基于Copula函数的华南台风极端灾害的重现期研究

利用1981-2014年华南地区的台风灾害数据,通过计算致灾因子的重现期来预测台风极端灾害频率,评估台风极端灾害的受灾程度.选取最大风速极值(X)和中心气压极值(Y)为研究变量,经过K-S检验选取最优的对数正态分布、正态分布分别作为X、Y的边缘分布,再通过Frank Copula函数构造联合分布,计算单变量重现期、联合重现期及同现重现期,并求出变量X与Y的设计值.计算结果发现,重现期不超过两年时,联合重现期的设计值要优于单变量重现期和同现重现期的设计值"重现期超过两年时,同现重现期的设计值要优于单变量重现期和联合重现期的设计值.最后以2015年至2017年台风中的X与Y作为输入,其重现期作为输出进行检验,结果与设计的组合重现期对比最优.研究结果表明,重现期小于等于两年时,选取联合重现期的设计值作为防灾标准"重现期大于两年时,选取同现重现期的设计值作为防灾标准,且致灾因子的重现期越长,台风极端灾害就越严重.     

降温速率对DAST单晶生长的影响

使用籽晶法通过调整降温速率生长出高质量4-N,N-二甲胺基-4′-N′-甲基-氮杂芪对甲苯磺酸盐(DAST)晶体,研究了降温速率对DAST晶体结晶质量、光学特性及太赫兹输出特性的影响。通过核磁共振分析表征了合成原料的结构和纯度。使用X射线衍射仪对生长晶体的(001)面进行X射线摇摆曲线测试,测试结果表明在降温速率为0.1 ℃/d条件下获得的晶体质量最佳,其摇摆曲线半高宽(FWHM)为57.6″。此条件下生长的晶体在780~1 576 nm波长范围内光透过率达65%。使用差频法从DAST晶体中产生了0.1~20 THz范围内的宽频可调谐太赫兹波,在18.8 THz处得到太赫兹波最大输出能量为0.477 μJ/脉冲,对应的能量转换效率达5.31×10^-5。     

n型掺杂层结构对n-i-p型微晶硅电池性能和光致衰退特性的影响

采用射频化学气相沉积法,制备了一系列具有不同晶化率n型掺杂层的n-i-p结构微晶硅薄膜太阳电池.发现本征层的结构很大程度上依赖于n型掺杂层的结构,特别是n/i界面处的孵化层厚度以及本征层的晶化率.该系列太阳电池在100 mW/cm²的白光下照射400 h,实验结果证实了本征层晶化率最大（X_c(i)=65%）的电池性能表现出最低的光致衰退率.拥有非晶/微晶过渡区n型掺杂层的电池（本征层晶化率X_c(i)=54%）分别 关键词： 微晶硅 n-i-p结构太阳电池 光致衰退 晶化率     

优良抽样设计下Logistic分布中参数的极大似然估计

当研究目标的实际测量具有不可修复的破坏性或耗资巨大时,有效的抽样设计将是一项重要的研究课题.在统计推断方面,排序集抽样(RSS)被视为一种比简单随机抽样(SRS)更为有效的收集数据的方式.动态极值RSS (MERSS)是一种修正的RSS.文章在SRS和MERSS下研究了Logistic分布中参数的极大似然估计(MLEs).在这两种抽样下证明了该分布中位置参数和刻度参数的MLEs的存在性和唯一性,并计算了所含参数的Fisher信息量和Fisher信息矩阵.比较了这两种抽样下对应估计的渐近效率.数值结果表明MERSS下的MLEs一致优于SRS下的MLEs.     

