Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

We demonstrated the improved performance of near UV (365 nm) InGaN/AlGaN-based LEDs using highly reflective Al-based p-type reflectors with graphene sheets as a diffusion barrier. The use of graphene sheets did not degrade the reflectance of ITO/Al contacts, viz. ∼81% at 365 nm. The ITO/graphene/Al contacts annealed at 300 °C exhibited better ohmic behavior with a specific contact resistance of 1.5 × 10⁻³ Ωcm² than the ITO/Al contact (with 9.5 × 10⁻³ Ωcm²). Near UV LEDs fabricated with the ITO/graphene/Al contact annealed at 300 °C showed a 7.2% higher light output (at 0.1 W) than LEDs with the ITO/Al reflector annealed at 300 °C. The SIMS results exhibited that, unlike the ITO/graphene/Al, the ITO/Al contacts undergo a significant indiffusion of Al atoms toward the GaN after annealing. Furthermore, both Ga and Mg atoms were also more extensively outdiffused in the ITO/Al contacts after annealing. On the basis of the SIMS and electrical results, the possible explanations for the annealing-induced degradation of the ITO/Al contacts are described and discussed.     

Improved device performance in nonpolar a ‐plane GaN LEDs using a Ni/Al/Ni/Au n‐type ohmic contact

The authors report upon the increased light‐output power (P_out) via a reduction in the forward voltage (V_f) for nonpolar a ‐plane GaN LEDs using Ni/Al/Ni/Au n‐type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10^–5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10^–4 Ω cm², after annealing at 700 °C. The X‐ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V_f of the nonpolar LEDs decreases by 10% and P_out increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Reduction of the contact resistance in copper phthalocyanine thin film transistor with UV/ozone treated Au electrodes

Bottom-contact (BC) copper phthalocyanine (CuPc) thin film transistor with UV/ozone treated Au as a source/drain electrode was fabricated and the contact resistance was estimated from the transmission line method (TLM). Comparing the properties of OTFT with untreated Au electrode, the performance of the BC CuPc-TFT with the UV/ozone treated Au electrodes was significantly improved: saturation mobility increased from 4.69 × 10⁻³ to 2.37 × 10⁻² cm²/V s, threshold voltage reduced from −29.1 to −6.4 V, and threshold swing varied from 5.08 to 2.25 V/decade. The contact resistance of the device with UV/ozone treated Au electrodes was nearly 20 times smaller than that of the device with untreated Au electrodes at the gate voltage of −20 V. This result indicated that using the UV/ozone treated Au electrode is an effective method to reduce the contact resistance. The present BC configuration with UV/ozone treated Au electrodes could be a significant step towards the commercialization of OTFT technology.     

Polarisation resistance of the O2, Au/O2− and H2-H2O, Au/O2− electrode systems

Gold electrodes with known contact geometries were studied using impedance spectroscopy. From these data it was possible to determine the specific polarisation conductivity per unit length of three-phase boundary (TPB). The values were found to be (3÷22)×10⁻⁴ S·cm⁻¹ dependent on the electrode history in pure oxygen at 977 °C and 2×10⁻⁶ S·cm⁻¹ at 977 °C in “pure” hydrogen (P_O2=10⁻²⁰ atm at 1001 °C). The results are compared with previous data obtained for platinum electrodes.     

Polarisation conductivity of the O2,Pt/Zr(Y)O2 and H2-H2O, Pt/Zr(Y)O2 electrodes

Pt electrodes with defined contact geometries were studied by using impedance spectroscopy. The specific polarisation conductivity per unit length of the three-phase boundary was determined. It is found to be 1 × 10⁻⁴ S·cm⁻¹ at 977 °C in an atmosphere of “pure” hydrogen with an oxygen partial pressure of 10⁻²⁰ atm at 1000 °C. Investigations carried out in an atmosphere of pure oxygen revealed a pronounced dependence of the polarisation conductivity on the electrode history. The polarisation conductivity was found to be in a range of 2 × 10⁻⁴ to 6.5 × 10⁻⁴ S·cm⁻¹ at a temperature of 977 °C. It was possible to estimate the area of the electrolyte surface which takes part in the electrode reaction. The real exchange current density was determined.     

