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本文报道在固相条件下合成氮杂酞菁铜原料, 借助同步辐射光源进行单晶结构测试, 通过物理方法获得了其单晶结构数据. 相似文献
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We fabricate organic thin films using the copolymer of methyl methacrylate and glycidyl methacrylate (PMMA- GMA) as a gate dielectric with a simple top-contact structure. Copper phthalocyanine (CuPc) TFTs are fabricated and the influences of annealing on the performance are studied. The mobilities increase from 2.5 × 10^3 cm^2/Vs to 4.2 × 10^3 cm^2/Vs and threshold voltages decrease from -18 V to -10 V after annealing. The good performances of the devices approach those obtained with inorganic gate dielectric materials such as silicon dioxide under the same technical conditions. It is fully proven that PMMA-GMA is a competitive candidate as an excellent gate insulation layer. 相似文献
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We report on the fabrication and characterization of phototransistors based on AIGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/ram, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362nm. 相似文献
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