Adjusting the properties of the photon generated via an optical parametric oscillator by using a pulse pumped laser

The cavity-enhanced spontaneous parametric down-conversion far below threshold can be used to generate a narrow-band photon pair efficiently. Previous experiments on the cavity-enhanced spontaneous parametric down-conversion almost always utilize continuous wave pump light, but the pulse pumped case is rarely reported. One disadvantage of the continuous wave case is that the photon pair is produced randomly within the coherence time of the pump, which limits its application in the quantum information realm. However, a pulse pump can help to solve this problem. In this paper, we theoretically analyze pulse pumped cavity-enhanced spontaneous parametric down-conversion in detail and show how the pump pulse affects the multi-photon interference visibility, two-photon waveform, joint spectrum and spectral brightness.     

Fe/Mo/Al2O3催化剂热解火焰法合成单壁、双壁和三壁碳纳米管:合成温度、取样时间与CO流量的影响

本文重点描述了应用Fe/Mo/Al2O3载体载入式催化剂,以CO为碳源,通过氧炔焰形成热解火焰合成单壁、双壁和三壁碳纳米管的实验过程.研究了合成温度,取样时间以及碳源气体CO流最对最终产物的影响.结果表明,830℃的合成温度可以满足合成单壁、双壁和三壁碳纳米管所需要的高温环境,消除载体催化剂聚合物对碳纳米管的包裹,大幅提高合成产物的产量;10 min的取样时间以及0.4 L/min的CO流量可以良好分散载体催化剂聚合物团簇,进而优化产物形态和进一步提高产量.     

O-GlcNAcase抑制剂

O-连接的N-乙酰葡糖胺糖基化修饰 (O-GlcNAcylation) 是一种存在于蛋白质Ser/Thr上的翻译后修饰。与磷酸化相似,它参与细胞内的信号传递,并与神经退行性疾病、Ⅱ型糖尿病、癌症等许多疾病的发病机理密切相关。O-连接的N-乙酰葡糖胺水解酶 (O-GlcNAcase, OGA) 是生物体内唯一水解蛋白质O-GlcNAc修饰的糖苷酶。因此,研究高效、专一的OGA小分子抑制剂是调节细胞中蛋白质O-GlcNAc水平的有效策略,利于阿尔茨海默病等相关神经退行性疾病新型药物的开发。结合本实验室对OGA抑制剂的研究,本文介绍了OGA的结构、催化机理及目前OGA抑制剂的研究进展,讨论了各种抑制剂的构效关系,并对OGA抑制剂的研究前景进行了展望。     

基于仿生膜的功能化单纳米通道在分析化学中的应用

灵感来源于蛋白质离子通道的仿生功能化单纳米通道,已逐渐成为一种成熟的单分子检测技术和离子整流器。功能化纳米通道包括两种:基因改造的蛋白质纳米通道和固体加工的纳米通道。常用的固体纳米通道有三种:在纳米氮化硅或石墨烯上用聚焦离子束(FIB)或电子束(FEB)轰击得到的纳米通道,化学腐蚀聚合物薄膜中的重金属离子轨迹得到的锥形纳米通道和拉制毛细管或激光刻蚀得到的玻璃纳米孔。相对于蛋白质纳米通道,固态的人工纳米通道具有更优越的机械稳定性,并可用于各种功能基团的修饰。经过近十年的发展,包括蛋白质纳米通道在内的各种仿生的纳米通道已广泛用于对小分子、蛋白质和聚合物等其他一些对象的定性和定量检测。本综述详细介绍了近年来国内外该领域的发展,并对未来的发展方向作了简要的展望。     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

A new method of detecting interferogram in differential phase-contrast imaging system based on special structured x-ray scintillator screen

An x-ray scintillator screen with a special structure,functioning as detector and analyser grating,was proposed for collecting the interferogram of differential phase contrast imaging without absorption grating and difficulty of fabrication by a state of the art technique.On the basis of phase grating diffraction,a detecting model of the scintillator screen was built for analysing the phase and absorption information of objects.According to the analysis,a new method of phase retrievals based on two-images and the optimal structure of screen were presented.     

Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection

<正>We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength.In this method,the raw single photon avalanche signals are not attenuated,thus a high signal-to-noise ratio can be obtained compared with the existing results.The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10~(-4) at 213 K.     

Beam Parameters for End Diffraction of TE0 Mode of Planar Waveguide

The relation between diffractive beam parameters and normalized frequency is analyzed that leads to two improved Tormulas for two kinds of mode-field halT-widths and several formulas for divergence angle as well as beam propagation factor. The numerical calculation indicates that the maximal relative error is less than 0.5% within a reasonable parameter range.     

Geometric formulations and variational integrators of discrete autonomous Birkhoff systems

The variational integrators of autonomous Birkhoff systems are obtained by the discrete variational principle. The geometric structure of the discrete autonomous Birkhoff system is formulated. The discretization of mathematical pendulum shows that the discrete variational method is as effective as symplectic scheme for the autonomous Birkhoff systems.     

Fabrication and characterization of ultra-low noise narrow and wide band Josephson parametric amplifiers

We have fabricated two types of lumped-element Josephson parameter amplifiers (JPAs) by using a multilayer micro-fabrication process involving wet etching of Al films. The first type is a narrow band JPA which shows typical gain above 14 dB in a bandwidth around 35 MHz. The second type is a wideband JPA which is coupled to an input 50 Ω transmission line via an impedance transformer that changes the impedance from about 15 Ω on the non-linear resonator side to 50 Ω on the input transmission line side. The wideband JPA could operate in a 200 MHz range with a gain higher than 14 dB. The amplifiers were used for superconducting qubit readout. The results showed that the signal to noise ratio and hence the readout fidelity were improved significantly.