Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.     

单分子力谱研究活细胞上多药耐药相关蛋白1的表达

采用原子力显微镜的单分子力谱(SMFM)技术研究了多药耐药相关蛋白1(MRP1)与其抗体间的相互作用, 并考察了人舌癌细胞系TCA8113经高剂量平阳霉素(BLM)反复间歇诱导前后细胞表面MRP1的表达差异. 实验结果表明, MRP1与其抗体之间存在特异性相互作用力, 当针尖运动速率为2.5 μm/s时, 作用力大小约为(182±35) pN; 而且药物诱导后MRP1在人舌癌细胞上的表达明显增强. 本工作为了解活细胞水平上MRP1的表达提供了新方法, 有助于肿瘤细胞多药耐药性(MDR)的研究.     

液电冲击波在液固介质中的传播观测*

冲击波是一种高速瞬态的强烈非线性波动现象,在流体力学和材料力学、国防军工等领域有重要的学术意义和应用价值。冲击波在液体和固体介质中的清晰观测比较困难,但这种研究又不可或缺。该文采用高压电火花放电技术在水中产生厘米级的球形空泡,空泡膨胀后接着收缩崩塌,在极短时间和极小空间内释放出的能量在水中产生冲击波。结合纹影法和动态光弹法,使用高速摄像机和脉冲激光器组成的纹影-动态光弹法冲击波观测系统,可实现冲击波在液固介质中传播过程的高分辨率观测,为进一步研究冲击波的相关理论和应用技术提供了一种实验手段。     

《物理与工程》“新工科建设”栏目征稿

正2017年6月16日,教育部办公厅发布了《教育部办公厅关于推荐新工科研究与实践项目的通知》(教高厅函[2017]33号)。新兴产业和新经济的发展在呼唤"新工科",新工科要求我们培养出有很好理工科基础的复合型、综合性创新人才。显然,新工科学科体系是必须要强调物理学内涵的。那么面对"新工科",我们的物理教育教学该如何应对呢?在新工科学科课程建设中,作为重要基础课程——大学物理及大学物理实验课,其课程体系该如     

Photoelectric Property Improvement of 1.0-eV GaInNAs and Applications in Lattice-Matched Five-Junction Solar Cells

GaInNAs with bandgap 1.0 eV is a promising material for multi-junction solar cell applications. However, the poor quality of GaInNAs grown by metalorganic chemical vapor deposition hinders its device performance. Here to reap the benefits of 1.0-eV sub-cell, we focus on the optimization of annealing temperature and growth ambient of GaInNAs. The GaInNAs sub-cell exhibits a concentration reduction of shallow level defects when it is annealed at 700℃ for 20 min. As compared with the growth case using a hydrogen ambient, the N incorporation efficiency of GaInNAs can be enhanced during the growth in an N_2 ambient. Furthermore, background carbon concentration is observed to reduce in the as-grown GaInNAs epilayer. A GaInNAs sub-cell with 82% peak external quantum efficiency is obtained in a dual-junction GaInNAs/Ge solar cell. Finally, a monolithic Al Ga In P/Al Ga In As/Ga In As/GaInNAs/Ge five-junction solar cell is grown for space application. The fabricated device shows a conversion efficiency of 31.09% and a short-circuit current density of 11.81 m A/cm~2 under 1 sun AM 0 illumination.     

板壳结构中的非线性兰姆波

鉴于常规超声检测技术对分布式材料细微损伤和接触类结构损伤的检测效果不佳,近年来非线性超声技术逐渐引起广泛关注.超声波在板壳结构中通常以兰姆波的形式进行传播,然而由于兰姆波的频散及多模特性,使得非线性兰姆波的理论和实验研究进展缓慢.本文从经典非线性理论出发,总结了源于材料固有非线性诱发的非线性兰姆波的理论和实验两个方面的研究进展,井综述了兰姆波的二次谐波发生效应在材料损伤评价方面的若干应用;从接触声非线性理论出发,讨论了目前由于接触类结构损伤诱发的非线性兰姆波的研究现状.最后展望了非线性兰姆波的未来研究重点及发展趋势.     

中高能重离子诱发乳胶核反应慢粒子产生(英文)

对150 AMeV 4He,290 AMeV 12C,400 AMeV 12C,400 AMeV 20Ne及500 AMeV 56Fe诱发乳胶不同靶核反应靶核碎片多重数分布及关联进行了研究。结果表明,黑径迹粒子、灰径迹粒子及重电离粒子平均多重数随靶核大小的增加而增加,不同靶核碎片多重数之间存在线性关联。这些实验结果均可以依据核-核碰撞几何模型及级联蒸发模型来解释。     

超导与规范对称性,希格斯机制与希格斯粒子——电磁学与电动力学中的超导Ⅱ

本文是文献[1]和[2]联合的后继文章,在文中我们依据电磁学和电动力学中的麦克斯韦方程组建立了有质量光子导致导体中的超导现象这一事实的规范不变描写,文献[1]的结果是目前理论选取洛伦兹规范的特殊情形.我们发现在这种规范不变的理论中存在一个零质量的标量场,它可以和规范势的纵向分量相互转化.这正是文献[2]所介绍的2013年诺贝尔物理学奖中著名的希格斯机制,即规范粒子吃掉Goldstone玻色子而产生纵向分量,因而获得质量.这个新引进的零质量标量场对应量子场论中激发Goldstone玻色子的标量场,它可以被看成是一个更一般的两分量复标量场的相角分量.而此推广的复标量场的常数模分量可以被看成是另一个动力学场——希格斯场的真空期望值.希格斯场的激发是希格斯粒子,即所谓上帝的粒子;而光子的质量则起源于希格斯场的真空期望值.     

系留旋翼平台建模与控制技术研究

文章提出了一种系留旋翼平台,首先介绍了系留旋翼平台与普通旋翼飞行器之间在结构和控制方式的异同点,其次针对系留旋翼平台进行动力学分析并建立其动力学模型,然后依据所建立模型采用PID控制方法对姿态、偏航以及位置进行控制,最后对系统进行了Simulink仿真,仿真结果证明系统采用模型和控制器,控制效果良好,对实际设计具有指导作用。