Fabrication of 6,13‐bis(triisopropyl‐silylethynyl)–pentacene thin‐film transistors with the silver ink transfer method using a polymer stamp

We fabricated 6,13‐bis(triisopropylsilylethynyl)–pentacene (TIPS–pentacene) thin film transistors using a direct metal transfer method. Using different metals, such as Au and Ag ink, electrode patterns are formed from the relief region of the polymer mold. TIPS–pentacene TFTs using the Ag ink transfer method show a similar performance to those using the Au metal transfer method. This method has advantages over the Au metal transfer method because it does not require vacuum equipment and a dry etching process. The self‐assembled monolayer (SAM) treated device exhibits a carrier mobility of 9.5 × 10^–2 cm²/V · s, and an on/off ratio of 4.6 × 10⁴. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

ITO界面调制层对GZO电极LED器件性能的影响

采用磁控溅射制备GZO和具有ITO界面调控层的GZO(ITO/GZO)透明导电薄膜作为大功率LED的电流扩散层,对比研究界面调控层对LED器件性能的影响。研究结果表明,ITO/GZO薄膜的透过率在可见光区达80%以上,退火后的ITO/GZO薄膜有较低的电阻率(1.15×10^-3 Ω·cm)。ITO调控层的介入能够调制GZO表面粗糙度,有利于改善LED外量子效率,降低GZO/p-GaN界面的接触势垒,提高LED器件的光电性 能。通过ITO界面调控后,LED器件20 mA驱动电流下的工作电压从9.5 V降低为6.8 V,发光强度从245 mcd 升到297 mcd,提高了20%;驱动电流为35 mA时,其发光强度从340.5 mcd 升到511 mcd,提高了50%。     

基于氧化铟锡的无结低电压薄膜晶体管

在室温下制备了基于氧化铟锡(ITO)的底栅结构无结薄膜晶体管. 源漏电极和沟道层都是同样的ITO薄膜材料,没有形成传统的源极结和漏极结, 因而极大的简化了制备流程,降低了工艺成本.使用具有大电容的双电荷层SiO₂作为栅介质, 发现当ITO沟道层的厚度降到约20 nm时, 器件的栅极电压可以很好的调控源漏电流. 这些无结薄膜晶体管具有良好的器件性能: 低工作电压(1.5 V), 小亚阈值摆幅(0.13 V/dec)、 高迁移率(21.56 cm²/V·s)和大开关电流比(1.3× 10⁶). 这些器件即使直接在大气环境中放置4个月, 器件性能也没有明显恶化:亚阈值摆幅保持为0.13 V/dec,迁移率略微下降至18.99 cm²/V·s,开关电流比依然大于10⁶.这种工作电压低、工艺简单、 性能稳定的无结低电压薄膜晶体管非常有希望应用于低能耗便携式电子产品以及新型传感器领域.     

Influence of polarity inversion on the electrical properties of Ga‐doped ZnO thin films

This study investigates how polarity inversion influences the relationship between the electrical properties of heavily Ga‐doped ZnO (GZO) films deposited by RF magnetron sputtering and their thickness. The electrical properties observed in very thin films are correlated with a change of polarity from O‐polar to Zn‐polar face upon increasing the film thickness based on results of valence band spectra measured by X‐ray photoelectron spectroscopy. It is found that the electrical properties of very thin GZO films deposited on Zn‐polar ZnO templates are significantly improved compared to those deposited on O‐polar face. A low resistivity of 2.62 × 10^–4 Ω cm, high Hall mobility of 26.9 cm²/V s, and high carrier concentration of 8.87 × 10²⁰ cm^–3 being achieved with 30 nm‐thick GZO films using Zn‐polar ZnO templates on a glass substrate. In contrast, the resistivity of 30 nm‐thick GZO films on bare glass that shows more likely O‐polar is very poor about 1.44 × 10^–3 Ω cm with mobility and carrier concentration are only 11.9 cm²/V s and 3.64 × 10²⁰ cm^–3, respectively. It is therefore proposed that polarity inversion plays an important role in determining the electrical properties of extremely thin GZO films. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer

