GaN HEMT器件结构的研究进展

Ga N高电子迁移率晶体管(HEMT)具有大的禁带宽度、高电子饱和速度、异质结界面的高二维电子气浓度、高击穿电压以及高的热导率,这一系列特性使它在高频、高功率、高温等领域得到了广泛的认可。本文首先论述了制约氮化镓高电子迁移率晶体管器件性能提高所遇到的问题及解决方法;然后,着重从优化材料结构设计和器件结构设计的角度,阐述了氮化镓高电子迁移率晶体管器件在高频高功率领域的最新研究进展;最后,讨论了器件进一步发展的方向。     

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.     

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.     

不完全相反转乳化过程分散相水滴形态发展研究

相反转乳化技术是制备高分子树脂水基分散体系的新方法[1～4].相反转指多组分体系(如油/水/乳化剂)中的连续相在一定条件下相互转化的过程,如在油/水/乳化剂体系中,其连续相由水相向油相(或从油相变为水相)的转变.在连续相转变区,体系的界面张力最低,因而分散相的尺寸最小.同理,可利用相反转技术直接将高分子树脂乳化为尺寸很小的水基微粒,即制备高分子树脂的水基分散体系.由于高分子树脂的粘弹性及相反转过程的复杂性,对高分子树脂的相反转乳化过程的机理研究较少.杨振忠[5]等通过调节高分子非离子型乳化剂浓度,可以有效地控制相反转完善程…     

人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响

对GaN基蓝光发光二极管(LED)分别施加-400,-800,-1 200,-1 500 V的反向人体模式静电打击,每次静电打击后,测量LED样品电学参数和光学参数的变化,从理论上分析了静电对LED可靠性的影响。实验发现:对GaN基蓝光LED进行人体模式下的静电打击后,其I-V特性曲线发生变形,光通量减小,老化时性能衰减的速率加快,这是由于受静电打击后在LED芯片内部产生了二次缺陷和熔融通道。对LED在不同温度下进行了I-V特性曲线的测量。实验结论认为未受静电打击的LED中浅能级离化占主导地位,受静电打击的LED中深能级离化占主导地位。静电引起的失效机理可以概述为二次缺陷和熔融通道的产生、深浅能级载流子的运动和辐射复合、非辐射复合之间的转变等因素引起的LED性能退化。     

顶空气相色谱-质谱联用法分析粪便中挥发性脂肪酸

建立了一种快速分析粪便中挥发性脂肪酸(Volatile fatty acids,VFAs)的顶空气相色谱-质谱联用法(Headspace gas chromatography-mass spectrometry,HS-GC/MS)。粪便样品用6%H3PO4溶液按1∶2(m/V)混悬后密封于顶空进样瓶中,直接进行HS-GC/MS检测。顶空振荡室加热温度为80℃,振荡加热时间30 min,顶空进样针温度为80℃,不分流进样1 mL;采用DB-FFAP毛细管柱(30 m×0.25 mm×0.25μm),进样口温度为250℃,升温程序(初始温度50℃保持1 min,以10℃/min升至200℃),载气(高纯氦)流速为1.0 mL/min;使用电子轰击(Electron impact,EI)离子源,电子能量为-70 eV,离子源温度为250℃,传输线温度为280℃,电子倍增器电压为0.95 kV,全扫描模式,扫描范围m/z 33~200。结果表明,本方法能够应用于人及大鼠粪便中挥发性脂肪酸的分析,通过NIST标准谱库检索,采用对照品比对以及质谱数据解析的方法,在人的粪便样品中检测到9种挥发性脂肪酸:乙酸、丙酸、异丁酸、丁酸、异戊酸、戊酸、异己酸、己酸、庚酸;在大鼠粪便中检测到8种挥发性脂肪酸:乙酸、丙酸、异丁酸、丁酸、异戊酸、戊酸、己酸、庚酸。通过峰面积归一化法,计算得到乙酸、丙酸、丁酸的相对百分含量约占挥发性脂肪酸总量的85%。本方法简单、灵敏,可用于人和大鼠粪便中挥发性脂肪酸的快速检测。     

不同形状的电流阻挡层对GaN基LED光效的影响

电流阻挡层(CBL)可以改善发光二极管(LED)的发光效率和输出光功率,其形状对电流的阻挡作用有影响。本文通过等离子体增强化学气相沉积设备(PECVD)在InGaN/GaN多量子阱外延片上制备了SiO2薄膜,并腐蚀出不同结构作为电流阻挡层:A组形状与P电极形状相同,B组为Y形CBL,C组为点状CBL。通过对这3组芯片与常规芯片的对比,发现加入CBL对小功率LED的电压特性影响比较小,并且电流阻挡层形状与金属电极形状相同时对光效的提高最大,可以提高14.6%。     

气相色谱-质谱法测定轨道交通塑料产品中18种有害物质

建立气相色谱–质谱联用检测轨道交通塑料产品中的18种有毒有害物质的方法。用甲苯超声萃取60 min,选用DB–5HT(15 m×0.25 mm, 0.1μm)色谱柱,气相色谱–质谱法对样品进行检测。在优化的分析条件下,18种待测物质于20 min内获得对称的色谱峰,分离效果良好。待测物质的线性范围为0.5～4.5 mg/L,线性相关系数均在0.999以上,检出限达到0.5 mg/L,测定结果的相对标准偏差小于7%(n=6),样品加标回收率为85.3%～107.9%。该测试方法方便快速,测试结果准确、可靠,可以满足轨道交通塑料产品中多种有害物质的测定要求。     

AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact

In this paper a novel A1GalnP thin-film light-emitting diode （LED） with omni-directionally reflector （ODR） and transparent conducting indium tin oxide （ITO） n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films （95 nm） deposited on n- ohmic contact of ODR-LED is of the order 23.5Ω/△ with up to 90% transmittance （above 92% for 590-770 nm） in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO （peak wavelength 620 nm） could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.[第一段]     

利用介质光子晶体提高红光发光二极管的光通量的研究

本文利用光子晶体的光栅衍射原理, 在发光二极管(light emitting diode, LED)上制作了光子晶体结构以提高出光效率. 在红光LED器件中引入了SiO₂层的介质光子晶体结构, 并进行了相应的理论分析和实验验证. 结果表明: 介质光子晶体结构对于提高红光LED器件的光提取效率有显著效果, 引入介质光子晶体后, 红光LED的光通量比普通LED增加了26%.