| Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes |
| |
| 作者姓名： | 李春伟 朱彦旭 沈光地 张勇辉 秦园 高伟 蒋文静 邹德恕 |
| |
| 作者单位： | Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China |
| |
| 基金项目： | Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092007), the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the Doctoral Program Foundation of Beijing, China (Grant No. X00020 |
| |
| 摘 要： | In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.
|
| 关 键 词： | Ohmic contact tunneling light emitting diode Zn/Au-ITO/Zn |
| 收稿时间： | 2009-12-08 |
Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes |
| |
| Li Chun-Wei,Zhu Yan-Xu,Shen Guang-Di,Zhang Yong-Hui,Qin Yuan,Gao Wei,Jiang Wen-Jing and Zhou De-Shu.Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes[J].Chinese Physics B,2010,19(9):97305-097305. |
| |
| Authors: | Li Chun-Wei Zhu Yan-Xu Shen Guang-Di Zhang Yong-Hui Qin Yuan Gao Wei Jiang Wen-Jing and Zhou De-Shu |
| |
| Institution: | Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China |
| |
| Abstract: | In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 Ω · cm2 and 1.743×10-3 Ω ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA. |
| |
| Keywords: | Ohmic contact tunneling light emitting diode Zn/Au-ITO/Zn |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
