Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N quantum well operating at 1.55 μm

In this paper, we theoretically study the effects of doping concentration NDand an external electric field on the intersubband transitions in InxAl(1-x)N/InyGa(1-y)N single quantum well by solving the Schr¨odinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions(E2- E1),(E3- E1), and(E3- E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration NDexists for which the transition 0.8 eV(1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.     

Intersubband Transitions of Si δ-Doped GaAs Layer for Different Donor Distribution Models

For different donor distribution types we theoretically investigate the intersubband transitions of single Si δ-doped GaAs structure as dependent on the applied electric field. The diffusion of donor impurities is taken into account in two different models: a triangular distribution and a non-uniform distribution. The electronic properties such as the effective δ-potential, the subband energies and the eigen-envelope wavefunctions have been calculated by solving the Schroedinger and Poisson equations self-consistently. Abrupt changes of the subband energy difference and the absorption peak are realized whenever the applied electric field reaches a certain value. These critical electric field values change dependent on the donor distribution model. The intersubband absorption spectrum shows that redshifts appear up to the critical electric field value for the (1-2) and (1-3) intersubband transitions. This spectrum also shows that blueshifts can occur when the electric fields are higher than certain values. These changing intersubband absorption peaks can be used in various infrared optical device applications.     

Spatially nonlocal effects on optical absorption properties in coupled quantum wells with an applied electric field

Based on the microscopic nonlocal optical response theory, the intersubband optical absorption properties in AlGa As/Ga As couple quantum wells（CQWs） are investigated for p-polarized states. The numerical results show that spatial nonlocality of optical responses can induce a radiation shift on optical absorption spectra due to nonlocal effects. The dependence of the radiation shift on the CQW structure and the applied electric field is clarified. It is also demonstrated that the maximal radiation shift and the least optical absorbance can be obtained by adopting an appropriate CQW structure and a suitable applied electric field. This work may provide some methods of designing the nanomaterials with controllable nonlocality and observing the spatial nonlocal effects in experiment.     

Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells

In the framework of effective mass approximation,we theoretically investigate the electronic structure of the Si S-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schr(o|¨)dinger-Poisson self-consistently.The linear,nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness.The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness.In addition,it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration.The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.     

Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots

The presence of a strong, changing, randomly-oriented, local electric field, which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots （QDs）, makes it difficult to observe the quantum-confined Stark effect in ensemble of colloidal QDs. We propose a way to inhibit such a random electric field, and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs. Besides the applications in optical switches and modulators, our experimental results indicate how the oscillator strengths of the optical transitions axe changed under external electric fields.     

Enhancement of Second- and Third-Order Nonlinear Optical Susceptibilities in Magnetized Semiconductors

Using electromagnetic treatment, an expression of effective nonlinear optical susceptibility χe [= χe^（2） ＋ χe^（3） E] is obtained for Ⅲ-Ⅴ semiconducting crystals in an applied transverse dc magnetic fieM under off-resonant transition regime. The origin of nonlinear interaction lies in nonlinear polarization arising from the crystal properties such as piezoelectricity and electrostriction. Numerical estimates have been made by a representative n-InSb crystal at 77K duly irradiated by a pulsed 10.6-μm CO2 laser under off-resonant transition regime. Efforts are dedicated to optimizing doping level and externally applied dc magnetic field to achieve maximum χe^（2） and χ3^（3）. The results are found to be in good agreement with the available literature. The analysis shows that χe^（2） and χe^（3） can be significantly enhanced in doped Ⅲ-Ⅴ semiconductors by the proper selection of doping concentration and dc magnetic field, which confirms its potential as a candidate material for the fabrication of nonlinear optical devices.     

Estimation of biophysical properties of cell exposed to electric field

Excitable media,such as cells,can be polarized and magnetized in the presence of an external electromagnetic field.In fact,distinct geometric deformation can be induced by the external electromagnetic field,and also the capacitance of the membrane of cell can be changed to pump the field energy.Furthermore,the distribution of ion concentration inside and outside the cell can also be greatly adjusted.Based on the theory of bio-electromagnetism,the distribution of field energy and intracellular and extracellular ion concentrations in a single shell cell can be estimated in the case with or without external electric field.Also,the dependence of shape of cell on the applied electronic field is calculated.From the viewpoint of physics,the involvement of external electric field will change the gradient distribution of field energy blocked by the membrane.And the intracellular and extracellular ion concentration show a certain difference in generating timevarying membrane potential in the presence of electric field.When a constant electric field is applied to the cell,distinct geometric deformation is induced,and the cell triggers a transition from prolate to spherical and then to oblate ellipsoid shape.It is found that the critical frequency in the applied electric field for triggering the distinct transition from prolate to oblate ellipsoid shape obtains smaller value when larger dielectric constant of the cell membrane and intracellular medium,and smaller conductivity for the intracellular medium are used.Furthermore,the effect of cell deformation is estimated by analyzing the capacitance per unit area,the density of field energy,and the change of ion concentration on one side of cell membrane.The intensity of external applied electric field is further increased to detect the change of ion concentration.And the biophysical effect in the cell is discussed.So the deformation effect of cells in electric field should be considered when regulating and preventing harm to normal neural activities occurs in a nervous system.     

