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81.
The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process. These studies are concerned with the following problems: 1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates. 2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation. 相似文献
82.
Heavily n‐type doped and several nanometres thick In0.485Ga0.515P layers are necessary for various devices. We studied the delta‐doping of this ternary with tellurium; the layers were grown by metalorganic vapour phase epitaxy (MOVPE), and diethyltelluride was used as the precursor. A maximum Hall sheet concentration of 2.75 × 1013 cm–2 was achieved in our samples grown at 560 °C. The Te profiles were analyzed with secondary ion mass spectrometry (SIMS), and a very narrow spectrum with a full width at half maximum of 7.5 nm was measured. This value indicates that the memory effect, referred to in the literature, was practically eliminated with appropriate growth conditions. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
83.
DC Electrical Conductivity of the Direct Electrochemically Synthesized Polythiophene Metal Complexes
Electrochemical anodic oxidation of a metal anode in an acetone solution of 2,5-diamino-3,4-dicyanothiophene gave the polythiophene metal complexes of Co, Ni, Cu, Zn, Cd, and Sn. Chemical analyses, as well as FTIR and electronic spectral data, are presented to confirm the formulation of the isolated materials. DC electrical conductivity measurements of the polymer complexes were measured in the range 300–500 K in the annealed and 5% doped forms. The products gave electrical conductivity in the semi-conducting region that increased by heat. 相似文献
84.
85.
Tengzhou Ma Ban Xuan Dong Jonathan W. Onorato Jens Niklas Oleg Poluektov Christine K. Luscombe Shrayesh N. Patel 《Journal of polymer science. Part A, Polymer chemistry》2021,59(22):2797-2808
Molecular doping of conjugated polymers (CPs) plays a vital role in optimizing organic electronic and energy applications. For the case of organic thermoelectrics, it is commonly believed that doping CPs with a strong dopant could result in higher conductivity (σ) and thus better power factor (PF). Herein, by investigating thermoelectric performance of a polar side-chain bearing CP, poly(3-(methoxyethoxyethoxy)thiophene) (P3MEET), vapor doped with fluorinated-derivative of tetracyanoquinodimethane FnTCNQ (n = 1, 2, 4), we show that using strong dopants can in fact have detrimental effects on the thermoelectric performance of CPs. Despite possessing higher electron affinity, doping P3MEET with F4TCNQ only results in a σ (27.0 S/cm) comparable to samples doped with other two weaker dopants F2TCNQ and F1TCNQ (26.4 and 20.1 S/cm). Interestingly, F4TCNQ-doped samples display a marked reduction in the Seebeck coefficient (α) compared to F1TCNQ- and F2TCNQ-doped samples from 42 to 13 μV/K, leading to an undesirable suppression of the PF. Structural characterizations coupled with Kang-Snyder modeling of the α–σ relation show that the reduction of α in F4TCNQ-doped P3MEET samples originates from the generation of low mobility carrier within P3MEET's amorphous domain. Our results demonstrate that factors such as dopant distribution and doping efficiency within the crystalline and amorphous domains of CPs should play a crucial role in advancing rational design for organic thermoelectrics. 相似文献
86.
Dr. Naixia Lv Jie Yin Wendi Fu Jinrui Zhang Yujun Li Dr. Ding Jiang Dr. Hongping Li Prof. Wenshuai Zhu 《Chemphyschem》2021,22(2):168-177
The rational design of highly active hexagonal boron nitride (h-BN) catalysts at the atomic level is urgent for aerobic reactions. Herein, a doping impurity atom strategy is adopted to increase its catalytic activities. A series of doping systems involving O, C impurities and B, N antisites are constructed and their catalytic activities for molecular O2 have been studied by density functional theory (DFT) calculations. It is demonstrated that O2 is highly activated on ON and BN defects, and moderately activated on CB and CN defects, however, it is not stable on NB and OB defects. The subsequent application in oxidative desulfurization (ODS) reactions proves the ON and C-doped (CB, CN) systems to be good choice for sulfocompounds oxidization, especially for dibenzothiophene (DBT). While the BN antisite is not suitable for such aerobic reaction due to the extremely stable B−O*−B species formed during the oxidation process. 相似文献
87.
运用第一性原理计算方法研究了过渡族金属TM(TM=Ru、Rh、Pd)掺杂GaSb的电子结构和光学性质,结果表明:TM掺杂GaSb主要以TM替代Ga(TM @Ga)缺陷存在,并可增强GaSb半导体材料对红外光区光子的响应,使体系光学吸收谱的吸收边红移;TM@Ga所引入的杂质能级分布于零点费米能级附近,这极大地增强了体系的介电性能,促进了电子-空穴对的产生和迁移,因而提升了掺杂体系的光电转换效率;Ru 掺杂对GaSb光学性质的改善最为明显,当掺杂浓度为6.25%(原子数分数)且均匀掺杂时,Ru掺杂GaSb体系对红外光区光子的吸收幅度最大,有效提升了GaSb光电转换效率和光催化活性。 相似文献
88.
