拓扑狄拉克半金属

<正>拓扑狄拉克半金属是一种全新的奇特拓扑量子材料。这种材料的体电子形成了三维的狄拉克锥结构,所以可以看作是"三维的石墨烯"。另外,由于这种材料的电子结构具有非平庸的拓扑性质,它也有和拓扑绝缘体类似的表面态。这些独特的电子结构在最近的高分辨光电子谱实验中得到了证实。封面图中是Na3Bi,第一个被实验证实的三维拓扑狄拉克半金属的能带结构:内部的线     

ZnO/p-Si异质结的深能级及其对发光的影响

利用深能级瞬态谱(DLTS)和光致发光谱(PL),研究了ZnO/pSi异质结的两种不同温度(850℃,1000℃)退火下的深能级中心。发现850℃退火的样品存在3个明显的深中心,分别为E₁=E_v+0.21eV,E₂=E_v+0.44eV,E₃=E_v+071eV;而1000℃退火样品仅存在一个E₁=E_v+021eV的中心,且其隙态密度要比850℃退火的大。同时,测量了两个样品的PL谱。发现1000℃退火可消除一些影响发光强度的深能级,对改善晶格结构,提高样品的发光强度有利。     

基于脉冲电压STM的单原子识别预研究装置

建立起一套工作于真空环境下的基于脉冲电压扫描隧道显微镜(STM)的单原子识别预研究装置.该装王主要由脉冲发生器、真空系统和STM系统三部分组成,能够在5×10-5Pa的真空环境下进行快脉冲STM实验.利用此装置,进行了单个快脉冲诱导的石墨表面超大周期结构的脉冲实验以及脉冲偏压不破坏STM针尖和样品表面的阈值实验.     

Electronic structure and spatial inhomogeneity of iron-based superconductor FeS

Iron-based superconductor family FeX(X=S,Se,Te)has been one of the research foci in physics and material science due to their record-breaking superconducting temperature(FeSe film)and rich physical phenomena.Recently,FeS,the least studied Fe X compound(due to the difficulty in synthesizing high quality macroscopic crystals)attracted much attention because of its puzzling superconducting pairing symmetry.In this work,combining scanning tunneling microscopy and angle resolved photoemission spectroscopy(ARPES)with sub-micron spatial resolution,we investigate the intrinsic electronic structures of superconducting FeS from individual single crystalline domains.Unlike FeTe or FeSe,FeS remains identical tetragonal structure from room temperature down to 5 K,and the band structures observed can be well reproduced by our ab-initio calculations.Remarkably,mixed with the 1×1 tetragonal metallic phase,we also observe the coexistence of √5×√5 reconstructed insulating phase in the crystal,which not only helps explain the unusual properties of FeS,but also demonstrates the importance of using spatially resolved experimental tools in the study of this compound.     

Quantum Oscillations in Noncentrosymmetric Weyl Semimetal SmAlSi

As a new type of quantum state of matter hosting low energy relativistic quasiparticles, Weyl semimetals(WSMs)have attracted significant attention for scientific community and potential quantum device applications. In this study, we present a comprehensive investigation of the structural, magnetic, and transport properties of noncentrosymmetric RAl Si(R = Sm, Ce), which have been predicted to be new magnetic WSM candidates. Both samples exhibit nonsaturated magnetoresistance, with about 900% and...     

Measurement of electronic structure in van der Waals ferromagnet Fe5-xGeTe2

As a van der Waals ferromagnet with high Curie temperature, Fe_5-xGeTe₂ has attracted tremendous interests recently. Here, using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically investigated the electronic structure of Fe_5-xGeTe₂ crystals and its temperature evolution. Our ARPES measurement reveals two types of band structures from two different terminations with slight k_z evolution. Interestingly, across the ferromagnetic transition, we observed the merging of two split bands above the Curie temperature, suggesting the band splitting due to the exchange interaction within the itinerant Stoner model. Our results provide important insights into the electronic and magnetic properties of Fe_5-xGeTe₂ and the understanding of magnetism in a two-dimensional ferromagnetic system.     

Electronic structure and spin–orbit coupling in ternary transition metal chalcogenides Cu2TlX2 (X = Se,Te)

Ternary transition metal chalcogenides provide a rich platform to search and study intriguing electronic properties. Using angle-resolved photoemission spectroscopy and ab initio calculation, we investigate the electronic structure of Cu$_{2}$Tl$X_{2}$ ($X=\text{Se, Te}$), ternary transition metal chalcogenides with quasi-two-dimensional crystal structure. The band dispersions near the Fermi level are mainly contributed by the Te/Se p orbitals. According to our ab-initio calculation, the electronic structure changes from a semiconductor with indirect band gap in Cu$_{2}$TlSe$_{2}$ to a semimetal in Cu$_{2}$TlTe$_{2}$, suggesting a band-gap tunability with the composition of Se and Te. By comparing ARPES experimental data with the calculated results, we identify strong modulation of the band structure by spin-orbit coupling in the compounds. Our results provide a ternary platform to study and engineer the electronic properties of transition metal chalcogenides related to large spin-orbit coupling.     

Surface Structure and Reconstructions of HgTe(111) Surfaces

Hg Te(111) surface is comprehensively studied by scanning tunneling microscopy/spectroscopy(STS).In addition to th√e prim√itive(1 × 1)√ hexagonal lattice,six reconstructed surface structures are observed:(2 × 2),2 × 1,4 × 1,3 ×(1/2)3,2(1/2)2 × 2 and (1/2)11 × 2.The(2 × 2) reconstructed lattice maintains the primitive hexagonal symmetry,whi√le the lattices of the other five reconstructions are rectangular.Moreover,the topographic features of the3 ×(1/2)3 reconstruction are bias dependent,indicating that they have both topographic and electronic origins.The STSs obtained at different reconstructed surfaces show a universal dip feature with size ～100 mV,which may be attributed to the surface distortion.Our results reveal the atomic structure and complex reconstructions of the cleaved Hg Te(111) surfaces,which paves the way to understand the rich properties of Hg Te crystal.     

Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS

Dirac semimetals are materials in which the conduction and the valence bands have robust crossing points protected by topology or symmetry. Recently, a new type of Dirac semimetals, so called the Dirac line-node semimetals(DLNSs), have attracted a lot of attention, as they host robust Dirac points along the one-dimensional(1D) lines in the Brillouin zone(BZ).In this work, using angle-resolved photoemission spectroscopy(ARPES) and first-principles calculations, we systematically investigated the electronic structures of non-symmorphic ZrSiS crystal where we clearly distinguished the surface states from the bulk states. The photon-energy-dependent measurements further prove the existence of Dirac line node along the X-R direction. Remarkably, by in situ surface potassium doping, we clearly observed the different evolutions of the bulk and surface electronic states while proving the robustness of the Dirac line node. Our studies not only reveal the complete electronic structures of ZrSiS, but also demonstrate the method manipulating the electronic structure of the compound.