Quantum-Confined Stark Effects in a Single GaN Quantum Dot

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.     

Influence of Width of Left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells

Influence of width of left well in AlxGa1-xN/GaN double quantum wells （DQWs） on absorption eoefficients and wavelengths of the intersubband transitions （ISBTs） is investigated by solving the Sehroedinger and Poisson equations self-consistently. When the width of left well is 1.79 nm, three-energy-level DQWs are realized. The ISBT between the first odd and second odd order subbands （the lodd-2odd ISBT） has a comparable absorption eoefficient with the lodd-2even ISBT. Their wavelengths are located at 1.3 and 1.55 μm, respectively. When the width of left well is 1.48nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-eolour optoeleetronie devices operating within the optical communication wavelength range.     

Electronic structure and optical properties of In-doped SrTiO3 by density function theory

The effect of In doping on the electronic structure and optical properties of SrTiO3 is investigated by the first-principles calculation of plane wave ultra-soft pseudo-potential based on the density function theory （DFT）. The calculated results reveal that due to the hole doping, the Fermi level shifts into valence bands （VBs） for SrTi1-x InxO3 with x = 0.125 and the system exhibits p-type degenerate semiconductor features. It is suggested according to the density of states （DOS） of SrTi0.875In0.125O3 that the band structure of p-type SrTIO3 can be described by a rigid band model. At the same time, the DOS shifts towards high energies and the optical band gap is broadened. The wide band gap, small transition probability and weak absorption due to the low partial density of states （PDOS） of impurity in the Fermi level result in the optical transparency of the film. The optical transmittance of In doped SrTiO3 is higher than 85% in a visible region, and the transmittance improves greatly. And the cut-off wavelength shifts into a blue-light region with the increase of In doping concentration.     

Tunable edge bands and optical properties in black phosphorus nanoribbons under electric field

For several types of the applied electric field configuration on the normal-zigzag black phosphorus nanoribbon(nZZ-BPNR)we investigate the band structure and the linear optical absorption spectrum,especially for the edge states and the corresponding low-energy absorption peaks.The obtained results show that the applied electric field can not only open another band gap at k=0.5 point,but also can change completely the spacial probabilities of edge states in the two edge bands.The strength of electric field can tune the two band gaps at the Γ point and 0.5 point.Further,one remarkable feature is that the forbidden transitionallowed.The lowest-excited-energy linear absorption peakfrom the transition between two edge bands at the Γ point.Finally,in comparison with the lowest-excited-energy peaks among various configurations,the second type of electric field configuration can move this peak blue-shift larger than other configurations.     

Simultaneous Effects of External Electric Field and Conduction Band Nonparabolicity on Optical Properties of a GaAs Quantum Dot Embedded at the Center of a GaAlAs Nano-Wire

An investigation of the optical properties of a GaAs spherical quantum dot which is located at the center of a Ga1-xAlx As cylindrical nano-wire has been performed in the presence of an external electric field. The band nonparabolieity effect is also considered using the energy dependent effective mass approximation. The energy eigenvalues and corresponding wave functions are calculated by finite difference approximation and the reliability of calculated wave functions is checked by computing orthogonality. Using computed energy eigenvalues and wave functions, the linear, third-order nonlinear and total optical absorption coefficients and refractive index changes are examined in detail. It is found that （i） Presence of electric field causes both blue and red shifts in absorption spectrum; （ii） The absorption coefficients shift toward lower energies by taking into account the conduction band nonparabolicity; （iii） For large values of electric field the effect of conduction band nonparabolieity is less dominant and parabolic band is estimated correctly; （iv） In the presence of electric field and conduction band nonparabolicity the nonlinear term of absorption coefficient rapidly increases by increasing incident optical intensity. In other words, the saturation in optical spectrum occurs at lower incident optical intensities.     

