyanine （CuPc） TFTs are fabricated and the influences of annealing on the performance are studied. The mobilities increase from 2.5 × 10^3 cm^2/Vs to 4.2 × 10^3 cm^2/Vs and threshold voltages decrease from -18 V to -10 V after annealing. The good performances of the devices approach those obtained with inorganic gate dielectric materials such as silicon dioxide under the same technical conditions. It is fully proven that PMMA-GMA is a competitive candidate as an excellent gate insulation layer.     

等离子MOCVD系统生长ZnO薄膜掺N2和掺NH3特性比较

利用MOCVD方法生长了高质量的ZnO薄膜材料,分别通过N2和NH3对c面和R面蓝宝石衬底上生长的ZnO薄膜材料进行了掺杂行为研究.掺N2时,X射线衍射半峰全宽仅为0.148°,室温光荧光发光峰位于3.29eV,半峰全宽～100meV,电阻率由0.65 Ω·cm增大到5×l04Ω·cm.掺NH3时,X射线衍射峰半峰全宽0.50°,样品为弱p型,电阻率为102Ω·cm,载流子浓度为1.69×1016 cm-3.同时我们还观察到弱p型材料很容易退化成n型高阻材料.