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The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer
Authors:LU  ian-Xin  OU Xin  LAN Xue-Xin  CAO Zheng-Yi  LIU Xiao-Jie  LU Wei  GONG Chang-Jie  XU Bo  LI Ai-Dong  XIA Yi-Dong  YIN  iang  LIU Zhi-Guo
Institution:[1]National Laboratory of Solid State Microstructures, and Department of Physics, Nanjing University, Nanjing 210093 [2]National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093
Abstract:
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