金属型非晶态InSb结构弛豫的霍耳效应研究

提出了利用霍耳效应测量研究非晶态材料结构弛豫的方法。第一次实验研究了金属型非晶态InSb的结构弛豫,结果表明,霍耳效应测量是研究非晶材料结构弛豫的有效方法,并能直接判断出发生结构弛豫的物理机制。     

欧姆加热共蒸Y—Ba—Cu—O薄膜的金属—非金属转变及其对超导电性的影响

利用欧姆加热三元共蒸的方法制备了 Y-Ba-Cu-O 薄膜.研究了组分、热处理温度和降温速度诱导的金属-半导体转变及其对超导电性的影响.在这些研究的基础上,第一次利用欧姆加热三元共蒸方法获得了零电阻温度超过液氮温度的 Y-Ba-Cu-O 超导薄膜.其起始超导 T_c为98K,零电阻超导 T_c 为78.6K,中点超导 T_c 为84K,△T_c 为12K.     

零电阻103.4K的单相Y1Ba2Cu3O7—δ大块超导体和可能的形成机制

在Y_1Ba_2Cu_3O_(7 8)单相大块样品中第一次观察到零电阻为103.2K的超导现象,但它是不稳定的,其T_c值逐渐降低。研究了样品的磁化和J_c(B)性质。认为Cu-O链的不完全的和不稳定的Peirls相变导致了100K以上超导现象的出现。     

外延单晶La2/3Ca1/3MnO3-δ薄膜中磁电阻的磁场依赖关系

采用直流磁控溅射法在NdGaO₃ ( 110 )衬底上制备了La_2/3Ca_1/3MnO_3-δ外延单晶薄膜 .在 0～8T的磁场范围内测量了不同温区下的磁电阻随磁场的变化关系 .结果表明 ,ρ(H )遵循以下规律 :当温度高于居里温度T_C 时 ,ρ(H ) =1α(T) + β(T)H² ;当T <Tc时,ρ(H ) =ρ0(T ) +1A(T)+B(T)exp(H/C(T));而当温度远低于居里温度时,ρ(H ) =1σ(T) + ν(T)H。表明负巨磁电阻的产生主要起因于磁场引起的电导率的增加。     

SUPERCONDUCTING TRANSITION TEMPERATURES AND NORMAL-STATE ELECTRICAL RESISTIVITIES OF Tm1-xPrxBa2Cu3O7-δ

Superconducting transition temperature T_c and normal-state electrical resistivities ρ of the Tm_1-xPr_xBa₂Cu₃O_7-δ system have been measured. The results indicate that T_c remains constant for x = 0 to 0.08 before it drops steadily with higher x. Following the Abrikosov-Gor'kov model, a total suppression of superconductivity occurs at a critical Pr concentration x_cr≈0.56. It is found for the first time, as far as we know, that the logarithmic resistivity at 270 K increases linearly with increasing x, yielding ρ= ρ₀e^ax. Judging from the relation between dρ/dT and x, a metal to insulator transition occurs just beyond x_cr.     

有机超导体κ-(BEDT-TTF)_2Cu(SCN)_2单晶的SHUBNIKOV-DE HAAS效应

测量了有机超导体κ（ＢＥＤＴＴＴＦ）２Ｃｕ（ＳＣＮ）２单晶的Ｘ射线衍射和强磁场下磁阻．样品沿垂直于传导面的晶格常数为１．４９ｎｍ．在１．２Ｋ温度，磁场垂直于传导面的位形下，在６Ｔ以上观测到磁阻振荡，即ＳｈｕｂｎｉｋｏｖｄｅＨａｓ效应．由ＦＦＴ（ＦａｓｔＦｏｕｉｅｒＴｒａｎｓｆｏｒｍａｔｉｏｎ）谱图，我们发现了对应于κ（ＢＥＤＴＴＴＦ）２Ｃｕ（ＳＣＮ）２单晶Ｆｅｒｍｉ面闭合轨道Ｆα频率和开放轨道磁突破频率Ｆβ的存在，Ｆα＝６２０±３０Ｔ，Ｆβ＝４１００±２００Ｔ．     

YBa2Cu3O7-δ外延薄膜的有效钉扎势

在0—7T磁场范围内，测量了不同测量电流密度下YBa₂Cu₃O_7-δ外延薄膜的电阻温度关系.实验结果表明，临界温度以下，混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系，有效钉扎势的温度和磁场关系遵守U∝(1-T/T_c)H^-α关系，其中α=0.63，与热激活磁通点阵位错运动模型相一致，表明样品具有2D涡旋性质. 关键词：     

Pd,Ge薄膜体系中的分形晶化行为

利用透射电子显微镜（ＴＥＭ）对有化合物生成（Ｐｄ₂Ｇｅ和ＰｄＧｅ等）的Ｐｄ，Ｇｅ薄膜体系中的分形晶化行为进行了系统研究实验结果和分析表明：在各种退火温度条件下，Ｐｄ－Ｇｅ共蒸膜都难以发生分形晶化，Ｐｄ／ａ－Ｇｅ双层膜较ａ－Ｇｅ／Ｐｄ双层膜更容易导致分形结构的产生Ｚ化合物Ｐｄ₂Ｇｅ和ＰｄＧｅ的形成对薄膜中的分形晶化有明显的抑制作用，体系中能否出现分形结构，取决于非晶Ｇｅ的成核生长和Ｐｄ，Ｇｅ化学反应两种过程的相互竟争． 关键词：     

PHOTOELECTRON SPECTROSCOPIC STUDY OF THE EFFECT OF Cs INTRALAYER ON THE BAND LINEUP OF Ge/InP(100) HETEROJUNCTION

The formation and band lineup of the Ge/InP(100) interface with or without alkali metal Cs intralayer (IL) are studied by means of X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). It is found that the Cs atoms do not react with or diffuse into the subatrate and the Ge overlayer. The thin Cs IL will induce an increase of the valence band offset (ΔE_v) for the Ge/InP(100) heterojunction. The changes of ΔE_v are proportional to the IL thickness and them saturate for IL thickness of about one half of a monolayer of Cs IL. Without the IL, ΔE_v of the Ge/InP(100) heterojunction is equal to 0.70eV, and ΔE_v with one half of monolayer IL is up to 0.90eV. These results show that the interface dipole plays a major role in the band lineup at the heterojunction interface.     

SUPERCONDUCTING TRANSITION TEMPERATURES AND NORMAL-STATE ELECTRICAL RESISTIVITIES OF Tm1-xPrxBa2Cu3O7-δ

Superconducting transition temperature T_c and normal-state electrical resistivities ρ of the Tm_1-xPr_xBa₂Cu₃O_7-δ system have been measured. The results indicate that T_c remains constant for x = 0 to 0.08 before it drops steadily with higher x. Following the Abrikosov-Gor'kov model, a total suppression of superconductivity occurs at a critical Pr concentration x_cr≈0.56. It is found for the first time, as far as we know, that the logarithmic resistivity at 270 K increases linearly with increasing x, yielding ρ= ρ₀e^ax. Judging from the relation between dρ/dT and x, a metal to insulator transition occurs just beyond x_cr.