球磨法制备异质结型光催化剂ZnO/Bi_4Ti_3O_(12)及催化性能

本文用水作为分散介质,掺杂一定量的ZnO于Bi_4Ti_3O_(12)中,采用高能球磨法制备了异质结型光催化剂ZnO/Bi_4Ti_3O_(12).利用UV-Vis、XRD、SEM和PL等仪器对样品进行了分析与表征.以375 W中压汞灯为光源,通过对亚甲基蓝的氧化来研究其光催化活性.结果表明,对于光氧化亚甲基蓝(MB),异质结型光催化剂ZnO/Bi_4Ti_3O_(12)光催化活性高于钛酸铋的光催化活性.当ZnO的掺杂量分别是0.0和0.5wt.%,异质结型光催化剂ZnO/Bi_4Ti_3O_(12)对亚甲基蓝光氧化率分别达到50.2和80.3 %.     

新型1,3,4-噁二唑衍生物的合成与性质研究

研制高效载流子传输材料是提高有机电致发光器件性能的关键. 采用对酯对二酰氯(5)与含不同链长烷氧取代基的苯甲酰肼(2)缩合制备了一系列腰接羧基1,3,4-噁二唑衍生物, 即1,4-二[5-(4-烷氧基苯)-1,3,4-噁二唑基]-2,5-二羧基苯(7; 烷氧基＝OCnH2n＋1; n＝8, 12, 16), 并采用UV-vis吸收和荧光光谱对合成物进行了表征. 结果表明: 7的分子结构中羧基的横向引入, 对化合物的光物理性质和能带结构产生较大影响. 这些噁二唑化合物的LUMO及HOMO值分别介于－3.62与－3.58 eV之间及－6.94与－6.90 eV之间, 说明它们可能具有良好的电子传输性.     

Theoretical Study on the Structural and Electronic Properties of Thiocarbamide Hydrochloride

In the present paper, the electronic band structure, density of states （DOS）, and projected density of states （PDOS） analysis of thiocarbamide hydrochloride are reported. Calculations of the electronic properties have been carried out on the basis of fully self-consistent pseudopotential method using DFT. The results show that near the Fermi level, more prominent densities of states are seen between -8 eV and -6 eV in the valence band mainly due to the Cl-3p, N-2p and S-3p orbitals.     

Tuning of NaTaO_3 Band Structure through Mn~（2＋） Ion Doping and the Enhanced Visible Light Response

Pure and Mn-doped NaTaO3 nanoparticles were synthesized by a simple hydro- thermal method. XRD and XPS results suggested that manganese ions were successfully doped into the NaTaO3 crystalline in Mn2＋ state. UV-vis diffuse reflectance spectra revealed the obvious red-shift in the series of manganese doped NaTaO3 nanoparticles, resulting in a decrease in the band gap of NaTaO3 with the increase of Mn2＋ doping concentration. The photo-degradation experiment indicated that manganese doped NaTaO3 showed good photocatalytic performance and methylene blue（MB） degradation is improved with lower doping concentration of manganese ions under visible light. The simulation of energy band structure by density functional theory unfolded that the substitution of Ta5＋ ions by Mn2＋ ions resulted in an intermediate band（IB） below the bottom of the conduction band（CB）, which was mainly attributed to the state of Mn 3d.     

渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计

利用一维微电子-光电子结构分析软件(AMPS-1D)在AM1.5G(100 mW/cm2)、室温条件下模拟和比较了有、无渐变带隙氢化非晶硅锗(a-SiGe:H)薄膜太阳能电池的各项性能.计算结果表明:渐变带隙结构电池具有较高的开路电压(V oc)和较好的填充因子(FF),转换效率(E ff)比非渐变带隙电池提高了0.477%.研究了氢化非晶硅(a-Si:H)、氢化非晶碳化硅(a-SiC:H)和氢化纳米晶硅(nc-Si:H)三种不同材料的窗口层对a-SiGe:H薄膜太阳能电池性能的影响.结果显示:在以nc-Si:H为窗口层的电池能带中,费米能级E F已经进入价带,使得窗口层电导率及电池开路电压有所提高,又由于ITO与p-nc-Si:H的接触势垒较低,使得接触处的电场降低,更有利于载流子的收集.另一方面,窗口层与a-SiGe:H薄膜之间存在较大的带隙差,在p/i界面由于能带补偿作用形成了价带势垒(带阶)?E v,阻碍了空穴的迁移,因此我们在p/i界面引入缓冲层,使得能带补偿作用得到释放,更有利于空穴的迁移和收集,得到优化后单结渐变带隙a-SiGe:H薄膜结构太阳能电池的转换效率达到了9.104%.     

