| Pd,Ge薄膜体系中的分形晶化行为 |
| |
| 引用本文： | 张庶元,陈志文,谭舜,朱警生,李凡庆,吴自勤.Pd,Ge薄膜体系中的分形晶化行为[J].物理学报,1996,45(1):94-100. |
| |
| 作者姓名： | 张庶元 陈志文 谭舜 朱警生 李凡庆 吴自勤 |
| |
| 作者单位： | (1)中国科学技术大学基础物理中心; (2)中国科学技术大学结构分析开放研究实验室,微结构科学技术高等研究中心 |
| |
| 摘 要： | 利用透射电子显微镜（ＴＥＭ）对有化合物生成（Ｐｄ2Ｇｅ和ＰｄＧｅ等）的Ｐｄ，Ｇｅ薄膜体系中的分形晶化行为进行了系统研究实验结果和分析表明：在各种退火温度条件下，Ｐｄ－Ｇｅ共蒸膜都难以发生分形晶化，Ｐｄ／ａ－Ｇｅ双层膜较ａ－Ｇｅ／Ｐｄ双层膜更容易导致分形结构的产生Ｚ化合物Ｐｄ2Ｇｅ和ＰｄＧｅ的形成对薄膜中的分形晶化有明显的抑制作用，体系中能否出现分形结构，取决于非晶Ｇｅ的成核生长和Ｐｄ，Ｇｅ化学反应两种过程的相互竟争．
关键词：
|
| 关 键 词： | 金属／半导体 锗 薄膜 分形晶化 |
| 收稿时间： | 1994-10-07 |
BEHAVIOUR OF THE FRACTAL CRYSTALLIZATION IN Pd, Ge THIN FILM SYSTEM |
| |
| ZHANG SHU-YUAN,CHEN ZHI-WEN,TAN SHUN,ZHU JING-SHENG,LI FAN-QING and WU ZI-QIN.BEHAVIOUR OF THE FRACTAL CRYSTALLIZATION IN Pd, Ge THIN FILM SYSTEM[J].Acta Physica Sinica,1996,45(1):94-100. |
| |
| Authors: | ZHANG SHU-YUAN CHEN ZHI-WEN TAN SHUN ZHU JING-SHENG LI FAN-QING and WU ZI-QIN |
| |
| Abstract: | The behaviour of the fractal crystallization in Pd, Ge thin film system of various ratios of thickness (or composition) after annealing have been investigated by transmission electron microscopy (TEM). It was difficult for the coevaporated Pd-Ge films to realize the fractal crystallization. The production of the fractal structure in Pd/a-Ge bilayers was easier than that in a-Ge/Pd bilayers. The fractal crystallizations were restrainted because of the formation of the compounds (Pd2Ge and PdGe) in Pd, Ge bilayers. The growting of the fractal struc ture depends on the competition of the two precesses of a-Ge crystallization and compound formation. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
