碘量紫外分光光度法测定碳氢燃料过氧化值

建立测定碳氢燃料过氧化值的碘量紫外分光光度法。样品溶于乙醇中，加入0.50 mL冰乙酸，用饱和碘化钾-乙醇溶液定容至10 mL，避光显色90 min，过氧化物在酸性条件下与碘化钾反应生成黄色的I₃^-，在360 nm处测定吸光度，计算过氧化氢的含量。过氧化氢的质量浓度在0.106 1～1.061μg/mL范围内与吸光度线性关系良好，相关系数为0.999 8，方法检出限为0.015μg/mL。样品加标回收率为97.3%～103.6%，测定结果的相对标准偏差小于5%(n=6)。该法适用于测定碳氢燃料的过氧化值。     

SCALING LAW FOR CBr4-C2Cl6 LAMELLAR EUTECTIC IN DIRECTIONAL SOLIDIFICATION

A coupling equation of directional solidification of CBr₄(α)-C₂Cl₆(β) eutectic is solved numerically. Profiles and profile bifurcation of the solidifying interface as functions of the interlamellar spacing are studied in detail. It is believed that the critical bifurcating point of the solidifying interface of each lamella coincides with its marginally stable position and hence, a new scaling law is derived. Existence of the band of spacing selection is also studied. For a given solidifying rate, the critical bifurcating point of β/liquid interface is the upper limit of this band, and its lower limit corresponds to the critical bifurcating point of α/liquid interface. Our analyses interpret the latest relevant experimental data reasonably.     

脉冲激光淀积Ba_（1－x）K_xBiO_3薄膜

我们用熔融法制备了Ｂａ１－ｘＫｘＢｉＯ３氧化物超导体，其超导转变温度２８．５Ｋ，零电阻温度２５．２Ｋ．以此为靶，用脉冲激光淀积技术，制备了Ｂａ１－ｘＫｘＢｉＯ３超导薄膜，Ｔｃ（ｏｎｓｅｔ）＝２４．５Ｋ，Ｔｃ（Ｒ＝０）＝２０．８Ｋ．     

非晶态Cu_(125)Ni_(10)Zr_(41)Ti_(14)Be_(22.5)合金相分离的动力学标度

利用实时小角中子散射实验研究了非晶态Ｃｕ１２５Ｎｉ１０Ｚｒ４１Ｔｉ１４Ｂｅ２２５合金相分离的动力学标度性质．通过对相分离过程中实时小角中子散射谱进行详细的标度分析，揭示出散射函数Ｓ（ｑ，ｔ）（ｑ为散射波矢，ｔ为时间）在相分离的早期即达到动力学标度态，从而证明动力学标度假设也适用于描述深过冷液态的相分离过程     

Carlitz反演与Rogers-Ramanujan恒等式及五重积恒等式

应用Carlitz反演及Heine定理,建立了基本超几何级数的一个新的变换式。由此变换式出发,可以得到包含Rogcrs-Ramanujan恒等式,五重积恒等式在内的若干分拆恒等式。     

The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.     

Sin/Si-n(n=2-6)的结构和电子亲合能的密度泛函理论研究

选用四种不同的密度泛函理论方法(B3LYP,BLYP,BP86,B3P86),在全电子的双ζ加极化加弥散函数基组(DZP++)下,研究Sin/Si-n (n=2 -6 )体系的结构和电子亲合能.预测Si2 /Si-2 ,Si3 /Si-3 ,Si4 /Si-4 ,Si5 /Si-5 和Si6 /Si-6 的基态结构分别为C∞h(3Σ-g ) /C∞h(2Σ+g ),D3h(3A′2 ) /C2υ(2A1 ),D2h(1Ag) /D2h(2B2g),D3h(1A′1 ) /D3h(2A″2 )和C2υ(1A1 ) /D4h(2A2u).在电子亲合能方面,B3LYP方法预测的电子亲合能是最可靠的.预测Si2,Si3,Si4,Si5和Si6的电子亲合能分别为 2. 05, 2. 34, 2. 16, 2. 48和 2. 13eV.