一类非线性双曲—抛物耦合方程组的周期边值问题

§1 引言在循环燃料反应堆中,其中心密度u及温度v满足下列方程组:     

结晶化学基础理论在现代X射线单晶结构分析中的一些应用

研究化学物质分子结构的方法很多,而衍射法是其中主要的方法之一,它包括X射线衍射、中子衍射和电子衍射等。由于X射线容易得到,而且成本较低,因此、X射线衍射法是分     

概率论在就业决策中的一个应用

随着科学技术的飞速发展，生产力水平正在不断提高，各行各业的就业岗位已经远远不能满足即将从业者的需求，就业“供”与“需”之间的予盾越来越突出．对于一名即将从业的人（尤其是即将毕业的大学生）来说，面对强手如林的竞争局面，除了刻苦学习必备的基础知识，努力训练从业的基本技能以外，在竞争工作岗位时，如何进行就业的决策，也是一个不容忽视的问题．本文通过几种具体情况，对这个问题进行一点探讨．     

激光雷达中层大气遥感技术

介绍了中科院武汉物理与数学研究所瑞利激光雷达的技术特点，并从其对武汉地区中层大气密度和温度廓线探测的典型结果，给出了该激光雷达对中层大气主要参数的探测能力。     

Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

发挥“数学应用”教学的多方面素质教育功能

素质教育要求数学教学要培养学生的数学应用能力，我们认为培养学生数学应用能力既是目的，也是手段，在培养学生的数学应用能力的过程中，还应努力挖掘其它的素质教育功能，充分发挥“数学应用”教学的多层次素质教育作用．１．在“数学应用”教学中培养学生的数学应用能...     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

多发弹丸发射系统阀门电源及可编程发射控制器的研制

多发弹丸发射系统是我院20世纪90年代从俄罗斯引进的设备，用于发射弹丸的快阀门电源属于非标产品，其备件缺乏，维修困难。为保证HL-2A装置弹丸注入实验顺利进行，根据设计要求，研制了这套弹丸快阀电源和可编程发射控制器。它们之间的连接如图1所示。     

离子注入合成β-FeSi2薄膜的显微结构

采用MEVVA源(Metal Vapor Vacuum Arc Ion Source)离子注入合成β-FeSi2薄膜,用常规透射电镜和高分辨电镜研究了不同制备参数下β-FeSi2薄膜的显微结构变化. 研究结果表明:调整注入能量和剂量,可以得到厚度不同的β-FeSi2表面层和埋入层. 制备过程中生成的α,β,γ和CsCl型FeSi2相的相变顺序为γ-FeSi2→β-FeSi2→α-FeSi2,CsCl-FeSi2→β-FeSi2→α-FeSi2或β-FeSi2→α-FeSi2. 当注入参数增加到60kV,4×1017ions/cm2,就会导致非晶的形成,非晶在退火后会晶化为β-FeSi2相,相变顺序就变为非晶→β-FeSi2→α-FeSi2. 随退火温度逐渐升高硅化物颗粒逐渐长大,并向基体内部生长,在一定的退火温度下硅化物层会收缩断裂为一个个小岛状,使得硅化物/硅界面平整度下降. 另外,对于β-FeSi2/Si界面取向关系的研究表明,在Si基体上难以形成高质量β-FeSi2薄膜的原因在于多种非共格取向关系的并存、孪晶的形成以及由此导致的界面缺陷的形成.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.