Gallium and indium co‐doped ZnO thin films for white light emitting diodes

Ga and In co‐doped ZnO (GIZO) thin films together with ZnO, In‐doped ZnO (IZO), Ga‐doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current–voltage characteristics showed relatively lower turn‐on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Zr掺杂对MgB2超导微观结构和超导电性的影响

将Mg粉、Zr粉和B粉按比例混合获得Mg1-xZrxB2(x=5%10%和20%),压制成型后,在流通氩气的条件下于800℃烧结2h.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)分析烧结后样品的显微结构和化学组成,采用差热分析(DTA)观察Zr掺杂对MgB2分解温度的影响,并用物性测试仪(PPMS)测试样品的超...     

Photocatalytic activity of divalent ion (copper,zinc and magnesium) doped NiAl2O4

Nickel aluminate (NiAl₂O₄) and doped nickel aluminate (Ni_1-xM_xAl₂O₄; M = Mg, Zn, Cu; x = 0.1) were prepared by sol-gel method using citric acid. The synthesized compounds were analyzed by various techniques such as powder XRD, FTIR, SEM-EDAX and UV-DRS. The lattice parameter was found to increase with the copper, zinc and magnesium doping in nickel aluminate. The band gap was decreased from 3.0 eV (NiAl₂O₄) to 2.9 (zinc doped), 2.7 eV (magnesium doped) and increased to 3.1 eV in the case of copper doping. The catalytic study was carried out for a cationic (methylene blue) and an anionic dye (methyl orange). The percentage degradation of methyl orange using Zn_0.1Ni_0.9Al₂O₄ and Mg_0.1Ni_0.9Al₂O₄ was found to be 92% (180 min) and 96% (90 min). 93% (120 min) and 97% (120 min) degradation of methylene blue was observed using zinc doped and magnesium doped nickel aluminate respectively. These results are comparatively higher than its parent analogue (94% (180 min) degradation against methyl orange and 91% (120 min) against methylene blue). Whereas the percentage degradation was found to be less in the case of Cu_0.1Ni_0.9Al₂O₄ (83% (180 min) against methyl orange and 90% (120 min) against methylene blue).     

Ultrasonic-assisted synthesis of Ce doped cubic–hexagonal ZnTiO3 with highly efficient sonocatalytic activity

Ce doped ZnTiO₃ as a novel catalyst with highly efficient and stable sonocatalytic activity was synthesized via an ultrasound-assisted sol–gel method using non-ionic surfactant Pluronic F127 as structure directing agent. Synthesized samples were characterized by using various techniques, such as XRD, TEM, SEM, EDX, ​XRF, BET, DRS, and PL, and their sonocatalytic activity studied toward degradation of p-Nitrophenol as a model organic compound. The synthesized mesoporous Ce/ZnTiO₃ had mixed cubic–hexagonal phase with large surface area (118.2 m² g^–1) and narrow pore size distribution (4.9 nm). The effects of cerium concentration, calcination temperature, and calcination time on the structure and the sonocatalytic activity of Ce/ZnTiO₃ were studied in detail. XRD results were suggested that the relation between the phase structure and the catalytic activity is considerable. Significant decrease in band-gap and PL intensity was observed with increasing the cerium concentration in the ZnTiO₃. It became clear that the Ce/ZnTiO₃ (0.81 mol%) shows high sonocatalytic activity compared with pure ZnTiO₃ and other Ce/ZnTiO₃ samples as well as commercial TiO₂-P25. The possible mechanism for the enhanced sonocatalytic activity of Ce/ZnTiO₃ was discussed in details. The electrical energy consumption was also considered during sonocatalytic experiments.     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

Defect Chemistry of Singly and Doubly Doped Ceria: Correlation between Ion Transport and Energetics

Earlier studies have shown a strong correlation between the enthalpy of formation, ΔH_f,ox, and the ionic conductivity, σ_i, near room temperature in doped ceria systems, which are promising solid electrolytes for intermediate‐temperature solid oxide fuel cells (IT‐SOFCs). The present work demonstrates that this correlation holds at the operating temperature of IT‐SOFCs, 600–700 °C. Solid solutions of Ce_1?xNd_xO_2?0.5x, Ce_1?xSm_xO_2?0.5x, and Ce_1?xSm_0.5xNd_0.5xO_2?0.5x are studied. The ΔH_f,ox at 702 °C is determined by considering the excess heat content between 25 and 702 °C combined with the value of ΔH_f,ox at 25 °C. Both σ_i and ΔH_f,ox show maxima at x=0.15 and 0.20 for the singly and doubly doped ceria, respectively, suggesting that the number of mobile oxygen vacancies in these solid solutions reaches a maximum near those compositions. An increase in temperature results in a shift of the maximum in both ΔH_f,ox and σ_i towards higher concentrations. This shift results from a gradual increase in dissociation of the defect associates.     

Density functional theory study of the structure and energetics of negatively charged oligopyrroles

First‐principles calculations are used to investigate the electronic properties of negatively charged n‐pyrrole oligomers with n = 2–18. Chains of neutral oligomers are bent, whereas the negatively charged oligomers become almost planar due to accumulation of negative charge at the end monomers. Isomers of short oligomers (n < 6) display negative electron affinity although the corresponding anions are energetically stable. For longer oligomers with n ≥ 6, the electron affinity is small and positive, slowly increasing with oligopyrrole length. Doping of 12‐pyrrole with lithium atoms shows that negative oxidation states are possible due to electron transfer from dopant to oligomer at locations close to dopant. These 12‐pyrrole regions support extra negative charge and exhibit a local structural change from benzenoid to quinoid structure in the C? C backbone conjugation. Comparison between neutral and doped polypyrrole (PPy) indicates that doped polymers displays a substantial depletion of the band gap energy and the appearance of dopant‐based bands in the gap for a 50% per monomer doping level. It is predicted that Li‐doped PPy is not metallic. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011     

Si掺杂对TiO2空心微球微结构和光催化性能的影响

以葡萄糖、氟钛酸铵和氟硅酸铵为原料,采用一锅水热合成法在葡萄糖聚合形成的胶体碳球表面原位生成了含有Ti/Si物种的前驱物实心微球,再经高温焙烧脱除碳球模板,制得Si掺杂的TiO2空心微球.应用高分辨透射电镜、X射线衍射、X射线光电子能谱和N2吸附-脱附等手段对样品进行了表征.结果表明,Si进入到TiO2的晶格,形成的S...     

非水溶剂热法制备(001)面暴露的F/TiO2纳米晶及其光催化活性

采用非水体系溶剂热法制备了(001)面暴露的锐钛矿相F/TiO2纳米光催化剂.结果表明,F的掺杂对TiO2纳米单晶的形成影响很大.一方面,F离子作为晶面导向剂稳定(001)晶面,形成(001)面暴露的锐钛矿相TiO2;另一方面,F离子也起到稳定剂作用,抑制纳米粒子的快速生长.以光催化降解甲基橙为模型反应比较了不同F/T...