| 单晶金刚石p型和n型掺杂的研究 |
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| 引用本文： | 牛科研,张璇,崔博垚,马永健,唐文博,魏志鹏,张宝顺.单晶金刚石p型和n型掺杂的研究[J].人工晶体学报,2022,51(5):841-851. |
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| 作者姓名： | 牛科研 张璇 崔博垚 马永健 唐文博 魏志鹏 张宝顺 |
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| 作者单位： | 1.长春理工大学物理学院,高功率半导体激光国家重点实验室,长春 130022; 2.中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台, 苏州 215123 |
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| 基金项目： | 国家自然科学基金青年科学基金(61804166)； |
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| 摘 要： | 超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。
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| 关 键 词： | 金刚石 离子注入 化学气相沉积 超宽禁带半导体 掺杂 n型 p型 |
| 收稿时间： | 2021-11-03 |
p-Type and n-Type Doping of Single Crystal Diamond |
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| NIU Keyan,ZHANG Xuan,CUI Boyao,MA Yongjian,TANG Wenbo,WEI Zhipeng,ZHANG Baoshun.p-Type and n-Type Doping of Single Crystal Diamond[J].Journal of Synthetic Crystals,2022,51(5):841-851. |
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| Authors: | NIU Keyan ZHANG Xuan CUI Boyao MA Yongjian TANG Wenbo WEI Zhipeng ZHANG Baoshun |
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| Affiliation: | 1. State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun 130022, China; 2. Nanofabrication Facility, Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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| Abstract: | Diamond as an ultra-wide band gap semiconductor material shows excellent properties in thermal conductivity, carrier mobility and breakdown field strength, and has broad application prospects in the field of power electronics. The realization of p-type and n-type conduction is essential to fabricate diamond electronic devices. Between them, the development of p-type diamond is relatively mature, and boron is the mainstream doping element. However, the hole mobility decreases rapidly at a high doping concentration. The main doping element of n-type diamond is phosphorus. At present, there are still challenges such as deep impurity level, large ionization energy, and defects in diamond crystals after doping, resulting in low carrier concentration and mobility, and the resistivity is difficult to meet the requirements of devices. Therefore, the realization of high quality p-type and n-type diamond has become the focus of researchers. This paper mainly introduces the unique physical properties of single crystal diamond, outlines the basic principles and key parameters of the chemical vapor deposition method and ion implantation method of doping, then reviews the research progress on the p-type and n-type doping of single crystal diamond films by the two methods, systematically summarizes the facing problems and the prospects of future development. |
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| Keywords: | diamond ion implantation chemical vapor deposition ultra-wide band gap semiconductor doping n-type p-type |
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