| GaN HEMT器件结构的研究进展 |
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| 引用本文： | 于宁,王红航,刘飞飞,杜志娟,王岳华,宋会会,朱彦旭,孙捷.GaN HEMT器件结构的研究进展[J].发光学报,2015,36(10):1178-1187. |
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| 作者姓名： | 于宁 王红航 刘飞飞 杜志娟 王岳华 宋会会 朱彦旭 孙捷 |
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| 作者单位： | 1. 北京工业大学电子信息与控制工程学院 光电子技术实验室, 北京 100124;
2. 电子科技大学中山学院 电子薄膜与集成器件国家重点实验室中山分实验室, 广东 中山 528402 |
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| 基金项目： | 北京市15青年拔尖项目(311000543115501); 中山市科技计划(2014A2FC305); 国家自然科学基金(61204011); 科研基地建设(PXM2015_014204_500008)资助项目 |
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| 摘 要： | Ga N高电子迁移率晶体管(HEMT)具有大的禁带宽度、高电子饱和速度、异质结界面的高二维电子气浓度、高击穿电压以及高的热导率,这一系列特性使它在高频、高功率、高温等领域得到了广泛的认可。本文首先论述了制约氮化镓高电子迁移率晶体管器件性能提高所遇到的问题及解决方法;然后,着重从优化材料结构设计和器件结构设计的角度,阐述了氮化镓高电子迁移率晶体管器件在高频高功率领域的最新研究进展;最后,讨论了器件进一步发展的方向。
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| 关 键 词： | 高电子迁移率晶体管 氮化镓 高频 结构设计 |
| 收稿时间： | 2015-07-21 |
Research Progress of GaN HEMT Device Structure |
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| YU Ning,WANG Hong-hang,LIU Fei-fei,DU Zhi-juan,WANG Yue-hua,SONG Hui-hui,ZHU Yan-xu,SUN Jie.Research Progress of GaN HEMT Device Structure[J].Chinese Journal of Luminescence,2015,36(10):1178-1187. |
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| Authors: | YU Ning WANG Hong-hang LIU Fei-fei DU Zhi-juan WANG Yue-hua SONG Hui-hui ZHU Yan-xu SUN Jie |
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| Institution: | 1. Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China |
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| Abstract: | GaN high electron mobility transistor (HEMT) has been widely acknowledged for use in high-frequency, high-power, and high-temperature applications because of their features such as its wide band gap, high electron saturation velocity, high 2-DEG density at the hetero-interface, high breakdown voltage (BV), and high thermal conductivity. The issues that limit the gallium nitride high electron mobility transistor device performance improvement and some solutions are introduced firstly. And then, the latest research progress on the high-frequency, high-power area of gallium nitride high electron mobility transistor is reviewed in detail with focus on the material structural design and the device structural design. Finally, the direction for the development of the device is discussed briefly. |
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| Keywords: | high electron mobility transistor GaN high-frequency structural design |
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