Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

Superconductivity and spin fluctuations

In the conventional superconductors, the Cooper pairs are mediated by phonons, which is a process where only the correlations between the phonons and the charge properties of the electrons are needed. However, superconductivity can also be derived from other types of elementary excitations. The spin fluctuations are arguably the most promising candidate that can mediate such unconventional superconductivity. In some of the important systems such as cuprates, Fe-based superconductors and heavy-fermion superconductors, spin fluctuations play a key role in the mechanism of their superconductivity although there are still many debates. In this paper, we will give a brief review on the correlation between the spin fluctuations and superconductivity.     

纳米结构电学性质的静电力显微镜研究方法

纳米尺度的材料具有许多不同于宏观体材料的奇特的物理和化学特性.了解纳米结构的物性随材料尺寸及形状的变化关系,对于设计和合成具有特定功能的纳米材料有重要的指导意义.静电力显微镜技术为研究微纳米尺度下材料的电学特性提供了强有力的工具.文章介绍了这种测量技术的基本原理,并列举了几种在静电力显微镜基础上发展起来的纳米材料电学性...     

对一道经典高考题的挖掘

高考题是命题专家精雕细琢的结晶,对其进行深入挖掘,往往能加强学生对基础知识和基本方法的理解,拓展学生的想象力,提高学生思维的灵活性和实效性,从而有效地提高学生的能力而避免陷入"题海"战术.本文对一道2003年高考江苏卷试题     

六取代三环喹唑啉电荷传输性质的理论研究

六取代三环喹唑啉分子可以作为液晶半导体材料。使用电子传输的半经典模型和密度泛函理论方法在B3LYP/6-31G**水平上对六取代三环喹唑啉分子的电荷传输性质进行理论研究。结果显示,该分子的正电荷传输速率为负电荷传输速率的30倍。与苯并菲和六氮杂苯并菲比较,该分子更有利于正电荷传输。     

有限长带电导体直线的电荷分布

通过3种方式给出有限长带电导体直线的电荷密度分布,结果表明电荷分布并不均匀.     

Pr0．45（Ca1-xSrx）0．55MnO3体系调带宽引起的磁相变及电输运性质转变

采用固相法制备了Pr0．45（Ca1-xSrx）0．55MnO3（x=0．0,0．2,0．4,0．6,0．8,1．0）多晶样品．通过测量样品的X射线衍射（XRD）谱、磁化强度-温度（M～T）曲线、电阻率-温度（ρ～T）曲线,研究了Sr^2＋替代Ca^2＋对Pr0．45Ca0．55MnO3体系磁性和电性的影响．实验发现：...     

理论计算中电势能零点的选取对电荷注入的影响

基于紧束缚的Su-Schrieffer-Heeger(SSH)模型,利用非绝热的动力学方法,研究了金属/聚合物结构中电势能零点的选取对电荷注入的影响.理论计算发现,电场越强,电势能零点的选取对电荷注入的影响就越大. 关键词： 电势能 电荷注入 非绝热动力学     

线电荷与接地半无限大导体板所形成的电场

将镜像法和保角变换法相结合,计算由线电荷与接地半无限大导体板所形成的电场,给出其电势分布和场强分布,进一步得出等势线方程和电场线方程,并利用数学软件MATLAB绘制出等势线图和电场线图.