Molecular dynamics simulations on the wet/dry self-latching and electric fields triggered wet/dry transitions between nanosheets: A non-volatile memory nanostructure

We design a nanostructure composing of two nanoscale graphene sheets parallelly immersed in water.Using molecular dynamics simulations,we demonstrate that the wet/dry state between the graphene sheets can be self-latched;moreover,the wet→dry/dry→wet transition takes place when applying an external electric field perpendicular/parallel to the graphene sheets(E;/E;).This structure works like a flash memory device(a non-volatile memory):the stored information(wet and dry states)of the system can be kept spontaneously,and can also be rewritten by external electric fields.On the one hand,when the distance between the two nanosheets is close to a certain distance,the free energy barriers for the transitions dry→wet and wet→dry can be quite large.As a result,the wet and dry states are self-latched.On the other hand,an E;and an E;will respectively increase and decrease the free energy of the water located in-between the two nanosheets.Consequently,the wet→dry and dry→wet transitions are observed.Our results may be useful for designing novel information memory devices.     

Terahertz field-induced modulations of intersubband absorptions in quantum wells

Nonlinear optical properties of intersubband electrons in a 3-level quantum well under intense terahertz field are investigated by using a density matrix approach. The results show that the terahertz fields with different frequencies cause the distinct modulations of the intersubband absorptions. The terahertz-induced sideband and Autler--Towns splitting in the absorption spectrum are obtained, respectively for the terahertz-photon energy below and close to the transition energy between the ground and first excited state.     

Enhanced absorption process in the thin active region of GaAs based p–i–n structure

The optical absorption is the most important macroscopic process to characterize the microscopic optical transition in the semiconductor materials. Recently, great enhancement has been observed in the absorption of the active region within a p–n junction. In this paper, Ga As based p–i–n samples with the active region varied from 100 nm to 3 μm were fabricated and it was observed that the external quantum efficiencies are higher than the typical results, indicating a new mechanism beyond the established theories. We proposed a theoretical model about the abnormal optical absorption process in the active region within a strong electric field, which might provide new theories for the design of the solar cells,photodetectors, and other photoelectric devices.     

Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields

The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.     

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Considering the strong built-in electric field （BEF） effects due to the spontaneous and piezoelectric polarizations, the intersubband optical absorptions and refractive index changes for an InxGa1-xN/AlyGa1-yN strained single quantum well are studied theoretically within the framework of the density matrix method and effective-mass approximation. The linear, third-order nonlinear and total absorption coefficients and refractive index changes are calculated as a function of the incident optical intensity and photon energy. Our results show that both the incident optical intensity and the strong BEF have great influence on the total absorptions and refractive index cllanges. The results are significant for designing some important photodetectors and the photonic crystal devices with adjustable photonic band structures.     

Release of charges under external fields of PbLa（Zr,Sn,Ti）03 ceramic＊

This paper investigates the pyroelectric of poled antiferroelectric （AFE） ceramic Pbo.97Lao.02 （Zro.69Sno.196 Ti0.114）03 and its remnant polarization dependence of hydrostatic pressure. The results show that the bound charges of poled sample can be released in short time by temperature field or pressure field. The released charge abruptly forms a large pulse current. The phenomena of released charge under external fields result in the ferroelectric-AFE phase transition induced by temperature or hydrostatic pressure.     

Steady-state linear optical properties and Kerr nonlinear optical response of a four-level quantum dot with phonon-assisted transition

The linear optical properties and Kerr nonlinear optical response in a four-level loop configuration Ga As/Al Ga As semiconductor quantum dot are analytically studied with the phonon-assisted transition(PAT). It is shown that the changes among a single electromagnetically induced transparency(EIT) window, a double EIT window and the amplification of the probe field in the absorption curves can be controlled by varying the strength of PAT κ. Meanwhile, double switching from the anomalous dispersion regime to the normal dispersion regime can likely be achieved by increasing the Rabi energy of the external optical control field. Furthermore, we demonstrate that the group velocity of the probe field can be practically regulated by varying the PAT and the intensity of the optical control field. In the nonlinear case, it is shown that the large SPM and XPM can be achieved as linear absorption vanishes simultaneously, and the PAT can suppress both third-order self-Kerr and the cross-Kerr nonlinear effect of the QD. Our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength, and may provide some new possibilities for technological applications.     

Effects of polarization on intersubband transitions of Al_xGa_(1-x)N/GaN multi-quantum wells

The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multiquantum wells (MQWs) have been investigated by solving the Schrdinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.