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Haotian Jiang 《中国物理 B》2022,31(4):48102-048102
Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.  相似文献   
2.
通过电场诱导表面光电压谱确定外围缩合4个1,10-啡啉单元的氮杂酞菁为p型有机半导体,并对各个谱带进行合理的归属.结果发现,Soret带长波侧光电压曲线在电场作用下轻微蓝移,根据电场对高极化度n轨道基态的影响,将其归属为n-π*  相似文献   
3.
ZnO纳米粒子结构对光电量子限域特性的影响   总被引:7,自引:0,他引:7  
Zn O作为一种宽禁带 (3 .3 6e V)高激子结合能 (60 me V)的半导体材料已引起人们的关注 .Zn O纳米粒子的比表面积较大 ,表面活性较高 ,对周围环境敏感 ,使其成为传感器制作中最有前途的材料[1] ,还在太阳能转换[2 ] 、发光材料[3] 、半导体表面修饰与敏化[4 ] 、纳米电子学以及分子电子学器件[5] 等领域显示出广阔的应用前景 .制约这些应用的关键是 Zn O纳米粒子表面和界面的电子结构和电荷转移行为 ,但有关此方面的报道较少 .本文用溶胶 -凝胶法制备了不同粒径的 Zn O纳米粒子 ,应用表面光电压谱 (SPS)和场诱导表面光电压谱 (FISPS…  相似文献   
4.
利用场诱导光电压谱(简称FISPS)和瞬态光伏(简称TPV)技术研究了TiO2的光生电荷的产生和传输机制.发现光生电荷在体块TiO2上的迁移机制不同于在纳米TiO2上的迁移机制,也不同于在结界面空间电荷区的迁移机制. 400 ℃处理的TiO2颗粒表面具有大量的表面态,光生电荷被表面态捕获-释放机制控制着光伏行为的过程是慢过程. 800 ℃处理的TiO2已经形成了完整的能带结构,光伏响应除了表现带-带跃迁外,还有一个在带边的自由激子带,光生电荷被表面自建场驱动进行传递的过程是快过程. 600 ℃处理的TiO2混晶由锐钛矿型和金红石型两种构型组成,在两相之间存在着较低势垒的结界面.它的光伏响应受控于两种机制 :光生电荷在两相间结界面空间电荷区的传输和在表面自建场驱动下的传输.当激发光强较小时,界面空间电荷区的光生电子由于积累的浓度较小而不能隧穿过结界面,这种场助隧穿只有在外场作用下才能发生.  相似文献   
5.
Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga_(0.75)In_(0.25)As_(0.49)Sb_(0.51) nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation,these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm(0.636 e V). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region(980 nm) with the external quantum efficiency of 2.0 × 10~4% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.  相似文献   
6.
To use a newly developed wavelength modulation surface plasmon resonance (SPR) biosensor, an experimental protocol was developed to investigate the interaction of ginsenosides with serum albumin. With a known concentration of the ginsenosides, bound percentages of the ginsenosides with human serum albumin (HSA) or bovine serum albumin (BSA) were obtained. SPR technique could require no labeling and this method provided the detailed information on association and disassociation of molecules in real time. The results indicate that the sensitivity of wavelength modulation SPR biosensor is sufficient for detection and characterization of binding events involving low-molecular weight compounds and their immobilized protein targets.  相似文献   
7.
表面与界面电荷性质是纳米材料制备及其应用中应该考虑的重要问题. 详细了解纳米材料的尺寸与表面电荷性质之间的关系是纳米科学研究中的重要课题. TiO2作为一种宽带隙的半导体材料, 因其具有显著的光电响应、良好的化学稳定性和绿色环保性, 在太阳能转换、光催化杀菌及污染处理等方面有着广泛的用途[1~5].  相似文献   
8.
利用瞬态光电压技术对光生电荷在纳米TiO2 薄膜电极中的传输机理进行了研究. 结果表明光生电荷在纳米TiO2薄膜的体相和TiO2/ITO界面分别以扩散和漂移进行分离传输的. 并且对光生电子在TiO2/ITO界面的俘获对光电压响应产生显著的影响. 这是由于在TiO2/ITO界面存在界面势垒,且带弯是从TiO2指向ITO向下弯曲. 同时也表明瞬态光电压是一种很好的表征光电功能材料的光电性质的方法.  相似文献   
9.
利用化学气相沉积法制备了直径约90 nm,长数十微米的高质量TiO2纳米线.通过化学浴沉积法(CBD)在纳米线表面生长CdS包覆层,形成了一维TiO2@CdS核壳结构.不同包覆层厚度的一维TiO2@CdS核壳结构拉曼光谱研究发现TiO2/CdS界面的光生电荷转移对CdS和TiO2拉曼响应均有增强效应.结合表面光电压谱研究发现表面包覆层的厚度对TiO2/CdS界面光生电荷转移有显著的影响.表面CdS包覆层厚度对拉曼和表面光伏响应影响的研究表明电子在CdS包覆层中的电子扩散距离在30~60 nm.  相似文献   
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