In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC = 28.6 mA(J C = 183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance(Rsp-on) is32.3mΩ·cm 2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7×10-3 Ω·cm2 and 150 /,respectively.     

有机薄膜晶体管中接触效应的研究

研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以M_OO₃修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μ_ef达到0.42 cm²/V ·s,阈值电压V_T为-9.16 V,开关比4.7×10³.通过中间探针法,对器件电势分布做了定性判断 关键词： 有机薄膜晶体管 场效应迁移率 接触效应 电荷漂移     

高分子发光二极管载流子注入过程研究

采用交流阻抗谱，电容-电压，电容-频率等实验方法，研究了共轭高分子MEH-PPV(poly［2-methoxy，5-(2-ethylhexoxy)-1，4-phenylene vinylene］)发光二极管的载流子注入过程.对于结构为ITO/PEDOT/MEH-PPV/Ba/Al的发光器件，实验结果表明，电极界面是欧姆接触的，载流子的注入是非平衡的，器件薄膜中存在陷阱容易俘获注入电荷，形成空间电荷区，陷阱密度约为3.75×10¹⁶cm^-3. 关键词： 高分子发光二极管 交流阻抗谱 cole-cole图 载流子注入     

Der Einfluß des Kontaktes auf die durchα-Teilchen induzierten Stromimpulse in Cadmiumsulfid-Kristallen

The effect of the electrode contact on pulses induced byα-particles in single crystals of CdS grown by theFrerichs method was investigated to ascertain whether such crystals are suitable as particle counters. Thin, transparent metal electrodes were prepared on both sides of the crystals at room temperature, or above, by vacuum evaporation after surface cleaning by glow discharge. Crystals with Ohmic contacts (In, Ce) showed space charge limited pulse currents; the rise time of these pulses was longer than the dielectric relaxation time. When a thin sheet of an insulating material was interposed between crystal and electrode, polarization caused pulse amplitude to decrease very rapidly. It follows from the results that the polarizing charge is located at the electrodes. Saturation pulses were obtained with Cr, Mn and Au electrodes deposited on crystals at higher temperatures. Measured photovoltaic effects confirmed the existence of a surface-barrier potential at the electrodes. An energy resolution of about 20% forα-particles of 4·8 MeV was obtained for a crystal with Au electrodes. In regard to the charge carried by holes, the amount of energy required to produce an electron-hole pair was determined to 7·25±1·2 eV. The mobility range of the holes was estimated to be 2≦μ≦8 cm²/ Vsec. These results show that a CdS crystal can only be used as anα-particle detector with good time and energy resolution if there is a potential barrier immediately under the electrode.     

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Low metal-graphene contact resistance is important in making high-performance graphene devices.In this work,we demonstrate a lower specific contact resistivity of Au_(0.88)Ge_(0.12)/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts.The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance.Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance.The specific contact resistivity decreases from 2.5 × 10~(-4) to 7.8 × 10~(-5) Ω·cm~2 by pre-annealing at 300 ℃ for one hour,and continues to decrease to9.5 × 10~(-7) H·cm~2 after post-annealing at 490 ℃ for 60 seconds.These approaches provide reliable means of lowering contact resistance.     

