广义凸函数的特征性质

提出广义凸集、广义凸函数、中间点广义凸函数、端点广义凸函数四个定义,通过定义条件P1,研究条件P1所蕴含的等式关系,进而得到一个基础性定理一稠密性定理和一个相对条件较弱的推论,最后将结果应用于若干不同类型的广义凸函数类,尤其是s-凸函数、几何凸函数、rp-凸函数,得到它们所共有的一个特征性质,即满足稠密性定理．     

Symmetry role on the preedge X—ray absorption fine structure at the metal K edge

The preedge features in a system with “even”symmetry,apart from quadrupolar transition contribution,are mainly dipolar in character,associated with the existence of unoccupied states made up of mixed cation-4p with higher-neighboring cation-3d orbitals,and reflect the density of states due to the medium-range order of the system.In “odd“symmetry materials these preedge features ate the result of a transition from the ls to a final density of states of p symmetry due to an unsymmetrical mixing of the ligand wave functions with the central cation 3d orbitals,similar to atetrahedral configuration.These results are validated for Fe as a photoabsorber by comparing XAS spectra of Fe2SiO4(fayalite) to ab initio full multiple scattering calculations at the fe K edge,but pertain to all systems containing sixfold-coordinated cations.     

Banach代数L∞(T;X)

讨论向量值函数的Banach代数L∞（T；X）的极大理想空间的拓扑性质和代数性质，得到了若干结果；给出了Banach空间H∞（D；X）中闭单位球的端点的一条性质．     

Orlicz函数空间单位球端点的一个重要特征

无论赋Ｌｕｘｅｍｂｕｒｇ范数或赋Ｏｒｌｉｃｚ范数，Ｏｒｌｉｃｚ函数空间单位球上的点为端点的充要条件是，于此点处Ｅ_Ｎ弱收敛蕴涵测度收敛．     

P叶近于凸函数类的一个扩展

给出了P叶近于凸函数类的一个扩展.得到包含关系,结合算子理论导出类中函数的积分表达式,端点性质,推出偏差定理,证明积分平均不等式.     

Lebesgue-Bochner函数空间Lp(μ,X)中的drop性质

主要给出了如下结论:设(Ω,Σ,μ)为有限测度空间,1相似文献   

广义相对论的珍宝

 从前人们的生活很简单,科学不发达,要跟上物理发展的步伐并不难。今天要做到这一点,对我们大多数人来说,把全部精力和时间都投进去也是不够的。总之,我抓住这条理由,来辩解为什么没有对广义相对论在它从一种鉴赏品发展到一门硬科学的过程中给予关注。     

近江牡蛎受精细胞学研究

用醋酸──地衣红染色的方法对近江牡蛎人工授精的卵子减数分裂和受精过程进行了详细的细胞学观察．精子入卵前，卵子处于第一次减数分裂的前期（胚泡期），精子入卵后，胚泡消失，然后进行两次减数分裂，在海水温度为２８．８℃的情况下，授精后３３ｍｉｎ和４５ｍｉｎ，绝大部分受精卵已排出第一极体和第二极体，雄原核可在第一极体排出后及第二极体排出前任何时期内形成，雌雄原核以联合的方式将两组染色体合并，授精后１ｈ，大部分卵子完成第一次卵裂．在２５℃和２６℃授精的情况下，观察到了较多的多精入卵的现象．卵子发育的非同步性现象非常明显．     

Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy

The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.