基于Origin软件在电学实验中的应用简

采用Origin软件针对伏安法测量电阻的实验数据进行处理。结果表明利用Origin软件处理,不但快捷,直观和简单,还可以降低在数据处理过程中,人为因素带来的实验误差。     

Increased work function in PEDOT:PSS film under ultraviolet irradiation

An increase of work function （0.3 eV） is achieved by irradiating poly（3,4-ethylenedioxythiophene）：poly（styrene sul- fonate） （PEDOT：PSS） film in vacuum with 254-nm ultraviolet （UV） light. The mechanism for such an improvement is investigated by photoelectron yield spectroscopy, X-ray photo electron energy spectrum, and field emission technique. Sur- face oxidation and composition change are found as the reasons for work function increase. The UV-treated PEDOT：PSS film is used as the hole injection layer in a hole-only device. Hole injection is improved by UV-treated PEDOT：PSS film without baring the enlargement of film resistance. Our result demonstrates that UV treatment is more suitable for modifying the injection barrier than UV ozone exposure.     

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.     

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.     

用单片验电器演示导体表面电荷密度分布的实验探究

论述了单片验电器的工作原理,将单片验电器用于传统尖形导体和用不同直径圆形金属筒组合导体表面电荷分布实验.     

基于固态Marx叠加器的脉冲电流源设计

基于固态Marx叠加器结构, 提出了一种使用电感作为储能元件的新型电流源设计。为此改变了固态Marx叠加器的基本单元结构, 阐述了设计原理, 给出了控制方式, 并进行实验验证了其可行性。此电流源能够产生拥有良好平顶、快速上升沿和下降沿的窄电流脉冲, 且不受一定范围内变化的电阻负载的影响；同时本电源还具有控制方式简单、运行可靠等特点。     

羧基化合物控制WO_3·H_2O纳米片的合成及光致变色性能

采用水溶液法,在低温下通过控制羧基化合物的种类(草酸、酒石酸、柠檬酸)和加入量合成了单分散性WO_3·H_2O纳米片,并采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、紫外-可见光谱仪(UV-vis)对样品的结构和形貌进行表征.结果发现羧基对单分散性WO_3·H_2O纳米片的形成具有重要作用,在此基础上讨论了它的作用机理.此外,实验还考查了添加草酸、酒石酸、柠檬酸对合成样品的光致变色性的影响,结果发现样品的光致变色性依次增强,并结合SEM、XRD、UV-vis进行了分析研究.     

氮化硼纳米片及其凝胶材料的研究进展

氮化硼纳米片具有高机械强度、良好的化学惰性和热稳定性等优点.除了这些性质,基于纳米氮化硼的凝胶材料还有高比表面积、大孔隙率等特点.因此它在催化、储氢、除污和气体吸附等领域具有潜在的应用前景.这篇综述主要介绍了氮化硼纳米片及其凝胶材料的制备,举例说明了氮化硼凝胶的关键应用并加以展望.     

退火温度对La_(0.4)Nd_(0.1)Sr_(0.5)MnO_3薄膜结构及CMR的影响

利用射频磁控溅射法结合后退火工艺在LaAlO3(100)衬底上制备了La0.4Nd0.1Sr0.5MnO3(LNSMO)一系列薄膜样品。通过X射线衍射仪(XRD)、原子力显微镜(AFM)、光电子能谱(XPS)、四探针法对其结构及性质进行了测试。结果表明,薄膜在700～900℃温度区间退火形成单相的赝立方钙钛矿结构。退火温度不同导致薄膜中氧含量发生变化并且对晶粒的尺寸也有很大影响。经过850℃退火的薄膜样品,在室温300 K,磁场为1.5 T的条件下,磁电阻达到24.9%。     

成像级CdSe中红外波片的表面处理工艺研究

本文利用改进的垂直无籽晶气相升华法生长出尺寸达Φ30×40 mm的优质硒化镉(CdSe)单晶体。解理晶体,通过X射线衍射仪测试精确的获得(001)晶面。然后定向切割、研磨、抛光,获得了尺寸为20×20×3mm~3的CdSe中红外波片初胚。以弱碱性溶液与刚玉粉的混合液作为抛光液,利用化学机械抛光法对CdSe中红外波片进行表面抛光处理。结果显示,抛光处理有效的减少了波片表面的损伤层、划痕及结构缺陷,晶片表面的粗糙度降低,在2~20μm波段透过率较高(达到70%),满足中红外波片的应用需求。