纳米结构电学性质的静电力显微镜研究方法

纳米尺度的材料具有许多不同于宏观体材料的奇特的物理和化学特性.了解纳米结构的物性随材料尺寸及形状的变化关系,对于设计和合成具有特定功能的纳米材料有重要的指导意义.静电力显微镜技术为研究微纳米尺度下材料的电学特性提供了强有力的工具.文章介绍了这种测量技术的基本原理,并列举了几种在静电力显微镜基础上发展起来的纳米材料电学性...     

Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate

Monolayer MnTe₂ stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromagnetic metal and can be tuned via strain engineering. There is no naturally van der Waals (vdW) layered MnTe₂ bulk, leaving mechanical exfoliation impossible to prepare monolayer MnTe₂. Herein, by means of molecular beam epitaxy (MBE), we successfully prepared monolayer hexagonal MnTe₂ on Si(111) under Te rich condition. Sharp reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) patterns suggest the monolayer is atomically flat without surface reconstruction. The valence state of Mn⁴⁺ and the atom ratio of ([Te]:[Mn]) further confirm the MnTe₂ compound. Scanning tunneling spectroscopy (STS) shows the hexagonal MnTe₂ monolayer is a semiconductor with a large bandgap of ~2.78 eV. The valence-band maximum (VBM) locates at the Γ point, as illustrated by angle-resolved photoemission spectroscopy (ARPES), below which three hole-type bands with parabolic dispersion can be identified. The successful synthesis of monolayer MnTe₂ film provides a new platform to investigate the 2D magnetism.