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1.
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.  相似文献   
2.
A novel metal–organic framework material {[N(C2H5)3][Zn2(ptmda)22-H2O)]·(H2O)0.5}n { GUT-3 ; H2ptmda is 4,4′-([p-tolylazanediyl]bis [methylene])dibenzoic acid} was successfully synthesized using the hydrothermal method and characterized by X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. GUT-3 has a two-dimensional network based on dinuclear [Zn2(ptmda)2(μ2-H2O)] building units which formed an eightfold interpenetration network in GUT-3 molecules. Hirshfeld surface analysis revealed that H–H, C–H, and O–H bonds accounted for the majority of intermolecular interactions. Moreover, the interactions between GUT-3 and As(V) – the form of As(V) is AsO43− – were analyzed in aqueous solutions in a batch system to study the effect of pH, concentration, adsorbent dose, adsorption time, adsorption temperature, and shaking speed. The kinetic and isotherm data of arsenic adsorption on GUT-3 were accurately modeled by pseudo-second-order, Langmuir (qm = 33.91 mg/g), and Freundlich models. The Box–Behnken response surface method was used to optimize the adsorption conditions of As(V) from the simulated arsenic-contaminated wastewater. The effect of various experimental parameters and optimal experimental conditions was ascertained using the quadratic model.  相似文献   
3.
张蓉  陈跃  郑培  代莹  李莎莎  贾颖异  谢然  王金花 《色谱》2023,41(2):178-186
建立了凝胶渗透色谱(GPC)-气相色谱-离子阱质谱同时检测桔梗原药和当归提取物中101种农药残留的分析方法。方法采用乙腈超声辅助提取桔梗原药和当归提取物,浓缩提取液至近干后用乙酸乙酯-环己烷(1∶1, v/v)复溶,采用凝胶渗透色谱法(选取40 cm长、内径20 mm的凝胶渗透色谱柱)对样品进行净化,弃去前段含脂类、色素等杂质的流出液,收集17~30 min洗脱液并旋转蒸发浓缩至近干,甲苯1 mL定容上机。选用DB-5MS毛细管色谱柱分离待测物,通过离子阱质谱实现对101种农药残留的高效检测。方法通过优化前处理条件和离子阱二级质谱参数,有效降低了复杂中药基质对待测化合物的干扰,最大限度提高了样品中农药的定量准确性和回收率,101种农药3水平添加的平均回收率为58.3%~108.9%,每个添加水平10次独立重复测定的相对标准偏差为0.4%~16.5%,检出限(LOD)范围为0.2~40.0 μg/kg,可满足当前韩国、日本、欧洲规定的最大残留限量(maximum residue limits, MRLs)要求。方法具有操作简单快速、灵敏度高、重复性好等特点,凝胶渗透色谱技术的应用克服了固相萃取小柱净化容量不足的弊端,离子阱技术的应用可以进一步排除共流出基体杂质的干扰,提高定量和定性的准确性,检测效果优于常用的气相色谱-质谱法,是对中药中同时分析多种农药残留检测方法的有益补充。  相似文献   
4.
3-dimensional (3D) Fe−Co−LDH/MXene composite was synthesized by in-situ synthesis and assembly of Fe−Co−LDH rod around MXene under hydrothermal condition. Due to the unique 3D configuration and good conductivity, the obtained Fe−Co−LDH/MXene modified glassy carbon electrode (Fe−Co−LDH/MXene/GCE) showed excellent electrochemical activity for As(III) detection. Via square-wave anodic stripping voltammetry, the response current on Fe−Co−LDH/MXene/GCE had good linear relationship with As(III) concentrations (1∼1000 ppt) with superior sensitivity (0.22 μA ppt−1 cm−2) and low detection limit (0.9 ppt). The mechanism of As(III) adsorption was demonstrated. The electrode showed excellent anti-interference ability. Real water sample analysis demonstrated the Fe−Co−LDH/MXene/GCE was deployable in aqua-system.  相似文献   
5.
总结了非平衡溶剂化新理论和在量子化学软件Q-Chem中基于含时密度泛函理论(TD-DFT)实现溶剂效应下计算电子吸收和发射光谱的数值解方法.采用该方法计算了染料敏化太阳能电池(DSSCs)中三苯胺型有机染料■在真空和乙腈溶剂中的电子结构与光谱性质,研究发现,π共轭桥上碳碳双键的个数和溶剂效应会促进光电转换.  相似文献   
6.
