8-羟基喹啉铝在多孔铝中的发光研究

利用多孔铝非常高的孔隙率,将8-羟基喹啉铝(Alq3)镶嵌到多孔铝中,得到Alq3/多孔铝镶嵌膜,研究了不同条件下制备的多孔铝镶嵌膜的荧光光谱。实验表明,Alq3在多孔铝中的发光峰位在490 nm左右,比其在固态粉末状态蓝移了许多。Alq3/多孔铝镶嵌膜的发光特性与多孔铝中嵌入Alq3分子的数量及聚集程度有关。当分子数量较多、聚集程度较大时,发光增强,光谱峰位红移,但聚集程度太大时,易发生荧光猝灭现象。数量较多时,由于Alq3分子大多以范德瓦尔斯力结合,聚体较少,所以峰位移动幅度不大。实验中还发现,Alq3因为处在小孔中,光学性质稳定,荧光光谱带宽超过100 nm,比一般染料大得多,这使Alq3/多孔铝镶嵌膜有可能在固体可调谐激光器方面得到新的应用;同时也为探究Alq3/多孔铝镶嵌膜在电致发光器件中的发光特性奠定了基础,为将其进一步推向实用提供了实验依据。     

Temperature－Dependent Photoluminescence of ZnTe Films Grown on Si Substrates

ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83K shows an asymmetry line shape, which can be decomposed into two Gaus-siam lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.     

Structural Characteristics and Photoluminescence of Zinc Oxide Nanocrystals

We have prepared zinc oxide nanocrystals using a new type of solid-state reaction.The nanosized grains were obtained by changing the heat treatment temperature and the sizes were determined to be from 10 to 42 nm.The lattice vibrational Raman spectra were measured and assigned at different grain sizes.We observed a strong visible emission centred at 580 nm in the nanosized ZnO at room temperature.We have investigated the photoluminescence properties under different grain sizes after annealing.The weakening of the luminescence is attributed to the decrease of intrinsic structural defects,mainly,oxygen vacancies and the increase of the grain size in the nanocrystals.     

磁共振光学测量——自旋共振的延伸和发展

 过去的几十年中,电子自旋共振技术(ESR)在研究半导体材料缺陷及材料的电性能方面起到不可估量的作用。然而,当探测现代外延层、层问结构和超晶格时,由于材料体积小而导致总自旋数目减少与电子自旋共振的低灵敏度相矛盾,则ESR的重要性就显现不出。磁共振光学测量(ODticalDetectionofMagneticResonance,简称ODMR)的出现是一种物理和技术上的必然选择。本文对ODMR进行简要介绍,以便对磁共振技术感兴趣者了解这一新技术。     

多孔硅光致发光的温度效应研究

通过对多孔硅光致发光峰随测量温度变化的研究，发现随测量温度的下降，光致发光峰位有两种截然不同的移动方向：发光峰中心波长较长的样品，主峰向低能方向移动(即红移)；而发光峰位波长较短的样品则向高能方向移动(即蓝移).根据多孔硅光致发光峰的温度效应，定性地给出了发光效率随波长变化的模拟曲线，并由此能较好地解释多孔硅光致发光峰位随温度变化而移动的实验现象. 关键词：     

现代防伪技术中的物理方法

 假冒伪劣商品对当前国际市场的冲击,已成为国际性的一大公害。当前假冒伪劣商品的交易额约占世界贸易总额的5%～6%,每年达到1500亿～1800亿美元,这种危害早已引起世界各国的重视。我国目前正处在改革开放的时代,社会主义市场经济持续健康的发展,但当前国内市场上假冒伪劣商品的泛滥严重地干扰了我国国民经济的发展,并使国家蒙受了巨大的经济损失,有些假冒伪劣商品流入国际市场,已严重损害了我国的声誉,破坏了原已建立起来的良好的工业形象,同时也干扰了顺畅的出口。据统计,仅1997年在我国被查处和销毁的假冒伪劣商品总价值约达58亿远人民币。     

苯-烷氧基苯有机共轭聚合物的光致发光性能

介绍了4种新型发光材料苯—烷氧基苯共聚物的合成方法。材料的UV—Vis吸收光谱及其薄膜和溶液的光致发光性能。用电化学掺杂方法测定了其能带结构。并讨论了烷氧基侧基长度对高聚物发光强度的影响。结果表明，这4种高聚物在紫外光激发下均发蓝光，π-π^*跃迁(Eg)值为3．2～3．3eV，烷氧基中碳原子数为10个左右时发光强度最高。     

Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped AlxGa1-xN／GaN Heterostructure

Low-temperature photoluminescence measurement is performed on an undoped AlxGa1-xN/GaN heterostructure. Temperature-dependent Hall mobility confirms the formation of two-dimensional electron gas (2DEG) near the heterointerface. A weak photoluminescence (PL) peak with the energy of - 79meV lower than the free exciton (FE) emission of bulk GaN is related to the radiative recombination between electrons confined in the triangular well and the holes near the fiat-band region of GaN. Its identification is supported by the solution of coupled one-dimensional Poisson and Schr6dinger equations. When the temperature increases, the red shift of the 2DEG related emission peak is slower than that of the FE peak. The enhanced screening effect coming from the increasing 2DEG concentration and the varying electron distribution at two lowest subbands as a function of temperature account for such behaviour.     

BaFCl:Eu2+光激励读出过程中两种F色心的差异

研究了紫外线辐照下BaFCl:Eu²⁺的光激励发光性质.测定了在不同温度下经紫外线辐照后的光激励谱,变化范围为10—300K同时研究了两种F色心的光激励发光强度在激励读出过程中随温度的变化关系.分析了光激励谱产生差异的原因. 关键词：