采用基于密度泛函理论的第一性原理赝势平面波方法对Sc、Ce单掺和共掺后CrSi2的几何结构、电子结构、复介电函数、吸收系数和光电导率进行了计算。结果表明:Sc、Ce掺杂CrSi2的晶格常数增大,带隙变小。本征CrSi2的带隙为0.386 eV,Sc、Ce单掺及共掺CrSi2的禁带宽度分别减小至0.245 eV、0.232 eV、0.198 eV,费米能级均向低能区移动进入价带。由于Sc的3d态电子和Ce的4f态电子的影响,Sc、Ce掺杂的CrSi2在导带下方出现了杂质能级。掺杂后的CrSi2介电函数虚部第一介电峰峰值增加且向低能方向移动,说明Sc、Ce掺杂使得CrSi2在低能区的光跃迁强度增强,Sc-Ce共掺时更明显。Sc、Ce掺杂的CrSi2吸收边在低能方向发生红移,在能量大于21.6 eV特别是在位于31.3 eV的较高能量附近,本征CrSi2几乎不吸收光子,Sc单掺和Sc-Ce共掺CrSi2吸收光子的能力有所增强,并在E=31.3 eV附近形成了第二吸收峰。说明掺杂Sc、Ce改善了CrSi2对红外和较高能区光子的吸收。在小于3.91 eV的低能区掺杂后的CrSi2光电导率增加。在20.01 eV<E<34.21 eV时,本征CrSi2光电导率为零,但Sc、Ce掺杂后的体系不为零,掺杂拓宽了CrSi2的光响应范围。研究结果为CrSi2基光电器件的应用与设计提供了理论依据。 相似文献
89.
Defect Chemistry of Singly and Doubly Doped Ceria: Correlation between Ion Transport and Energetics 下载免费PDF全文
Dr. Salih Buyukkilic Prof. Sangtae Kim Prof. Alexandra Navrotsky 《Angewandte Chemie (International ed. in English)》2014,53(36):9517-9521
Earlier studies have shown a strong correlation between the enthalpy of formation, ΔHf,ox, and the ionic conductivity, σi, near room temperature in doped ceria systems, which are promising solid electrolytes for intermediate‐temperature solid oxide fuel cells (IT‐SOFCs). The present work demonstrates that this correlation holds at the operating temperature of IT‐SOFCs, 600–700 °C. Solid solutions of Ce1?xNdxO2?0.5x, Ce1?xSmxO2?0.5x, and Ce1?xSm0.5xNd0.5xO2?0.5x are studied. The ΔHf,ox at 702 °C is determined by considering the excess heat content between 25 and 702 °C combined with the value of ΔHf,ox at 25 °C. Both σi and ΔHf,ox show maxima at x=0.15 and 0.20 for the singly and doubly doped ceria, respectively, suggesting that the number of mobile oxygen vacancies in these solid solutions reaches a maximum near those compositions. An increase in temperature results in a shift of the maximum in both ΔHf,ox and σi towards higher concentrations. This shift results from a gradual increase in dissociation of the defect associates. 相似文献
90.
Bomin Feng Xiuju Wu Ling Li Wei Gao Dr. Weihua Hu Prof. Chang Ming Li 《Chemistry (Weinheim an der Bergstrasse, Germany)》2019,25(49):11560-11565
It remains challenging to rationally synthesize iron/nitrogen-doped carbon (Fe/N-C) catalysts with rich Fe−Nx atomic active sites for improved oxygen reduction reaction (ORR) electrocatalysis. A highly efficient Fe/N-C catalyst, which has been synthesized through a spatial isolation strategy, is reported. Derived from bioinspired polydopamine (PDA)-based hybrid microsphere precursors, it is a multifunctional carrier that loads atomically dispersed Fe3+/Zn2+ ions through coordination interactions and N-rich melamine through electrostatic attraction and covalent bonding. The Zn2+ ions and melamine in the precursor efficiently isolate Fe3+ atoms upon pyrolysis to form rich Fe−Nx atomic active sites, and generate abundant micropores during high-temperature treatment; as a consequence, the resultant Fe-N/C catalyst contains rich catalytically active Fe−Nx sites and a hierarchical porous structure. The catalyst exhibits improved ORR activity that is superior to and close to that of Pt/C in alkaline and acidic solutions, respectively. 相似文献