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71.
A position-sensitive detector is designed for neutron detection. It uses a single continuous screen of a self-made lithium glass scintillator, rather than discrete crystal implementations, coupling with a multi-anode PMT (MaPMT). The scintillator is fast and efficient; with a decay time of 34 ns and thermal neutron detection efficiency of around 95.8% for the 3 mm thick screen, and its light yield is around 5670 photons per neutron and 3768 photons per MeV γ rays deposition. The spatial resolution is around 1.6 mm (FWHM) with the energy resolution around 34.7% by using α (5.2 MeV) rays test. 相似文献
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Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors 下载免费PDF全文
A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO2 nanowire electric-double-layer (EDL) field-effect transistor (FET) is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance (- 2.14 μF/cm2) directly bound up with mobile ions-induced EDL (sandwiched between the top and bottom electrodes) effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing (S = dVgs/d(logIds)) of 140 mV/decade. The threshold voltage Yth (0.1 V) is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors. 相似文献
75.
Parasitic bipolar amplification in a single event transient and its temperature dependence 下载免费PDF全文
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor. 相似文献
76.
Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor 下载免费PDF全文
Electromagnetic field distribution in the vertical metal
organic chemical vapour deposition (MOCVD) reactor is simulated by
using the finite element method (FEM). The effects of alternating
current frequency, intensity, coil turn number and the distance
between the coil turns on the distribution of the Joule heat are
analysed separately, and their relations to the value of Joule heat
are also investigated. The temperature distribution on the
susceptor is also obtained. It is observed that the results of the
simulation are in good agreement with previous measurements. 相似文献
77.
Heat and mass transfer effects on the unsteady flow of a micropolar fluid through a porous medium bounded by a semi-infinite vertical plate in a slip-flow regime are studied taking into account a homogeneous chemical reaction of the first order. A uniform magnetic field acts perpendicular to the porous surface absorb micropolar fluid with a suction velocity varying with time. The free stream velocity follows an exponentially increasing or decreasing small perturbation law. Using the approximate method, the expressions for the velocity microrotation, temperature, and concentration are obtained. Futher, the results of the skin friction coefficient, the couple stress coefficient, and the rate of heat and mass transfer at the wall are presented with various values of fluid properties and flow conditions. 相似文献
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