玻碳电极上ABTS的电化学行为

通过循环伏安法和旋转圆盘电极装置研究了2,2′-偶氮-双-(3-乙基苯并噻唑啉-6-磺酸)二铵盐(ABTS),ABTS^2-和ABTS^·-氧化还原对在pH=4.4的磷酸缓冲溶液中和玻碳电极上的电化学和传质行为. 由不同转速下记录的i-E曲线, 得到在磷酸缓冲溶液的电极反应速率常数和传递系数以及ABTS^2-的扩散系数分别为4.6×10^-3 cm/s、0.28和4.4×10^-6 cm^{2相似文献}   

High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.     

AlGaN/AlN/GaN结构中二维电子气的输运特性

对使用金属有机物汽相沉积法生长的AlGaN/AlN/GaN结构进行的变温霍尔测量，测量结果指出在AlN/GaN界面处有二维电子气存在且迁移率和浓度在2K时分别达到了1.4×10⁴cm²·V^-1·s^-1和9.3×10¹²cm^-2，且在200K到2K范围内二维电子气的浓度基本不变，变磁场霍尔测量发现只有一种载流子(电子)参与导电.在2K温度下，观察到量子霍尔效应，Shubnikov-de Haas (SdH) 振荡在磁场约为3T时出现，证明了此结构呈现了典型的二维电子气行为.通过实验数据对二维电子气散射过程的半定量分析，推出量子散射时间为0.23ps，比以往报道的AlGaN/GaN结构中的散射时间长，说明引入AlN层可以有效减小合金散射，进一步的推断分析发现低温下以小角度散射占主导地位.     

利用交流阻抗谱揭示Ir(111)电极在酸性溶液中的氢吸附动力学

本文利用阻抗谱研究Ir(111)电极在HClO₄和H₂SO₄中溶液中的氢吸附行为. 在HClO₄溶液中,随着施加电位从0.2 V降到0.1 V(vs RHE),Ir(111)电极上氢吸附速率从1.74×10^-8 mol·cm^-2·s^-1增大到 3.47×10^-7 mol·cm^-2·s^-1 . 与相同条件下Pt(111)电极上的氢吸附速率相比,Ir(111)上的氢吸附速率要小1∽2个数量级,这是由于Ir(111)电极与H₂O结合能力更强,因此位于水合氢键网络中的氢离子需要克服更高的能垒才能重新定向进而发生欠电位沉积. 在H₂SO₄溶液中,氢吸附电位负移了200 mV,吸附速率也下降了一个数量级,这是由于Ir(111)电极表面强吸附的硫酸根/硫酸氢根物种的阻碍作用. 结果表明,在电化学环境下,位于电极表面附近的水分子的取代和重新定向在很大程度上影响了氢吸附过程.     

高压下制备的透明低阻n-ZnO陶瓷的表征

本文报道了高压烧结透明低阻ZnO陶瓷的过程,解决了常压下烧结ZnO高阻不透明的问题.在5 GPa,800℃下获得了最佳光电性能的低阻透明ZnO陶瓷,其透过率为49%左右,电阻率为0.57 Ω ·cm,禁带宽度为3.31 eV,载流子浓度为8.36×10¹⁷ cm^-3,迁移率为23 cm² ·V^-1 ·s^-1,良好的n型导电性来自于Zn_i和V_o关键词： 高压 陶瓷 n-ZnO 透明     

CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究

用深能级瞬态谱和光致发光研究了无背接触层的CdS/CdTe薄膜太阳电池的杂质分布和深能级中心.得到了净掺杂浓度在器件中的分布.确定了两个能级位置分别在E_V+0365 eV和E_V+0282 eV的深中心,它们的浓度分别为167×10¹² cm^-3和386×10¹¹ cm^-2,俘获截面分别为143×10^-14cm²和153×10^-16cm².它们来源于以化学杂质形式存在的Au和（或）Te_Cd^-复合体,或与氩氧气氛下沉积CdTe时的氧原子相关. 关键词： 深能级瞬态谱 光致发光 CdS/CdTe太阳电池