首先, 在碱性条件下, 不使用表面活性剂, 采用St?ber小球法以正硅酸四乙酯(TEOS)和正硅酸四丙酯(TPOS)为硅源, 生成初级氧化硅球形颗粒; 然后, 使酚醛树脂(间苯二酚和甲醛)与球形氧化硅的羟基共缩合形成酚醛树脂-氧化硅复合材料; 最后, 经高温碳化和酸蚀获得了空心碳纳米球(HCNSs). 通过调节TEOS/TPOS的摩尔比获得了一系列具有良好的单分散性且粒径、 壁厚可调节的HCNSs, 其粒径和壁厚分别在280~430 nm和15~63 nm的范围内. 仅以TPOS为硅源时合成的HCNS-0/4具有较大的粒径(426 nm)和壁厚(63 nm)、 较高的比表面积(1216 m2/g)和孔容(0.508 cm3/g), 并且具有较大的挥发性有机化合物(VOCs)吸附性能, 其正己烷、 甲苯和油气的静态吸附容量分别为2.02, 1.42和0.926 g/g, 正己烷和甲苯的动态吸附容量分别为2.01 g/g和1.37 g/g, 均远高于商业化活性炭.  相似文献   
7.
使用基于多态经验价键模型的分子动力学模拟, 对水溶液中质子的水合结构及其在质子传递过程中的动力学过程进行了研究. 在价键模型的方法下, 质子的水合结构主要以H9O4+(Eigen)以及过渡态的H5O2+(Zundel)结构形态存在, 且在这两种结构中以Eigen的形态表现明显. 通过对质子传递过程中不同水合结构的态密度频谱分析, 发现一个在2000~3000 cm-1范围内的明显连续的宽吸收谱带, 主要归因于Eigen结构的贡献, 这些特征峰的出现与水合氢离子第一溶剂化层内的强氢键作用密切相关. 对于Zundel的结构, 在1760 cm-1处出现一个较为明显的肩峰, 归属为质子传递模式的特征振动. 通过对质子水合结构态密度频谱的分析, 可望增强对于稀酸溶液红外光谱中的连续宽吸收带以及质子传递的微观动力学过程的理解.  相似文献   
8.
CDK2/Cyclin A2复合蛋白的异常表达与乳腺癌、 口腔癌、 食管鳞状细胞癌的发生密切相关. CDK2/ Cyclin A2复合蛋白的活性位点不同于CDK2单体. 至今临床上尚无靶向此复合蛋白的药物分子. 针对CDK2/Cyclin A2复合蛋白, 以实验报道的10个抑制剂分子构建药效团模型, 通过药物体外药代动力学(ADME)、 Docking、 聚类分析、 毒性预测, 从DrugBank, ChEMBL和TCM@Taiwan 3个数据库约90万组数据中进行高通量虚拟筛选, 进一步进行MD模拟、 MM/PBSA结合自由能计算、 能量分解和平均非共价作用(aNCI)分析, 筛选出3个抑制效果优于阳性实验药Roscovitine的先导分子: DrugBank-2004, DrugBank-583和ChEMBL-7122. 与CDK2蛋白相比, CDK2/Cyclin A2复合蛋白结合位点空间变大, 先导分子与Lys33, Asp86, Lys129和Asp145残基之间的排斥作用有所降低, 导致结合自由能更大.  相似文献   
9.
Desulfurized gypsum (DG) as a soil modifier imparts it with bulk solid sulfite. The Fe(III)–sulfite process in the liquid phase has shown great potential for the rapid removal of As(III), but the performance and mechanism of this process using DG as a sulfite source in aqueous solution remains unclear. In this work, employing solid CaSO3 as a source of SO32−, we have studied the effects of different conditions (e.g., pH, Fe dosage, sulfite dosage) on As(III) oxidation in the Fe(III)–CaSO3 system. The results show that 72.1% of As(III) was removed from solution by centrifugal treatment for 60 min at near-neutral pH. Quenching experiments have indicated that oxidation efficiencies of As(III) are due at 67.5% to HO, 17.5% to SO5•− and 15% to SO4•−. This finding may have promising implications in developing a new cost-effective technology for the treatment of arsenic-containing water using DG.  相似文献   
10.
采用水热法制备了一种新型稀土配位聚合物[Dy(3-PA)3(H2O)]n(3-PA=3-吡啶丙烯酸)(1),并通过X射线单晶衍射结构分析、元素分析、红外光谱、热重分析对配合物1进行了结构表征.结构分析表明,标题配合物属于三斜晶系,Pī空间群,晶胞参数为:a=0.617 16(5)nm,b=1.270 45(11)nm,c=1.564 03(13)nm,α=111.557 0(10)°,β=90.307 0(10)°,γ=95.342 0(10)°,V=1.134 54(16)nm3,Z=2.金属离子Dy(III)通过配体3-AP羧基的桥联作用,链接成为一维双螺旋链状配位聚合物.  相似文献   
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