| Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy |
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| 作者姓名： | 吴良才 刘波 宋志棠 冯高明 封松林 陈宝明 |
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| 作者单位： | [1]Laboratory of Nanotechnology, Research Center of Functional Semiconductor Film Engineering and Technology,Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [3]Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| 基金项目： | Supported by the Chinese Academy of Sciences （Y2005027）, the Science and Technology Council of Shanghai （AM0517, 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043）, the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation （Hong Kong）. |
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| 摘 要： | Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.
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| 关 键 词： | 辐射剂量 相变记忆 GeSbTe合金 磁电管溅射 储存介质 |
| 收稿时间： | 2006-04-28 |
| 修稿时间： | 2006-04-28 |
Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy |
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| WU Liang-Cai, LIU Bo, SONG Zhi-Tang, FENG Gao-Ming, FENG Song-Lin, CHEN Bomy.Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy[J].Chinese Physics Letters,2006,23(9):2557-2559. |
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| Authors: | WU Liang-Cai LIU Bo SONG Zhi-Tang FENG Gao-Ming FENG Song-Lin CHEN Bomy |
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