排序方式: 共有21条查询结果,搜索用时 187 毫秒
1.
A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching.The- oretically,tolerances of width,length,and port distance are more than 1,100,and 1μm,respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55μm.The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB. 相似文献
2.
3.
光纤Bragg光栅热敏力敏效应研究及应用探讨 总被引:6,自引:1,他引:5
本文报道了光纤Bragg光栅热敏力敏效应的实验研究结果,测量所得的光纤Bragg光栅温度系数和应力系数分别为6.84×10-6/℃和7.27×10-6/gf,与理论值6.85×10-6/℃和7.32×10-6/gf符合得很好.在20~180℃和0~50gf的温度应力测量范围内,光纤Bragg光栅透射谱中心波长移动量同温度应力具有良好的线性关系.基于光纤Bragg光栅的热敏力敏效应,本文还讨论了光纤Bragg光栅温度应变传感器实用化时必须首先考虑的一些关键问题. 相似文献
4.
相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图.
关键词:
电光调制器
绝缘体上的硅
微环谐振腔
载流子色散效应 相似文献
5.
本文设计并制作了基于强限制多模干涉耦合器的2×2 SOI马赫-曾德热光开关.这种光开关采用了深刻蚀结构的多模干涉耦合器和输入/输出波导,较大地提高了干涉耦合器的性能并减少了连接耦合损耗.同时,在调制臂区域采用浅刻蚀结构,保持其单模调制状态.深刻蚀多模干涉耦合器具有优越的特性,在实验中测得不均衡度只有0.03 dB,插入损耗-0.6 dB.基于这种耦合器的新型热光开关,其插入损耗为-6.8 dB,其中包括光纤-波导耦合损耗-4.3 dB,开关时间为6.8 μs. 相似文献
6.
7.
8.
Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator 下载免费PDF全文
A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.SdB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40μm is demonstrated as well. 相似文献
9.
A 2× 2 electro-optic switch is experimentally demonstrated
using the optical structure of a Mach--Zehnder interferometer (MZI) based
on a submicron rib waveguide and the electrical structure of a PIN diode on
silicon-on-insulator (SOI). The switch behaviour is achieved through
the plasma dispersion effect of silicon. The device has a modulation arm
of 1~mm in length and cross-section of 400~nm× 340~nm. The
measurement results show that the switch has a VπLπ
figure of merit of 0.145~V\cdot cm and the extinction ratios of two
output ports and cross talk are 40~dB, 28~dB and -28~dB,
respectively. A 3~dB modulation bandwidth of 90~MHz and a switch
time of 6.8~ns for the rise edge and 2.7~ns for the fall edge are also
demonstrated. 相似文献
10.