4-氨基-1,8-萘二酰亚胺的结构及光谱性质的理论研究

采用HF和密度泛函理论中的B3LYP和PBE0方法,在7个不同的基组下优化得到了4-氨基-1,8-萘二酰亚胺(ANI)的基态几何构型,用CIS/6-31+G(d)方法得到第一激发态几何构型,频率分析无虚频.在此基础上运用HF-CIS,TD-B3LYP和TD-PBE0方法研究了在气相及DMSO,DMF,MeCN,THF,CHCl3和EtOH溶剂中ANI的前线轨道及电子光谱.结果表明,HOMO→LUMO的跃迁是π→π*跃迁.随溶剂极性的增加,其最大吸收和荧光波长红移.用TD-B3LYP/6-31+G(d)方法得到的溶剂中ANI的吸收光谱计算值与实验值吻合性较好,但荧光光谱计算值与实验值有较大差异.进一步经线性拟合校正,ANI在非质子溶剂中的计算值与实验值能较好地吻合.计算显示激发态ANI具有较大的偶极矩,与解释相关荧光分子探针的光诱导电子转移方向选择性现象的光生电场理论一致.     

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

Thermal Behaviour for InGaAsP／InP Multi-Quantum-Well Superluminescent Diodes

Using a two-dimensional thermal flow model, we calculate the thermal resistance and the temperature distribution of InGaAsP/InP multi-quantum-well superluminescent diodes. The influence of lateral chip size and composition are evaluated. The results reveal that when the injection power reaches 1 W, temperatures in the active region rises up to almost 5OK. The width and length of the chip also have strong influence on the thermal resistance that can reach two orders of magnitude. The thermal resistance will change from 290 K/W to 68 K/W when the chip width increases from 500μm to 2500μm, and a similar result exists for the length. There is small effect on thermal resistance for active width. In view of the characteristics of output power versus the input current under pulsed and continues currents, the fitted experimental thermal resistance matches well with the measured results.     

光催化反应器性能参数及其简便测试方法

本文分析了光催化反应器降解有机挥发化合物(VOCs)的特性,提出了反应器总降解常数的概念,提出了一种测量光催化反应器性能参数-传质单元数、反应有效度和总降解常数的方法。管状光催化反应器降解空气中微量甲醛的实验验证了该方法的可行性。实验表明:在空气温度22-24℃,空气湿度40％附近,甲醛的光催化反应在不同浓度区间近似为一次反应,在1.6-12.4 mg/m3浓度区间内其总降解常数最大。     

Synthesis,Crystal Structure and Catalytic Properties of a New 2D Nickel(II) Coordination Polymer Based on Flexible Bis(benzimidazole)

A new Ni(II) coordination polymer [Ni(L)2(SCN)2]n(L = 1,4-bis(benzimidazol-1-yl)butane) was synthesized hydrothermally and characterized by elemental analysis, IR spectroscopy and single-crystal X-ray diffraction. The title compound crystallizes in the monoclinic system, space group C2/c with a = 9.4760(3), b = 24.0408(8), c = 16.5871(5) A, β = 99.832(3)°, V = 3723.2(2) A3, Z = 4, Dc = 1.348 g/cm3, F(000) = 1576, the final R = 0.0486 and w R = 0.0936 for 2938 observed reflections with I 2σ(I) for the complex. Structural analysis shows that the coordination polymer possesses a 2D(4,4) layer structure which is composed of Ni(II) centers bridged by L ligand with two kinds of conformations and further assembled into a 3D supramolecular network via π-π stacking interactions. In addition, the fluorescence and catalytic properties, for the degradation of Congo red, of the complex were investigated.     

Quadripartite entangled state from cascaded second-harmonic generation

A generation system of continuous-variable （CV） quadripartite entangled state based on two cascaded second- harmonic generation （SHG） cavities below the threshold is investigated. Two reflected fundamental bearias of the first cavity, the reflected second-harmonic beam and the output fourth-harmonic beam of the second cavity are proved to be entangled, and the dependence of the entanglement degree on the normalized frequency, pump parameter, fourth-harmonic loss parameter, and second-harmonic loss parameter is also analyzed. Due to the fact that the cavity parameters and the nonlinear crystals of the two SHG cavities can be freely chosen, the practicality of the proposed protocol is relatively perfect and the system can also be extended to the preparation of multicolor entangled states for a quantum network.