拓扑狄拉克半金属

<正>拓扑狄拉克半金属是一种全新的奇特拓扑量子材料。这种材料的体电子形成了三维的狄拉克锥结构,所以可以看作是"三维的石墨烯"。另外,由于这种材料的电子结构具有非平庸的拓扑性质,它也有和拓扑绝缘体类似的表面态。这些独特的电子结构在最近的高分辨光电子谱实验中得到了证实。封面图中是Na3Bi,第一个被实验证实的三维拓扑狄拉克半金属的能带结构:内部的线     

硼磷掺杂小直径单壁碳纳米管的第一性原理研究简

利用基于密度泛函理论的第一性原理计算方法,研究了小直径锯齿形单壁碳纳米管(3,0)的硼(B)、磷(P)单个原子掺杂和B/P共掺杂效应.计算了B、P单原子掺杂的形成能、能带结构和电子态密度,分析得出B、P掺杂(3,0)单壁碳纳米管是可行的,并且碳纳米管的导电性没有发生明显改变.本文还计算了在不同掺杂位点,(3,0)金属性碳纳米管的形成能和能带结构,发现B/P共掺杂也是可行的,B和P趋于形成B/P对,并且B/P的掺入使(3,0)金属性碳纳米管的能带打开,由金属性变成半导体性.     

Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO

The energy band properties, density of states, and band alignment of the BexZn1-xO1-ySy alloy （Be- and S-doped wurtzite ZnO） are investigated by the first-principles method. BexZn1-xO1-ySy alloy is a direct band gap semiconductor, the valence band maximum （VBM） and the conduction band minimum （CBM） of BexZn1-xO1-ySy are dominated by S 3p and Zn 4s states, respectively. The band gap and lattice constant of BexZn1-xO1-ySy alloy can be modulated by changing the doped content values x and y. With the increase in Be content value x in the BexZnl-xOl-ySy alloy, the band gap increases and the lattice constant reduces, but the situation is just the opposite when increasing the S content value y in the BexZn1-xO1-ySy alloy. Because the lattice constant of Be0.375Zn0.625O0.75S0.25 alloy is well matched with that of ZnO and its energy gap is large compared with that of ZnO, so the Be0.375Zn0.625O0.75S0.25 alloy is suitable for serving as the blocking material for a high-quality ZnO-based device.     

Intersubband transitions in InxAl（l-x）N/InyGa（l-y）N quantum well operating at 1.55 μm

In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl（l-x）N/InyGa（l-y）N single quantum well by solving the Schrodinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions （E2 -El）, （E3 -El）, and （E3 -E2） are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV （1.55 μm） is carried out. Finally, the dependence of the optical absorption α13（ω） on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.     

双轴应变调控二维单层C2X2TM（X = O, H; TM=Fe, Cr） 的多铁性研究

基于密度泛函理论的第一性原理计算,系统地研究了过渡金属原子插层的单层氧化/氢化石墨烯的磁学性质和铁电性质.在考虑了电子在位库仑作用和自旋轨道耦合作用下,得到了过渡金属Fe、Cr插层形成的C₂X₂TM二维单层膜的稳定结构以及基态磁性结构,研究了不同应变作用下C₂X₂TM的磁性、能带、铁电极化以及电子结构的变化.结果发现,对于任何应变下的C₂X₂TM其基态磁性都为手性逆时针反铁磁结构.在无应变时体系存在一个较大的离子翻转势垒,通过外加双轴应变,可有效调控体系的势垒高度和能隙,发现25%应变下C₂O₂Cr和30%应变时C₂O₂Fe单层薄膜具有与GeS等二维铁电材料相近的铁电极化和翻转势垒,这些研究结果表明C₂O₂Fe(Cr)单层薄膜是一种新型二维多铁性材料.